2N51 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N51
Material: Ge
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.1 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Corriente del colector DC máxima (Ic): 0.008 A
Temperatura operativa máxima (Tj): 80 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 2.2 MHz
Ganancia de corriente contínua (hFE): 3
Encapsulados: X016
Búsqueda de reemplazo de 2N51
- Selecciónⓘ de transistores por parámetros
2N51 datasheet
2n5194 2n5195.pdf
Order this document MOTOROLA by 2N5194/D SEMICONDUCTOR TECHNICAL DATA 2N5194 2N5195* Silicon PNP Power Transistors *Motorola Preferred Device . . . for use in power amplifier and switching circuits, excellent safe area limits. Complement to NPN 2N5191, 2N5192 4 AMPERE POWER TRANSISTORS
2n5153hr.pdf
2N5153HR Hi-Rel PNP bipolar transistor 80 V, 5 A Datasheet - production data Features 1 3 2 Parameter Value TO-257 VCEO 80 V TO-39 IC (max.) 5 A 2 hFE at 10 V -150 mA > 70 1 3 Operating temperature -65 C to +200 C range SMD.5 Hi-Rel PNP bipolar transistor Linear gain characteristics Figure 1. Internal schematic diagram ESCC qualified European preferr
2n5191 2n5192.pdf
2N5191 2N5192 NPN power transistors Features NPN transistors Applications Linear and switching industrial equipment Description 1 2 The devices are manufactured in Planar 3 technology with Base Island layout. The SOT-32 resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. The PNP type of 2N5192 is 2N5195. Figure
2n5154hr.pdf
2N5154HR Hi-Rel NPN bipolar transistor 80 V - 5 A Datasheet - production data Features BVCEO 80 V 1 3 IC (max) 5 A 2 HFE at 10 V - 150 mA > 70 TO-39 TO-257 Operating temperature range - 65 C to + 200 C 2 1 3 Hi-Rel NPN bipolar transistor Linear gain characteristics SMD.5 ESCC qualified European preferred part list - EPPL Figure 1. Internal schematic diagr
2n5195.pdf
2N5195 Low voltage PNP power transistor Features Low saturation voltage PNP transistor Application Audio, power linear and switching equipment 1 2 Description 3 SOT-32 The device is manufactured in planar technology with base island layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. The Figure 1.
2n5172.pdf
2N5172 B TO-92 C E NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 25 V VCBO Collector-Base Voltage 25 V VEBO Em
2n5196 2n5197 2n5198 2n5199.pdf
2N5196/5197/5198/5199 Vishay Siliconix Monolithic N-Channel JFET Duals PRODUCT SUMMARY Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IG Max (pA) jVGS1 VGS2j Max (mV) 2N5196 0.7 to 4 50 1 15 5 2N5197 0.7 to 4 50 1 15 5 2N5198 0.7 to 4 50 1 15 10 2N5199 0.7 to 4 50 1 15 15 FEATURES BENEFITS APPLICATIONS D Monolithic Design D T
2n5172 2n6076 mps5172 mps6076.pdf
TM Central Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824 www.centralsemi.com
2n5190 2n5191 2n5192.pdf
145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824
2n5109.pdf
2N5109 www.centralsemi.com SILICON DESCRIPTION NPN RF TRANSISTOR The CENTRAL SEMICONDUCTOR 2N5109 is a Silicon NPN Epitaxial Planar RF Transistor mounted in a hermetically sealed package designed for high frequency amplifier applications. MARKING FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS (TA=25 C unless otherwise noted) SYMBOL UNITS Collector-Base Voltage VCBO 40 V Colle
2n5151 2n5152 2n5153 2n5154.pdf
145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824
2n5179.pdf
145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824
2n5114 2n5115 2n5116.pdf
145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824
2n5190 2n5191 2n5192.pdf
2N5190, 2N5191, 2N5192 Silicon NPN Power Transistors Silicon NPN power transistors are for use in power amplifier and switching circuits, excellent safe area limits. Complement to PNP 2N5194, 2N5195. http //onsemi.com Features ESD Ratings Machine Model, C; > 400 V 4.0 AMPERES Human Body Model, 3B; > 8000 V NPN SILICON Epoxy Meets UL 94 V-0 @ 0.125 in. POWER TRANSISTORS
2n5190g.pdf
2N5190, 2N5191, 2N5192 Silicon NPN Power Transistors Silicon NPN power transistors are for use in power amplifier and switching circuits, excellent safe area limits. Complement to PNP 2N5194, 2N5195. http //onsemi.com Features ESD Ratings Machine Model, C; > 400 V 4.0 AMPERES Human Body Model, 3B; > 8000 V NPN SILICON Epoxy Meets UL 94 V-0 @ 0.125 in. POWER TRANSISTORS
2n5190g 2n5191g 2n5192g.pdf
2N5190G, 2N5191G, 2N5192G Silicon NPN Power Transistors Silicon NPN power transistors are for use in power amplifier and switching circuits - excellent safe area limits. Complement to PNP http //onsemi.com 2N5194, 2N5195. 4.0 AMPERES Features NPN SILICON Epoxy Meets UL 94 V-0 @ 0.125 in. POWER TRANSISTORS These Devices are Pb-Free and are RoHS Compliant* 40, 60, 80 VOLTS -
2n5192g.pdf
2N5190, 2N5191, 2N5192 Silicon NPN Power Transistors Silicon NPN power transistors are for use in power amplifier and switching circuits, excellent safe area limits. Complement to PNP 2N5194, 2N5195. http //onsemi.com Features ESD Ratings Machine Model, C; > 400 V 4.0 AMPERES Human Body Model, 3B; > 8000 V NPN SILICON Epoxy Meets UL 94 V-0 @ 0.125 in. POWER TRANSISTORS
2n5191g.pdf
2N5190, 2N5191, 2N5192 Silicon NPN Power Transistors Silicon NPN power transistors are for use in power amplifier and switching circuits, excellent safe area limits. Complement to PNP 2N5194, 2N5195. http //onsemi.com Features ESD Ratings Machine Model, C; > 400 V 4.0 AMPERES Human Body Model, 3B; > 8000 V NPN SILICON Epoxy Meets UL 94 V-0 @ 0.125 in. POWER TRANSISTORS
2n5194g 2n5195g.pdf
2N5194G, 2N5195G Silicon PNP Power Transistors These devices are designed for use in power amplifier and switching circuits; excellent safe area limits. Features http //onsemi.com Complement to NPN 2N5191, 2N5192 4 AMPERE These Devices are Pb-Free and are RoHS Compliant* POWER TRANSISTORS MAXIMUM RATINGS (Note 1) PNP SILICON Rating Symbol Value Unit 60 - 80 VOLTS Collecto
2n5194 2n5195.pdf
2N5194, 2N5195 Preferred Devices Silicon PNP Power Transistors These devices are designed for use in power amplifier and switching circuits; excellent safe area limits. Complement to NPN 2N5191, 2N5192. http //onsemi.com Features Pb-Free Packages are Available* 4 AMPERE POWER TRANSISTORS MAXIMUM RATINGS (Note 1) PNP SILICON
2n5194g.pdf
2N5194, 2N5195 Preferred Devices Silicon PNP Power Transistors These devices are designed for use in power amplifier and switching circuits; excellent safe area limits. Complement to NPN 2N5191, 2N5192. http //onsemi.com Features Pb-Free Packages are Available* 4 AMPERE POWER TRANSISTORS MAXIMUM RATINGS (Note 1) PNP SILICON
2n5195g.pdf
2N5194, 2N5195 Preferred Devices Silicon PNP Power Transistors These devices are designed for use in power amplifier and switching circuits; excellent safe area limits. Complement to NPN 2N5191, 2N5192. http //onsemi.com Features Pb-Free Packages are Available* 4 AMPERE POWER TRANSISTORS MAXIMUM RATINGS (Note 1) PNP SILICON
2n5157t3.pdf
The documentation and process conversion measures necessary to comply with this document INCH-POUND shall be completed by 13 February 2014. MIL-PRF-19500/371H 13 December 2013 SUPERSEDING MIL-PRF-19500/371G 28 January 2009 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH POWER, TYPES 2N3902, 2N3902T1, 2N3902T3, 2N5157, 2N5157T1, AND
2n5157t1.pdf
The documentation and process conversion measures necessary to comply with this document INCH-POUND shall be completed by 13 February 2014. MIL-PRF-19500/371H 13 December 2013 SUPERSEDING MIL-PRF-19500/371G 28 January 2009 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH POWER, TYPES 2N3902, 2N3902T1, 2N3902T3, 2N5157, 2N5157T1, AND
2n5148.pdf
2N5148 Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 80V dia. IC = 2A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 3
2n5154n2a.pdf
SILICON EPITAXIAL NPN TRANSISTOR 2N5154N2A Hermetic Ceramic Surface Mount SMD1 Package High Reliability and Space Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise stated) VCBO Collector Base Voltage (IE = 0) 100V VCEO Collector Emitter Voltage (IB = 0) 80V VEBO Emitter Base Voltage 5.5V IC Continuous Collector Curren
2n5154smd05.pdf
2N5152SMD05 2N5154SMD05 MECHANICAL DATA NPN BIPOLAR TRANSISTOR IN A Dimensions in mm (inches) CERAMIC SURFACE MOUNT PACKAGE FOR HIGH-REL AND SPACE APPLICATIONS DESCRIPTION ! The 2N5152SMD05 and the 2N5154SMD05 are silicon expitaxial planar NPN transistors in a Ceramic S
2n5153smd.pdf
2N5153SMD Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed 0.89 (0.035) min. Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142) 3.41 (0.134) 3.41 (0.134) Max. Package for High Reliability Applications 1 3 Bipolar PNP Device. 2 VCEO = 80V IC = 5A 9.67 (0.381) All Semelab hermetically sealed products 9.38 (0.369) 0.50 (0.020) 0.26 (0
2n5151 2n5153.pdf
2N5151 2N5153 MECHANICAL DATA HIGH SPEED Dimensions in mm (inches) 8.89 (0.35) 9.40 (0.37) MEDIUM VOLTAGE 7.75 (0.305) 8.51 (0.335) SWITCHES 4.19 (0.165) 4.95 (0.195) DESCRIPTION 0.89 max. (0.035) 12.70 The 2N5151 and the 2N5153 are silicon (0.500) 7.75 (0.305) min. 8.51 (0.335) expitaxial planar PNP transistors in dia. jedec TO-39 metal case intended for use in switc
2n5154x-220m.pdf
SILICON NPN POWER TRANSISTOR 2N5154X-220M Hermetic TO220 Isolated Metal Package Ideally suited for Driver Circuits, Switching and Amplifier Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise stated) VCBO Collector Base Voltage (IE = 0) 100V VCEO Collector Emitter Voltage (IB = 0) 80V VEBO Emitter Base
2n5152a.pdf
2N5152A Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 80V dia. IC = 5A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 3
2n5154t2a.pdf
SILICON EPITAXIAL NPN TRANSISTOR 2N5154T2A Hermetic Metal TO39 Package High Reliability and Space Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise stated) VCBO Collector Base Voltage (IE = 0) 100V VCEO Collector Emitter Voltage (IB = 0) 80V VEBO Emitter Base Voltage 5.5V IC Continuous Collector Current 2A ICM Pea
2n5154xx.pdf
2N5154XX MECHANICAL DATA Dimensions in mm (inches) 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) HIGH SPEED 6.10 (0.240) 6.60 (0.260) MEDIUM VOLTAGE SWITCH 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200) typ. 2.54 2 (0.100) 1 3 DESCRIPTION 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) The 2N5154XX is a silicon expitaxial
2n5150.pdf
2N5150 Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 80V dia. IC = 2A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 3
2n5154x.pdf
2N5154X Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 80V dia. IC = 5A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 3
2n5152 2n5154.pdf
2N5152 2N5154 MECHANICAL DATA Dimensions in mm (inches) HIGH SPEED MEDIUM VOLTAGE SWITCHES DESCRIPTION ! The 2N5152 and the 2N5154 are silicon expitaxial planar NPN transistors in jedec
2n5154xsmd05.pdf
2N5154XSMD05 MECHANICAL DATA Dimensions in mm (inches) HIGH SPEED 7.54 (0.296) 0.76 (0.030) MEDIUM VOLTAGE min. 3.175 (0.125) 2.41 (0.095) 2.41 (0.095) Max. SWITCH 0.127 (0.005) 1 3 2 DESCRIPTION 0.127 (0.005) The 2N5154XSMD05 is a silicon expitaxial 16 PLCS 0.127 (0.005) 0.50(0.020) 0.50 (0.020) planar NPN transistors in a Ceramic Surface max. 7.26 (0.286) Mount
2n5154xsmd.pdf
2N5154XSMD MECHANICAL DATA Dimensions in mm (inches) HIGH SPEED MEDIUM VOLTAGE SWITCH DESCRIPTION The 2N5154XSMD is a silicon expitaxial planar NPN transistors in a Ceramic Surface Mount Package for use in Switching and Linear applications.
2n5152smd.pdf
2N5152SMD Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89 (0.035) min. Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142) 3.41 (0.134) 3.41 (0.134) Max. Package for High Reliability Applications 1 3 Bipolar NPN Device. 2 VCEO = 80V IC = 5A 9.67 (0.381) All Semelab hermetically sealed products 9.38 (0.369) 0.50 (0.020) 0.26 (0
2n5151xsmd05.pdf
MECHANICAL DATA PNP BIPOLAR TRANSISTOR IN A Dimensions in mm (inches) CERAMIC SURFACE MOUNT 7.54 (0.296) PACKAGE FOR HIGH-REL AND 0.76 (0.030) min. 3.175 (0.125) SPACE APPLICATIONS 2.41 (0.095) 2.41 (0.095) Max. 0.127 (0.005) 1 3 DESCRIPTION 2 The 2N5151XSMD05 is a silicon expitaxial planar PNP transistor in a Ceramic Surface Mount Package for use in Switching and 0.127 (
2n5153smd05.pdf
2N5151SMD05 2N5153SMD05 MECHANICAL DATA PNP BIPOLAR TRANSISTOR IN A Dimensions in mm (inches) CERAMIC SURFACE MOUNT PACKAGE FOR HIGH-REL AND SPACE APPLICATIONS DESCRIPTION ! The 2N5151SMD05 and the 2N5153SMD05 are silicon expitaxial planar PNP transistors in a Ceramic S
2n5151smd05.pdf
2N5151SMD05 2N5153SMD05 MECHANICAL DATA PNP BIPOLAR TRANSISTOR IN A Dimensions in mm (inches) CERAMIC SURFACE MOUNT PACKAGE FOR HIGH-REL AND SPACE APPLICATIONS DESCRIPTION ! The 2N5151SMD05 and the 2N5153SMD05 are silicon expitaxial planar PNP transistors in a Ceramic S
2n5154n1b.pdf
SILICON EPITAXIAL NPN TRANSISTOR 2N5154N1B Hermetic Ceramic Surface Mount SMD0.5 Package High Reliability and Space Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise stated) VCBO Collector Base Voltage (IE = 0) 100V VCEO Collector Emitter Voltage (IB = 0) 80V VEBO Emitter Base Voltage 5.5V IC Continuous Collector Curr
2n5151-220m.pdf
2N5151-220M 2N5153-220M MECHANICAL DATA Dimensions in mm (inches) 4.70 HIGH SPEED 5.00 10.41 0.70 10.67 MEDIUM VOLTAGE 0.90 SWITCHES 3.56 Dia. 3.81 DESCRIPTION 1 2 3 The 2N5151-220M and the 2N5153-220M are silicon expitaxial planar PNP transistors in TO-220 (JEDEC TO-257AB) metal case intended for use in switching applications. The complementary NPN types are the 0.89 2
2n5152smd05.pdf
2N5152SMD05 2N5154SMD05 MECHANICAL DATA NPN BIPOLAR TRANSISTOR IN A Dimensions in mm (inches) CERAMIC SURFACE MOUNT PACKAGE FOR HIGH-REL AND SPACE APPLICATIONS DESCRIPTION ! The 2N5152SMD05 and the 2N5154SMD05 are silicon expitaxial planar NPN transistors in a Ceramic S
2n5172.pdf
2N5172 0.5 A, 25 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-92 General Purpose Amplifier Transistor G H Emitter Collector Base J A D Collector Millimeter REF. Min. Max. B A 4.40 4.70 B 4.30 4.70 K C 12.70 - D 3.30 3.81 E 0.3
2n5108.pdf
2N5108 NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION The 2N5108 is a Designed for General Purpose Class C Amplifier Applications Up to 1 GHz. PACKAGE STYLE TO-39 FEATURES GPE = 6.0 dB Typ. at 1.0 GHz FT = 1,500 MHz Typ. at 15 V/ 50 mA Hermetic TO-39 Package MAXIMUM RATINGS IC 400 mA VCB 55 V VCE 30 V PDISS 3.5 W @ TC = 25 OC TJ -65 to +200 OC 1 = Emitter 2
2n5179.pdf
IS / IECQC 700000 IS/ISO 9002 IS / IECQC 750100 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR TRANSISTOR 2N5179 TO-72 Boca Semiconductor Corp BSC Low Noise Tuned Amplifiers. ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector -Base Voltage VCBO 20 V Collector -Emitter Voltage VCEO 12 V Emitte
2n5114 2n5115 2n5116.pdf
P-Channel JFET Switch CORPORATION 2N5114 2N5116 GENERAL DESCRIPTION ABSOLUTE MAXIMUM RATINGS (T = 25oC unless otherwise noted) A Ideal for inverting switching or "Virtual Gnd" switching into inverting input of Op. Amp. No driver is required and 10VAC Gate-Drain or Gate-Source Voltage . . . . . . . . . . . . . . . . . 30V signals can be handled using only +5V logic (TTL or CMOS). G
2n5191 92.pdf
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL SILICON POWER TRANSISTORS 2N5191 2N5192 TO126 Plastic Package E C B Use in Medium Power Linear and Switching Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL 2N5191 2N5192 UNIT Collector -Base Voltage VCBO 60 80 V Collector -Emitter Voltage VCEO 60 80 V Emitter Base Vo
2n5172.pdf
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR 2N5172 TO-92 Plastic Package B C E ABSOLUTE MAXIMUM RATINGS(Ta=25 C unless specified otherwise) DESCRIPTION SYMBOL VALUE UNITS VCEO Collector Emitter Voltage 25 V VCBO Collector Base Voltage 25 V VEBO Emitter Base Voltage 5 V IC Collector Current C
2n5190 2n5191 2n5192.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5190 2N5191 2N5192 DESCRIPTION With TO-126 package Complement to type 2N5193,2N5194,2N5195 Excellent safe operating area APPLICATIONS For use in medium power linear and switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum
2n5157.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5157 DESCRIPTION With TO-3 package High breakdown voltage APPLICATIONS Switching regulator Inverters Solenoid and relay drivers Motor controls PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol MAXIMUN RATINGS(Ta=25 ) SYMBOL PA
2n5193 2n5194 2n5195.pdf
Product Specification www.jmnic.com Silicon PNP Power Transistors 2N5193 2N5194 2N5195 DESCRIPTION With TO-126 package Complement to type 2N5190,2N5191,2N5192 Excellent safe operating area APPLICATIONS For use in medium power linear and switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum
2n5152u3.pdf
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Website http //www.microsemi.com NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/544 DEVICES LEVELS JAN 2N5152 2N5154 JANTX 2N5152L 2N5154L JANTXV 2N5152U3 2N5154U3 JANS ABSOLUTE MAXIMUM RATINGS (TC = +25 C unless otherwise noted) Parameters / Test
2n5151u3.pdf
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Website http //www.microsemi.com PNP POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/545 DEVICES LEVELS JAN 2N5151 2N5153 JANTX 2N5151L 2N5153L JANTXV 2N5151U3 2N5153U3 JANS ABSOLUTE MAXIMUM RATINGS (TC = +25 C unless otherwise noted) Parameters / Te
mx2n5114 mx2n5115 mx2n5116.pdf
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Website http //www.microsemi.com P-CHANNEL J-FET Equivalent To MIL-PRF-19500/476 DEVICES LEVELS 2N5114 MQ = JAN Equivalent 2N5115 MX = JANTX Equivalent 2N5116 MV = JANTXV Equivalent ABSOLUTE MAXIMUM RATINGS (TC = +25 C unless otherwise noted) Parameters / Test C
2n5114ub 2n5114ube3 2n5115ub 2n5115ube3 2n5116ub 2n5116ube3.pdf
2N5114UB thru 2N5116UB Screening in reference to Available on P-CHANNEL J-FET MIL-PRF-19500 commercial versions available DESCRIPTION This low-profile surface mount device is available in military equivalents for high-reliability applications. Microsemi also offers numerous other products to meet higher and lower power voltage regulation applications. Important For t
2n5114e3 2n5115e3 2n5116e3.pdf
2N5114 thru 2N5116 Screening in reference to Available on P-CHANNEL J-FET MIL-PRF-19500 commercial versions available DESCRIPTION This leaded device is available in high-reliability equivalents for high-reliability applications. Microsemi also offers numerous other products to meet higher and lower power voltage regulation applications. Important For the latest infor
2n5154u3.pdf
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Website http //www.microsemi.com NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/544 DEVICES LEVELS JAN 2N5152 2N5154 JANTX 2N5152L 2N5154L JANTXV 2N5152U3 2N5154U3 JANS ABSOLUTE MAXIMUM RATINGS (TC = +25 C unless otherwise noted) Parameters / Test
2n5153u3.pdf
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Website http //www.microsemi.com PNP POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/545 DEVICES LEVELS JAN 2N5151 2N5153 JANTX 2N5151L 2N5153L JANTXV 2N5151U3 2N5153U3 JANS ABSOLUTE MAXIMUM RATINGS (TC = +25 C unless otherwise noted) Parameters / Te
2n5109.pdf
Data Sheet No. 2N5109 Generic Part Number Type 2N5109 2N5109 Geometry 1007 Polarity NPN REF MIL-PRF-19500/453 Qual Level JAN - JANTXV Features VHF-UHF amplifier silicon transis- tor. Housed in TO-39 case. Also available in chip form using the 1007 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/398 which TO-39 Semicoa meets in all cases. M
2n5151 2n5151l 2n5153 2n5153l.pdf
PNP Power Silicon Transistor 2N5151, 2N5151L & 2N5153, 2N5153L Features Available in commercial, JAN, JANTX, JANTXV, JANS and JANSR 100K rads (Si) per MIL-PRF-19500/545 TO-5 Package 2N5151L, 2N5153L TO-39 (TO-205AD) Package 2N5151, 2N5153 Maximum Ratings (TC = +25 C unless otherwise noted) Ratings Symbol Value Units Collector - Emitter Voltage VCEO 80 Vdc Collector - Base V
2n5152 2n5152l 2n5154 2n5154l.pdf
NPN Power Silicon Transistor 2N5152, 2N5152L & 2N5154, 2N5154L Features Available in commercial, JAN, JANTX, JANTXV, JANS and JANSR 100K rads (Si) per MIL-PRF-19500/544 TO-5 Package 2N5152L, 2N5154L TO-39 (TO-205AD) Package 2N5152, 2N5154 Maximum Ratings (TC = +25 C unless otherwise noted) Ratings Symbol Value Units Collector - Emitter Voltage VCEO 80 Vdc Collector - Base V
2n3902 2n5157.pdf
NPN High Power Silicon Transistors 2N3902 & 2N5157 Features Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/371 TO-3 (TO-204AA) Package Maximum Ratings Ratings Symbol 2N3902 2N5157 Units Collector - Emitter Voltage VCEO 400 500 Vdc Emitter - Base Voltage VEBO 5.0 6.0 Vdc Collector - Base Voltage VCBO 7.0 Vdc Base Current IB 2.0 Adc Collector Current IC 3.5 Adc Total
2n5172 2n5174 2n5209 2n5210 2n5219 2n5220 2n5221 2n5223 2n5225 2n5226 2n5228 2n5232 2n5232a 2n5249 2n5249a 2n5305.pdf
2n5190 2n5191 2n5192.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5190 2N5191 2N5192 DESCRIPTION With TO-126 package Complement to type 2N5193/5194/5195 Excellent safe operating area APPLICATIONS For use in medium power linear and switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute max
2n5157.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5157 DESCRIPTION With TO-3 package High breakdown voltage APPLICATIONS Switching regulator Inverters Solenoid and relay drivers Motor controls PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=
2n5108.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N5108 DESCRIPTION High Current-Gain Bandwidth Product f = 1200MHz (Min) @V = 10V,I = 50mA T CE E Low Saturation Voltage Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose Class C amplifier applications up to 1 GHz ABS
2n5109.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N5109 DESCRIPTION High Current-Gain Bandwidth Product f = 1200MHz (Min) @V = 10V,I = 50mA T CE E Low Saturation Voltage Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose Class C amplifier applications up to 1 GHz ABS
2n5193 2n5194 2n5195.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N5193 2N5194 2N5195 DESCRIPTION With TO-126 package Complement to type 2N5190/5191/5192 Excellent safe operating area APPLICATIONS For use in medium power linear and switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute max
Otros transistores... 2N5093 , 2N5094 , 2N5095 , 2N5096 , 2N5097 , 2N5097S , 2N5098 , 2N5099 , TIP41C , 2N5100 , 2N5101 , 2N5102 , 2N5106 , 2N5107 , 2N5108 , 2N5108A , 2N5109 .
History: 2SC2463D
History: 2SC2463D
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