2N51 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Order this documentMOTOROLAby 2N5191/DSEMICONDUCTOR TECHNICAL DATA2N51912N5192*Silicon NPN Power Transistors*Motorola Preferred Device. . . for use in power amplifier and switching circuits, excellent safe area limits.Complement to PNP 2N5194, 2N5195.4 AMPEREPOWER TRANSISTORS

Order this documentMOTOROLAby 2N5194/DSEMICONDUCTOR TECHNICAL DATA2N51942N5195*Silicon PNP Power Transistors*Motorola Preferred Device. . . for use in power amplifier and switching circuits, excellent safe area limits.Complement to NPN 2N5191, 2N51924 AMPEREPOWER TRANSISTORS

2N5153HRHi-Rel PNP bipolar transistor 80 V, 5 ADatasheet - production dataFeatures132Parameter ValueTO-257 VCEO 80 VTO-39 IC (max.) 5 A2hFE at 10 V -150 mA > 7013Operating temperature -65 C to +200 CrangeSMD.5 Hi-Rel PNP bipolar transistor Linear gain characteristicsFigure 1. Internal schematic diagram ESCC qualified European preferr

2N51912N5192NPN power transistorsFeatures NPN transistorsApplications Linear and switching industrial equipmentDescription12The devices are manufactured in Planar 3technology with Base Island layout. The SOT-32resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. The PNP type of 2N5192 is 2N5195.Figure

2N5154HRHi-Rel NPN bipolar transistor 80 V - 5 ADatasheet - production dataFeaturesBVCEO 80 V13 IC (max) 5 A2HFE at 10 V - 150 mA > 70TO-39TO-257Operating temperature range - 65 C to + 200 C213 Hi-Rel NPN bipolar transistor Linear gain characteristicsSMD.5 ESCC qualified European preferred part list - EPPLFigure 1. Internal schematic diagr

2N5195Low voltage PNP power transistorFeatures Low saturation voltage PNP transistorApplication Audio, power linear and switching equipment12Description3SOT-32The device is manufactured in planar technology with base island layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. The Figure 1.

2N5172B TO-92CENPN General Purpose AmplifierThis device is designed for use as general purpose amplifiersand switches requiring collector currents to 300 mA. Sourcedfrom Process 10. See PN100 for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 25 VVCBO Collector-Base Voltage 25 VVEBO Em

2N5196/5197/5198/5199Vishay SiliconixMonolithic N-Channel JFET DualsPRODUCT SUMMARYPart Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IG Max (pA) jVGS1 VGS2j Max (mV)2N5196 0.7 to 4 50 1 15 52N5197 0.7 to 4 50 1 15 52N5198 0.7 to 4 50 1 15 102N5199 0.7 to 4 50 1 15 15FEATURES BENEFITS APPLICATIONSD Monolithic Design D T

TMCentralSemiconductor Corp.145 Adams AvenueHauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824www.centralsemi.com

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

2N5109www.centralsemi.comSILICONDESCRIPTION:NPN RF TRANSISTORThe CENTRAL SEMICONDUCTOR 2N5109 is a Silicon NPN Epitaxial Planar RF Transistor mounted in a hermetically sealed package designed for high frequency amplifier applications.MARKING: FULL PART NUMBERTO-39 CASEMAXIMUM RATINGS: (TA=25C unless otherwise noted) SYMBOL UNITSCollector-Base Voltage VCBO 40 VColle

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

2N5190, 2N5191, 2N5192Silicon NPN PowerTransistorsSilicon NPN power transistors are for use in power amplifier andswitching circuits, excellent safe area limits. Complement to PNP2N5194, 2N5195.http://onsemi.comFeatures ESD Ratings: Machine Model, C; > 400 V 4.0 AMPERESHuman Body Model, 3B; > 8000 VNPN SILICON Epoxy Meets UL 94 V-0 @ 0.125 in.POWER TRANSISTORS

2N5190, 2N5191, 2N5192Silicon NPN PowerTransistorsSilicon NPN power transistors are for use in power amplifier andswitching circuits, excellent safe area limits. Complement to PNP2N5194, 2N5195.http://onsemi.comFeatures ESD Ratings: Machine Model, C; > 400 V 4.0 AMPERESHuman Body Model, 3B; > 8000 VNPN SILICON Epoxy Meets UL 94 V-0 @ 0.125 in.POWER TRANSISTORS

2N5190G, 2N5191G,2N5192GSilicon NPN PowerTransistorsSilicon NPN power transistors are for use in power amplifier andswitching circuits - excellent safe area limits. Complement to PNPhttp://onsemi.com2N5194, 2N5195.4.0 AMPERESFeaturesNPN SILICON Epoxy Meets UL 94 V-0 @ 0.125 in.POWER TRANSISTORS These Devices are Pb-Free and are RoHS Compliant*40, 60, 80 VOLTS -

2N5190, 2N5191, 2N5192Silicon NPN PowerTransistorsSilicon NPN power transistors are for use in power amplifier andswitching circuits, excellent safe area limits. Complement to PNP2N5194, 2N5195.http://onsemi.comFeatures ESD Ratings: Machine Model, C; > 400 V 4.0 AMPERESHuman Body Model, 3B; > 8000 VNPN SILICON Epoxy Meets UL 94 V-0 @ 0.125 in.POWER TRANSISTORS

2N5190, 2N5191, 2N5192Silicon NPN PowerTransistorsSilicon NPN power transistors are for use in power amplifier andswitching circuits, excellent safe area limits. Complement to PNP2N5194, 2N5195.http://onsemi.comFeatures ESD Ratings: Machine Model, C; > 400 V 4.0 AMPERESHuman Body Model, 3B; > 8000 VNPN SILICON Epoxy Meets UL 94 V-0 @ 0.125 in.POWER TRANSISTORS

2N5194G, 2N5195GSilicon PNP PowerTransistorsThese devices are designed for use in power amplifier and switchingcircuits; excellent safe area limits.Featureshttp://onsemi.com Complement to NPN 2N5191, 2N51924 AMPERE These Devices are Pb-Free and are RoHS Compliant*POWER TRANSISTORSMAXIMUM RATINGS (Note 1)PNP SILICONRating Symbol Value Unit60 - 80 VOLTSCollecto

2N5194, 2N5195Preferred DevicesSilicon PNP PowerTransistorsThese devices are designed for use in power amplifier and switchingcircuits; excellent safe area limits. Complement to NPN 2N5191,2N5192.http://onsemi.comFeatures Pb-Free Packages are Available* 4 AMPEREPOWER TRANSISTORSMAXIMUM RATINGS (Note 1)PNP SILICON

2N5194, 2N5195Preferred DevicesSilicon PNP PowerTransistorsThese devices are designed for use in power amplifier and switchingcircuits; excellent safe area limits. Complement to NPN 2N5191,2N5192.http://onsemi.comFeatures Pb-Free Packages are Available* 4 AMPEREPOWER TRANSISTORSMAXIMUM RATINGS (Note 1)PNP SILICON

2N5194, 2N5195Preferred DevicesSilicon PNP PowerTransistorsThese devices are designed for use in power amplifier and switchingcircuits; excellent safe area limits. Complement to NPN 2N5191,2N5192.http://onsemi.comFeatures Pb-Free Packages are Available* 4 AMPEREPOWER TRANSISTORSMAXIMUM RATINGS (Note 1)PNP SILICON

The documentation and process conversion measures necessary to comply with this document INCH-POUND shall be completed by 13 February 2014. MIL-PRF-19500/371H 13 December 2013 SUPERSEDING MIL-PRF-19500/371G 28 January 2009 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH POWER, TYPES 2N3902, 2N3902T1, 2N3902T3, 2N5157, 2N5157T1, AND

The documentation and process conversion measures necessary to comply with this document INCH-POUND shall be completed by 13 February 2014. MIL-PRF-19500/371H 13 December 2013 SUPERSEDING MIL-PRF-19500/371G 28 January 2009 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH POWER, TYPES 2N3902, 2N3902T1, 2N3902T3, 2N5157, 2N5157T1, AND

2N5148Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar NPN Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 80V dia.IC = 2A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1 3

SILICON EPITAXIAL NPN TRANSISTOR 2N5154N2A Hermetic Ceramic Surface Mount SMD1 Package High Reliability and Space Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VCBO Collector Base Voltage (IE = 0) 100V VCEO Collector Emitter Voltage (IB = 0) 80V VEBO Emitter Base Voltage 5.5V IC Continuous Collector Curren

2N5152SMD052N5154SMD05MECHANICAL DATANPN BIPOLAR TRANSISTOR IN ADimensions in mm (inches)CERAMIC SURFACE MOUNTPACKAGE FOR HIGH-REL ANDSPACE APPLICATIONS DESCRIPTION !The 2N5152SMD05 and the 2N5154SMD05 aresilicon expitaxial planar NPN transistors in aCeramic S

2N5153SMDDimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed 0.89(0.035)min.Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142)3.41 (0.134) 3.41 (0.134) Max.Package for High Reliability Applications 1 3Bipolar PNP Device. 2VCEO = 80V IC = 5A 9.67 (0.381)All Semelab hermetically sealed products 9.38 (0.369)0.50 (0.020)0.26 (0

2N51512N5153MECHANICAL DATAHIGH SPEED Dimensions in mm (inches)8.89 (0.35)9.40 (0.37) MEDIUM VOLTAGE 7.75 (0.305)8.51 (0.335)SWITCHES4.19 (0.165)4.95 (0.195)DESCRIPTION0.89max.(0.035)12.70The 2N5151 and the 2N5153 are silicon(0.500)7.75 (0.305)min.8.51 (0.335)expitaxial planar PNP transistors india.jedec TO-39 metal case intended foruse in switc

SILICON NPN POWER TRANSISTOR 2N5154X-220M Hermetic TO220 Isolated Metal Package Ideally suited for Driver Circuits, Switching and Amplifier Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VCBO Collector Base Voltage (IE = 0) 100V VCEO Collector Emitter Voltage (IB = 0) 80V VEBO Emitter Base

2N5152ADimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar NPN Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 80V dia.IC = 5A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1 3

SILICON EPITAXIAL NPN TRANSISTOR 2N5154T2A Hermetic Metal TO39 Package High Reliability and Space Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VCBO Collector Base Voltage (IE = 0) 100V VCEO Collector Emitter Voltage (IB = 0) 80V VEBO Emitter Base Voltage 5.5V IC Continuous Collector Current 2A ICM Pea

2N5154XXMECHANICAL DATADimensions in mm (inches)8.51 (0.34)9.40 (0.37)7.75 (0.305)8.51 (0.335)HIGH SPEED 6.10 (0.240)6.60 (0.260)MEDIUM VOLTAGESWITCH0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)dia.5.08 (0.200)typ.2.542(0.100)1 3DESCRIPTION0.74 (0.029)1.14 (0.045)0.71 (0.028)0.86 (0.034) The 2N5154XX is a silicon expitaxial

2N5150Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar NPN Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 80V dia.IC = 2A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1 3

2N5154XDimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar NPN Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 80V dia.IC = 5A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1 3

2N51522N5154MECHANICAL DATADimensions in mm (inches)HIGH SPEED MEDIUM VOLTAGE SWITCHES DESCRIPTION ! The 2N5152 and the 2N5154 are silicon expitaxial planar NPN transistors in jedec

2N5154XSMD05MECHANICAL DATADimensions in mm (inches)HIGH SPEED 7.54 (0.296)0.76 (0.030)MEDIUM VOLTAGEmin.3.175 (0.125) 2.41 (0.095) 2.41 (0.095) Max.SWITCH 0.127 (0.005)1 32DESCRIPTION 0.127 (0.005)The 2N5154XSMD05 is a silicon expitaxial16 PLCS 0.127 (0.005) 0.50(0.020)0.50 (0.020)planar NPN transistors in a Ceramic Surfacemax.7.26 (0.286) Mount

2N5154XSMDMECHANICAL DATADimensions in mm (inches) HIGH SPEED MEDIUM VOLTAGE SWITCH DESCRIPTIONThe 2N5154XSMD is a silicon expitaxialplanar NPN transistors in a Ceramic SurfaceMount Package for use in Switching and Linear applications.

2N5152SMDDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89(0.035)min.Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142)3.41 (0.134) 3.41 (0.134) Max.Package for High Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 80V IC = 5A 9.67 (0.381)All Semelab hermetically sealed products 9.38 (0.369)0.50 (0.020)0.26 (0

MECHANICAL DATAPNP BIPOLAR TRANSISTOR IN ADimensions in mm (inches)CERAMIC SURFACE MOUNT7.54 (0.296)PACKAGE FOR HIGH-REL AND0.76 (0.030)min.3.175 (0.125)SPACE APPLICATIONS 2.41 (0.095) 2.41 (0.095) Max. 0.127 (0.005)1 3DESCRIPTION2The 2N5151XSMD05 is a silicon expitaxialplanar PNP transistor in a Ceramic SurfaceMount Package for use in Switching and 0.127 (

2N5151SMD052N5153SMD05MECHANICAL DATAPNP BIPOLAR TRANSISTOR IN ADimensions in mm (inches)CERAMIC SURFACE MOUNTPACKAGE FOR HIGH-REL ANDSPACE APPLICATIONS DESCRIPTION !The 2N5151SMD05 and the 2N5153SMD05 aresilicon expitaxial planar PNP transistors in aCeramic S

2N5151SMD052N5153SMD05MECHANICAL DATAPNP BIPOLAR TRANSISTOR IN ADimensions in mm (inches)CERAMIC SURFACE MOUNTPACKAGE FOR HIGH-REL ANDSPACE APPLICATIONS DESCRIPTION !The 2N5151SMD05 and the 2N5153SMD05 aresilicon expitaxial planar PNP transistors in aCeramic S

SILICON EPITAXIAL NPN TRANSISTOR 2N5154N1B Hermetic Ceramic Surface Mount SMD0.5 Package High Reliability and Space Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VCBO Collector Base Voltage (IE = 0) 100V VCEO Collector Emitter Voltage (IB = 0) 80V VEBO Emitter Base Voltage 5.5V IC Continuous Collector Curr

2N5151-220M2N5153-220MMECHANICAL DATADimensions in mm (inches)4.70HIGH SPEED 5.0010.410.7010.67MEDIUM VOLTAGE 0.90SWITCHES3.56Dia.3.81DESCRIPTION1 2 3The 2N5151-220M and the 2N5153-220M aresilicon expitaxial planar PNP transistors inTO-220 (JEDEC TO-257AB) metal caseintended for use in switching applications.The complementary NPN types are the0.89 2

2N5152SMD052N5154SMD05MECHANICAL DATANPN BIPOLAR TRANSISTOR IN ADimensions in mm (inches)CERAMIC SURFACE MOUNTPACKAGE FOR HIGH-REL ANDSPACE APPLICATIONS DESCRIPTION !The 2N5152SMD05 and the 2N5154SMD05 aresilicon expitaxial planar NPN transistors in aCeramic S

2N5172 0.5 A, 25 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-92 General Purpose Amplifier TransistorG H EmitterCollector Base JA DCollector Millimeter REF.Min. Max.BA 4.40 4.70B 4.30 4.70K C 12.70 -D 3.30 3.81 E 0.3

2N5108NPN SILICON HIGH FREQUENCY TRANSISTORDESCRIPTION:The 2N5108 is a Designed forGeneral Purpose Class C AmplifierApplications Up to 1 GHz.PACKAGE STYLE TO-39FEATURES: GPE = 6.0 dB Typ. at 1.0 GHz FT = 1,500 MHz Typ. at 15 V/ 50 mA Hermetic TO-39 PackageMAXIMUM RATINGSIC 400 mAVCB55 VVCE30 VPDISS3.5 W @ TC = 25 OCTJ-65 to +200 OC1 = Emitter 2

IS / IECQC 700000IS/ISO 9002IS / IECQC 750100Lic# QSC/L- 000019.2Continental Device India LimitedAn IS/ISO 9002 and IECQ Certified ManufacturerNPN SILICON PLANAR TRANSISTOR 2N5179TO-72Boca Semiconductor Corp BSCLow Noise Tuned Amplifiers.ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITCollector -Base Voltage VCBO 20 VCollector -Emitter Voltage VCEO 12 VEmitte

P-Channel JFET SwitchCORPORATION2N5114 2N5116GENERAL DESCRIPTION ABSOLUTE MAXIMUM RATINGS(T = 25oC unless otherwise noted)AIdeal for inverting switching or "Virtual Gnd" switching intoinverting input of Op. Amp. No driver is required and 10VAC Gate-Drain or Gate-Source Voltage . . . . . . . . . . . . . . . . . 30Vsignals can be handled using only +5V logic (TTL or CMOS). G

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN EPITAXIAL SILICON POWER TRANSISTORS 2N51912N5192TO126 Plastic PackageECBUse in Medium Power Linear and Switching ApplicationsABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL 2N5191 2N5192 UNITCollector -Base Voltage VCBO 60 80 VCollector -Emitter Voltage VCEO 60 80 VEmitter Base Vo

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR EPITAXIAL TRANSISTOR 2N5172TO-92Plastic PackageBCEABSOLUTE MAXIMUM RATINGS(Ta=25C unless specified otherwise)DESCRIPTION SYMBOL VALUE UNITSVCEOCollector Emitter Voltage 25 VVCBOCollector Base Voltage 25 VVEBOEmitter Base Voltage 5 VICCollector Current C

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5190 2N5191 2N5192 DESCRIPTION With TO-126 package Complement to type 2N5193,2N5194,2N5195 Excellent safe operating area APPLICATIONS For use in medium power linear and switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5157 DESCRIPTION With TO-3 package High breakdown voltage APPLICATIONS Switching regulator Inverters Solenoid and relay drivers Motor controls PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-3) and symbol MAXIMUN RATINGS(Ta=25) SYMBOL PA

Product Specification www.jmnic.com Silicon PNP Power Transistors 2N5193 2N5194 2N5195 DESCRIPTION With TO-126 package Complement to type 2N5190,2N5191,2N5192 Excellent safe operating area APPLICATIONS For use in medium power linear and switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/544 DEVICES LEVELS JAN 2N5152 2N5154JANTX 2N5152L 2N5154LJANTXV 2N5152U3 2N5154U3JANS ABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Parameters / Test

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com PNP POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/545 DEVICES LEVELS JAN 2N5151 2N5153JANTX 2N5151L 2N5153LJANTXV 2N5151U3 2N5153U3JANS ABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Parameters / Te

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com P-CHANNEL J-FET Equivalent To MIL-PRF-19500/476 DEVICES LEVELS 2N5114 MQ = JAN Equivalent 2N5115 MX = JANTX Equivalent 2N5116 MV = JANTXV EquivalentABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Parameters / Test C

2N5114UB thru 2N5116UB Screening in reference to Available on P-CHANNEL J-FET MIL-PRF-19500 commercial versions available DESCRIPTION This low-profile surface mount device is available in military equivalents for high-reliability applications. Microsemi also offers numerous other products to meet higher and lower power voltage regulation applications. Important: For t

2N5114 thru 2N5116 Screening in reference to Available on P-CHANNEL J-FET MIL-PRF-19500 commercial versions available DESCRIPTION This leaded device is available in high-reliability equivalents for high-reliability applications. Microsemi also offers numerous other products to meet higher and lower power voltage regulation applications. Important: For the latest infor

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/544 DEVICES LEVELS JAN 2N5152 2N5154JANTX 2N5152L 2N5154LJANTXV 2N5152U3 2N5154U3JANS ABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Parameters / Test

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com PNP POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/545 DEVICES LEVELS JAN 2N5151 2N5153JANTX 2N5151L 2N5153LJANTXV 2N5151U3 2N5153U3JANS ABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Parameters / Te

Data Sheet No. 2N5109Generic Part Number:Type 2N51092N5109Geometry 1007Polarity NPNREF: MIL-PRF-19500/453Qual Level: JAN - JANTXVFeatures: VHF-UHF amplifier silicon transis-tor. Housed in TO-39 case. Also available in chip form usingthe 1007 chip geometry. The Min and Max limits shown areper MIL-PRF-19500/398 whichTO-39Semicoa meets in all cases.M

PNP Power Silicon Transistor2N5151, 2N5151L & 2N5153, 2N5153LFeatures Available in commercial, JAN, JANTX, JANTXV, JANSand JANSR 100K rads (Si) per MIL-PRF-19500/545 TO-5 Package: 2N5151L, 2N5153LTO-39 (TO-205AD) Package: 2N5151, 2N5153Maximum Ratings (TC = +25C unless otherwise noted)Ratings Symbol Value UnitsCollector - Emitter Voltage VCEO 80 VdcCollector - Base V

NPN Power Silicon Transistor2N5152, 2N5152L & 2N5154, 2N5154LFeatures Available in commercial, JAN, JANTX, JANTXV, JANSand JANSR 100K rads (Si) per MIL-PRF-19500/544 TO-5 Package: 2N5152L, 2N5154LTO-39 (TO-205AD) Package: 2N5152, 2N5154Maximum Ratings (TC = +25C unless otherwise noted)Ratings Symbol Value UnitsCollector - Emitter Voltage VCEO 80 VdcCollector - Base V

NPN High Power Silicon Transistors2N3902 & 2N5157Features Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/371 TO-3 (TO-204AA) PackageMaximum RatingsRatings Symbol 2N3902 2N5157 UnitsCollector - Emitter Voltage VCEO 400 500 VdcEmitter - Base Voltage VEBO5.0 6.0 VdcCollector - Base Voltage VCBO 7.0 VdcBase Current IB 2.0 AdcCollector Current IC 3.5 AdcTotal

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5190 2N5191 2N5192 DESCRIPTION With TO-126 package Complement to type 2N5193/5194/5195 Excellent safe operating area APPLICATIONS For use in medium power linear and switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute max

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5157 DESCRIPTION With TO-3 package High breakdown voltage APPLICATIONS Switching regulator Inverters Solenoid and relay drivers Motor controls PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(Ta=

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2N5108DESCRIPTIONHigh Current-Gain Bandwidth Product: f = 1200MHz (Min) @V = 10V,I = 50mAT CE ELow Saturation VoltageGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose Class C amplifier applicationsup to 1 GHzABS

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2N5109DESCRIPTIONHigh Current-Gain Bandwidth Product: f = 1200MHz (Min) @V = 10V,I = 50mAT CE ELow Saturation VoltageGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose Class C amplifier applicationsup to 1 GHzABS

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N5193 2N5194 2N5195 DESCRIPTION With TO-126 package Complement to type 2N5190/5191/5192 Excellent safe operating area APPLICATIONS For use in medium power linear and switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute max