2N51 - описание и поиск аналогов

Order this document MOTOROLA by 2N5194/D SEMICONDUCTOR TECHNICAL DATA 2N5194 2N5195* Silicon PNP Power Transistors *Motorola Preferred Device . . . for use in power amplifier and switching circuits, excellent safe area limits. Complement to NPN 2N5191, 2N5192 4 AMPERE POWER TRANSISTORS

2N5153HR Hi-Rel PNP bipolar transistor 80 V, 5 A Datasheet - production data Features 1 3 2 Parameter Value TO-257 VCEO 80 V TO-39 IC (max.) 5 A 2 hFE at 10 V -150 mA > 70 1 3 Operating temperature -65 C to +200 C range SMD.5 Hi-Rel PNP bipolar transistor Linear gain characteristics Figure 1. Internal schematic diagram ESCC qualified European preferr

2N5191 2N5192 NPN power transistors Features NPN transistors Applications Linear and switching industrial equipment Description 1 2 The devices are manufactured in Planar 3 technology with Base Island layout. The SOT-32 resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. The PNP type of 2N5192 is 2N5195. Figure

2N5154HR Hi-Rel NPN bipolar transistor 80 V - 5 A Datasheet - production data Features BVCEO 80 V 1 3 IC (max) 5 A 2 HFE at 10 V - 150 mA > 70 TO-39 TO-257 Operating temperature range - 65 C to + 200 C 2 1 3 Hi-Rel NPN bipolar transistor Linear gain characteristics SMD.5 ESCC qualified European preferred part list - EPPL Figure 1. Internal schematic diagr

2N5195 Low voltage PNP power transistor Features Low saturation voltage PNP transistor Application Audio, power linear and switching equipment 1 2 Description 3 SOT-32 The device is manufactured in planar technology with base island layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. The Figure 1.

2N5172 B TO-92 C E NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 25 V VCBO Collector-Base Voltage 25 V VEBO Em

2N5196/5197/5198/5199 Vishay Siliconix Monolithic N-Channel JFET Duals PRODUCT SUMMARY Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IG Max (pA) jVGS1 VGS2j Max (mV) 2N5196 0.7 to 4 50 1 15 5 2N5197 0.7 to 4 50 1 15 5 2N5198 0.7 to 4 50 1 15 10 2N5199 0.7 to 4 50 1 15 15 FEATURES BENEFITS APPLICATIONS D Monolithic Design D T

TM Central Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824 www.centralsemi.com

145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824

2N5109 www.centralsemi.com SILICON DESCRIPTION NPN RF TRANSISTOR The CENTRAL SEMICONDUCTOR 2N5109 is a Silicon NPN Epitaxial Planar RF Transistor mounted in a hermetically sealed package designed for high frequency amplifier applications. MARKING FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS (TA=25 C unless otherwise noted) SYMBOL UNITS Collector-Base Voltage VCBO 40 V Colle

145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824

145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824

145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824

2N5190, 2N5191, 2N5192 Silicon NPN Power Transistors Silicon NPN power transistors are for use in power amplifier and switching circuits, excellent safe area limits. Complement to PNP 2N5194, 2N5195. http //onsemi.com Features ESD Ratings Machine Model, C; > 400 V 4.0 AMPERES Human Body Model, 3B; > 8000 V NPN SILICON Epoxy Meets UL 94 V-0 @ 0.125 in. POWER TRANSISTORS

2N5190, 2N5191, 2N5192 Silicon NPN Power Transistors Silicon NPN power transistors are for use in power amplifier and switching circuits, excellent safe area limits. Complement to PNP 2N5194, 2N5195. http //onsemi.com Features ESD Ratings Machine Model, C; > 400 V 4.0 AMPERES Human Body Model, 3B; > 8000 V NPN SILICON Epoxy Meets UL 94 V-0 @ 0.125 in. POWER TRANSISTORS

2N5190G, 2N5191G, 2N5192G Silicon NPN Power Transistors Silicon NPN power transistors are for use in power amplifier and switching circuits - excellent safe area limits. Complement to PNP http //onsemi.com 2N5194, 2N5195. 4.0 AMPERES Features NPN SILICON Epoxy Meets UL 94 V-0 @ 0.125 in. POWER TRANSISTORS These Devices are Pb-Free and are RoHS Compliant* 40, 60, 80 VOLTS -

2N5190, 2N5191, 2N5192 Silicon NPN Power Transistors Silicon NPN power transistors are for use in power amplifier and switching circuits, excellent safe area limits. Complement to PNP 2N5194, 2N5195. http //onsemi.com Features ESD Ratings Machine Model, C; > 400 V 4.0 AMPERES Human Body Model, 3B; > 8000 V NPN SILICON Epoxy Meets UL 94 V-0 @ 0.125 in. POWER TRANSISTORS

2N5190, 2N5191, 2N5192 Silicon NPN Power Transistors Silicon NPN power transistors are for use in power amplifier and switching circuits, excellent safe area limits. Complement to PNP 2N5194, 2N5195. http //onsemi.com Features ESD Ratings Machine Model, C; > 400 V 4.0 AMPERES Human Body Model, 3B; > 8000 V NPN SILICON Epoxy Meets UL 94 V-0 @ 0.125 in. POWER TRANSISTORS

2N5194G, 2N5195G Silicon PNP Power Transistors These devices are designed for use in power amplifier and switching circuits; excellent safe area limits. Features http //onsemi.com Complement to NPN 2N5191, 2N5192 4 AMPERE These Devices are Pb-Free and are RoHS Compliant* POWER TRANSISTORS MAXIMUM RATINGS (Note 1) PNP SILICON Rating Symbol Value Unit 60 - 80 VOLTS Collecto

2N5194, 2N5195 Preferred Devices Silicon PNP Power Transistors These devices are designed for use in power amplifier and switching circuits; excellent safe area limits. Complement to NPN 2N5191, 2N5192. http //onsemi.com Features Pb-Free Packages are Available* 4 AMPERE POWER TRANSISTORS MAXIMUM RATINGS (Note 1) PNP SILICON

2N5194, 2N5195 Preferred Devices Silicon PNP Power Transistors These devices are designed for use in power amplifier and switching circuits; excellent safe area limits. Complement to NPN 2N5191, 2N5192. http //onsemi.com Features Pb-Free Packages are Available* 4 AMPERE POWER TRANSISTORS MAXIMUM RATINGS (Note 1) PNP SILICON

2N5194, 2N5195 Preferred Devices Silicon PNP Power Transistors These devices are designed for use in power amplifier and switching circuits; excellent safe area limits. Complement to NPN 2N5191, 2N5192. http //onsemi.com Features Pb-Free Packages are Available* 4 AMPERE POWER TRANSISTORS MAXIMUM RATINGS (Note 1) PNP SILICON

The documentation and process conversion measures necessary to comply with this document INCH-POUND shall be completed by 13 February 2014. MIL-PRF-19500/371H 13 December 2013 SUPERSEDING MIL-PRF-19500/371G 28 January 2009 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH POWER, TYPES 2N3902, 2N3902T1, 2N3902T3, 2N5157, 2N5157T1, AND

The documentation and process conversion measures necessary to comply with this document INCH-POUND shall be completed by 13 February 2014. MIL-PRF-19500/371H 13 December 2013 SUPERSEDING MIL-PRF-19500/371G 28 January 2009 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH POWER, TYPES 2N3902, 2N3902T1, 2N3902T3, 2N5157, 2N5157T1, AND

2N5148 Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 80V dia. IC = 2A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 3

SILICON EPITAXIAL NPN TRANSISTOR 2N5154N2A Hermetic Ceramic Surface Mount SMD1 Package High Reliability and Space Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise stated) VCBO Collector Base Voltage (IE = 0) 100V VCEO Collector Emitter Voltage (IB = 0) 80V VEBO Emitter Base Voltage 5.5V IC Continuous Collector Curren

2N5152SMD05 2N5154SMD05 MECHANICAL DATA NPN BIPOLAR TRANSISTOR IN A Dimensions in mm (inches) CERAMIC SURFACE MOUNT PACKAGE FOR HIGH-REL AND SPACE APPLICATIONS DESCRIPTION ! The 2N5152SMD05 and the 2N5154SMD05 are silicon expitaxial planar NPN transistors in a Ceramic S

2N5153SMD Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed 0.89 (0.035) min. Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142) 3.41 (0.134) 3.41 (0.134) Max. Package for High Reliability Applications 1 3 Bipolar PNP Device. 2 VCEO = 80V IC = 5A 9.67 (0.381) All Semelab hermetically sealed products 9.38 (0.369) 0.50 (0.020) 0.26 (0

2N5151 2N5153 MECHANICAL DATA HIGH SPEED Dimensions in mm (inches) 8.89 (0.35) 9.40 (0.37) MEDIUM VOLTAGE 7.75 (0.305) 8.51 (0.335) SWITCHES 4.19 (0.165) 4.95 (0.195) DESCRIPTION 0.89 max. (0.035) 12.70 The 2N5151 and the 2N5153 are silicon (0.500) 7.75 (0.305) min. 8.51 (0.335) expitaxial planar PNP transistors in dia. jedec TO-39 metal case intended for use in switc

SILICON NPN POWER TRANSISTOR 2N5154X-220M Hermetic TO220 Isolated Metal Package Ideally suited for Driver Circuits, Switching and Amplifier Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise stated) VCBO Collector Base Voltage (IE = 0) 100V VCEO Collector Emitter Voltage (IB = 0) 80V VEBO Emitter Base

2N5152A Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 80V dia. IC = 5A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 3

SILICON EPITAXIAL NPN TRANSISTOR 2N5154T2A Hermetic Metal TO39 Package High Reliability and Space Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise stated) VCBO Collector Base Voltage (IE = 0) 100V VCEO Collector Emitter Voltage (IB = 0) 80V VEBO Emitter Base Voltage 5.5V IC Continuous Collector Current 2A ICM Pea

2N5154XX MECHANICAL DATA Dimensions in mm (inches) 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) HIGH SPEED 6.10 (0.240) 6.60 (0.260) MEDIUM VOLTAGE SWITCH 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200) typ. 2.54 2 (0.100) 1 3 DESCRIPTION 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) The 2N5154XX is a silicon expitaxial

2N5150 Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 80V dia. IC = 2A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 3

2N5154X Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 80V dia. IC = 5A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 3

2N5152 2N5154 MECHANICAL DATA Dimensions in mm (inches) HIGH SPEED MEDIUM VOLTAGE SWITCHES DESCRIPTION ! The 2N5152 and the 2N5154 are silicon expitaxial planar NPN transistors in jedec

2N5154XSMD05 MECHANICAL DATA Dimensions in mm (inches) HIGH SPEED 7.54 (0.296) 0.76 (0.030) MEDIUM VOLTAGE min. 3.175 (0.125) 2.41 (0.095) 2.41 (0.095) Max. SWITCH 0.127 (0.005) 1 3 2 DESCRIPTION 0.127 (0.005) The 2N5154XSMD05 is a silicon expitaxial 16 PLCS 0.127 (0.005) 0.50(0.020) 0.50 (0.020) planar NPN transistors in a Ceramic Surface max. 7.26 (0.286) Mount

2N5154XSMD MECHANICAL DATA Dimensions in mm (inches) HIGH SPEED MEDIUM VOLTAGE SWITCH DESCRIPTION The 2N5154XSMD is a silicon expitaxial planar NPN transistors in a Ceramic Surface Mount Package for use in Switching and Linear applications.

2N5152SMD Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89 (0.035) min. Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142) 3.41 (0.134) 3.41 (0.134) Max. Package for High Reliability Applications 1 3 Bipolar NPN Device. 2 VCEO = 80V IC = 5A 9.67 (0.381) All Semelab hermetically sealed products 9.38 (0.369) 0.50 (0.020) 0.26 (0

MECHANICAL DATA PNP BIPOLAR TRANSISTOR IN A Dimensions in mm (inches) CERAMIC SURFACE MOUNT 7.54 (0.296) PACKAGE FOR HIGH-REL AND 0.76 (0.030) min. 3.175 (0.125) SPACE APPLICATIONS 2.41 (0.095) 2.41 (0.095) Max. 0.127 (0.005) 1 3 DESCRIPTION 2 The 2N5151XSMD05 is a silicon expitaxial planar PNP transistor in a Ceramic Surface Mount Package for use in Switching and 0.127 (

2N5151SMD05 2N5153SMD05 MECHANICAL DATA PNP BIPOLAR TRANSISTOR IN A Dimensions in mm (inches) CERAMIC SURFACE MOUNT PACKAGE FOR HIGH-REL AND SPACE APPLICATIONS DESCRIPTION ! The 2N5151SMD05 and the 2N5153SMD05 are silicon expitaxial planar PNP transistors in a Ceramic S

2N5151SMD05 2N5153SMD05 MECHANICAL DATA PNP BIPOLAR TRANSISTOR IN A Dimensions in mm (inches) CERAMIC SURFACE MOUNT PACKAGE FOR HIGH-REL AND SPACE APPLICATIONS DESCRIPTION ! The 2N5151SMD05 and the 2N5153SMD05 are silicon expitaxial planar PNP transistors in a Ceramic S

SILICON EPITAXIAL NPN TRANSISTOR 2N5154N1B Hermetic Ceramic Surface Mount SMD0.5 Package High Reliability and Space Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise stated) VCBO Collector Base Voltage (IE = 0) 100V VCEO Collector Emitter Voltage (IB = 0) 80V VEBO Emitter Base Voltage 5.5V IC Continuous Collector Curr

2N5151-220M 2N5153-220M MECHANICAL DATA Dimensions in mm (inches) 4.70 HIGH SPEED 5.00 10.41 0.70 10.67 MEDIUM VOLTAGE 0.90 SWITCHES 3.56 Dia. 3.81 DESCRIPTION 1 2 3 The 2N5151-220M and the 2N5153-220M are silicon expitaxial planar PNP transistors in TO-220 (JEDEC TO-257AB) metal case intended for use in switching applications. The complementary NPN types are the 0.89 2

2N5152SMD05 2N5154SMD05 MECHANICAL DATA NPN BIPOLAR TRANSISTOR IN A Dimensions in mm (inches) CERAMIC SURFACE MOUNT PACKAGE FOR HIGH-REL AND SPACE APPLICATIONS DESCRIPTION ! The 2N5152SMD05 and the 2N5154SMD05 are silicon expitaxial planar NPN transistors in a Ceramic S

2N5172 0.5 A, 25 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-92 General Purpose Amplifier Transistor G H Emitter Collector Base J A D Collector Millimeter REF. Min. Max. B A 4.40 4.70 B 4.30 4.70 K C 12.70 - D 3.30 3.81 E 0.3

2N5108 NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION The 2N5108 is a Designed for General Purpose Class C Amplifier Applications Up to 1 GHz. PACKAGE STYLE TO-39 FEATURES GPE = 6.0 dB Typ. at 1.0 GHz FT = 1,500 MHz Typ. at 15 V/ 50 mA Hermetic TO-39 Package MAXIMUM RATINGS IC 400 mA VCB 55 V VCE 30 V PDISS 3.5 W @ TC = 25 OC TJ -65 to +200 OC 1 = Emitter 2

IS / IECQC 700000 IS/ISO 9002 IS / IECQC 750100 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR TRANSISTOR 2N5179 TO-72 Boca Semiconductor Corp BSC Low Noise Tuned Amplifiers. ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector -Base Voltage VCBO 20 V Collector -Emitter Voltage VCEO 12 V Emitte

P-Channel JFET Switch CORPORATION 2N5114 2N5116 GENERAL DESCRIPTION ABSOLUTE MAXIMUM RATINGS (T = 25oC unless otherwise noted) A Ideal for inverting switching or "Virtual Gnd" switching into inverting input of Op. Amp. No driver is required and 10VAC Gate-Drain or Gate-Source Voltage . . . . . . . . . . . . . . . . . 30V signals can be handled using only +5V logic (TTL or CMOS). G

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL SILICON POWER TRANSISTORS 2N5191 2N5192 TO126 Plastic Package E C B Use in Medium Power Linear and Switching Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL 2N5191 2N5192 UNIT Collector -Base Voltage VCBO 60 80 V Collector -Emitter Voltage VCEO 60 80 V Emitter Base Vo

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR 2N5172 TO-92 Plastic Package B C E ABSOLUTE MAXIMUM RATINGS(Ta=25 C unless specified otherwise) DESCRIPTION SYMBOL VALUE UNITS VCEO Collector Emitter Voltage 25 V VCBO Collector Base Voltage 25 V VEBO Emitter Base Voltage 5 V IC Collector Current C

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5190 2N5191 2N5192 DESCRIPTION With TO-126 package Complement to type 2N5193,2N5194,2N5195 Excellent safe operating area APPLICATIONS For use in medium power linear and switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5157 DESCRIPTION With TO-3 package High breakdown voltage APPLICATIONS Switching regulator Inverters Solenoid and relay drivers Motor controls PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol MAXIMUN RATINGS(Ta=25 ) SYMBOL PA

Product Specification www.jmnic.com Silicon PNP Power Transistors 2N5193 2N5194 2N5195 DESCRIPTION With TO-126 package Complement to type 2N5190,2N5191,2N5192 Excellent safe operating area APPLICATIONS For use in medium power linear and switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Website http //www.microsemi.com NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/544 DEVICES LEVELS JAN 2N5152 2N5154 JANTX 2N5152L 2N5154L JANTXV 2N5152U3 2N5154U3 JANS ABSOLUTE MAXIMUM RATINGS (TC = +25 C unless otherwise noted) Parameters / Test

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Website http //www.microsemi.com PNP POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/545 DEVICES LEVELS JAN 2N5151 2N5153 JANTX 2N5151L 2N5153L JANTXV 2N5151U3 2N5153U3 JANS ABSOLUTE MAXIMUM RATINGS (TC = +25 C unless otherwise noted) Parameters / Te

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Website http //www.microsemi.com P-CHANNEL J-FET Equivalent To MIL-PRF-19500/476 DEVICES LEVELS 2N5114 MQ = JAN Equivalent 2N5115 MX = JANTX Equivalent 2N5116 MV = JANTXV Equivalent ABSOLUTE MAXIMUM RATINGS (TC = +25 C unless otherwise noted) Parameters / Test C

2N5114UB thru 2N5116UB Screening in reference to Available on P-CHANNEL J-FET MIL-PRF-19500 commercial versions available DESCRIPTION This low-profile surface mount device is available in military equivalents for high-reliability applications. Microsemi also offers numerous other products to meet higher and lower power voltage regulation applications. Important For t

2N5114 thru 2N5116 Screening in reference to Available on P-CHANNEL J-FET MIL-PRF-19500 commercial versions available DESCRIPTION This leaded device is available in high-reliability equivalents for high-reliability applications. Microsemi also offers numerous other products to meet higher and lower power voltage regulation applications. Important For the latest infor

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Website http //www.microsemi.com NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/544 DEVICES LEVELS JAN 2N5152 2N5154 JANTX 2N5152L 2N5154L JANTXV 2N5152U3 2N5154U3 JANS ABSOLUTE MAXIMUM RATINGS (TC = +25 C unless otherwise noted) Parameters / Test

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Website http //www.microsemi.com PNP POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/545 DEVICES LEVELS JAN 2N5151 2N5153 JANTX 2N5151L 2N5153L JANTXV 2N5151U3 2N5153U3 JANS ABSOLUTE MAXIMUM RATINGS (TC = +25 C unless otherwise noted) Parameters / Te

Data Sheet No. 2N5109 Generic Part Number Type 2N5109 2N5109 Geometry 1007 Polarity NPN REF MIL-PRF-19500/453 Qual Level JAN - JANTXV Features VHF-UHF amplifier silicon transis- tor. Housed in TO-39 case. Also available in chip form using the 1007 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/398 which TO-39 Semicoa meets in all cases. M

PNP Power Silicon Transistor 2N5151, 2N5151L & 2N5153, 2N5153L Features Available in commercial, JAN, JANTX, JANTXV, JANS and JANSR 100K rads (Si) per MIL-PRF-19500/545 TO-5 Package 2N5151L, 2N5153L TO-39 (TO-205AD) Package 2N5151, 2N5153 Maximum Ratings (TC = +25 C unless otherwise noted) Ratings Symbol Value Units Collector - Emitter Voltage VCEO 80 Vdc Collector - Base V

NPN Power Silicon Transistor 2N5152, 2N5152L & 2N5154, 2N5154L Features Available in commercial, JAN, JANTX, JANTXV, JANS and JANSR 100K rads (Si) per MIL-PRF-19500/544 TO-5 Package 2N5152L, 2N5154L TO-39 (TO-205AD) Package 2N5152, 2N5154 Maximum Ratings (TC = +25 C unless otherwise noted) Ratings Symbol Value Units Collector - Emitter Voltage VCEO 80 Vdc Collector - Base V

NPN High Power Silicon Transistors 2N3902 & 2N5157 Features Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/371 TO-3 (TO-204AA) Package Maximum Ratings Ratings Symbol 2N3902 2N5157 Units Collector - Emitter Voltage VCEO 400 500 Vdc Emitter - Base Voltage VEBO 5.0 6.0 Vdc Collector - Base Voltage VCBO 7.0 Vdc Base Current IB 2.0 Adc Collector Current IC 3.5 Adc Total

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5190 2N5191 2N5192 DESCRIPTION With TO-126 package Complement to type 2N5193/5194/5195 Excellent safe operating area APPLICATIONS For use in medium power linear and switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute max

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5157 DESCRIPTION With TO-3 package High breakdown voltage APPLICATIONS Switching regulator Inverters Solenoid and relay drivers Motor controls PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N5108 DESCRIPTION High Current-Gain Bandwidth Product f = 1200MHz (Min) @V = 10V,I = 50mA T CE E Low Saturation Voltage Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose Class C amplifier applications up to 1 GHz ABS

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N5109 DESCRIPTION High Current-Gain Bandwidth Product f = 1200MHz (Min) @V = 10V,I = 50mA T CE E Low Saturation Voltage Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose Class C amplifier applications up to 1 GHz ABS

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N5193 2N5194 2N5195 DESCRIPTION With TO-126 package Complement to type 2N5190/5191/5192 Excellent safe operating area APPLICATIONS For use in medium power linear and switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute max