PMD16K80
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PMD16K80
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 220
W
Tensión colector-base (Vcb): 80
V
Tensión colector-emisor (Vce): 80
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 20
A
Temperatura operativa máxima (Tj): 200
°C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 10000
Paquete / Cubierta:
TO3
Búsqueda de reemplazo de transistor bipolar PMD16K80
PMD16K80
Datasheet (PDF)
8.1. Size:117K inchange semiconductor
pmd16k60 80 100.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors PMD16K60/80/100 DESCRIPTION With TO-3 package High DC current gain DARLINGTON APPLICATIONS Designed for use in power switching application. PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=25) SYM
9.1. Size:200K inchange semiconductor
pmd1601k.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor PMD1601K DESCRIPTION High DC current gain Collector-Emitter Breakdown Voltage- V(BR)CEO= 60V(Min) Complement to type PMD1701K APPLICATIONSDesigned for general purpose amplifier and low frequency switching applications ABSOLUTE MAXIMUM RATINGS(TC=25) SYMBOL PARAMETER VA
9.2. Size:200K inchange semiconductor
pmd1602k.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor PMD1602K DESCRIPTION High DC current gain Collector-Emitter Breakdown Voltage- V(BR)CEO= 80V(Min) Complement to type PMD1702K APPLICATIONSDesigned for general purpose amplifier and low frequency switching applications ABSOLUTE MAXIMUM RATINGS(TC=25) SYMBOL PARAMETER VA
9.3. Size:200K inchange semiconductor
pmd1603k.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor PMD1603K DESCRIPTION High DC current gain Collector-Emitter Breakdown Voltage- V(BR)CEO= 100V(Min) Complement to type PMD1703K APPLICATIONSDesigned for general purpose amplifier and low frequency switching applications ABSOLUTE MAXIMUM RATINGS(TC=25) SYMBOL PARAMETER V
Otros transistores... 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
, 2N3207
, B772
, 2N3209
, 2N3209AQF
, 2N3209CSM
, 2N3209DCSM
, 2N3209L
, 2N321
, 2N3210
, 2N3211
.