2N5100 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N5100  📄📄 

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 10 W

Tensión colector-base (Vcb): 450 V

Tensión colector-emisor (Vce): 400 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 1 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 20 MHz

Capacitancia de salida (Cc): 20 pF

Ganancia de corriente contínua (hFE): 20

Encapsulados: TO5F

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2N5100 datasheet

 9.1. Size:488K  central
 2n5109.pdf pdf_icon

2N5100

2N5109 www.centralsemi.com SILICON DESCRIPTION NPN RF TRANSISTOR The CENTRAL SEMICONDUCTOR 2N5109 is a Silicon NPN Epitaxial Planar RF Transistor mounted in a hermetically sealed package designed for high frequency amplifier applications. MARKING FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS (TA=25 C unless otherwise noted) SYMBOL UNITS Collector-Base Voltage VCBO 40 V Colle

 9.2. Size:28K  advanced-semi
 2n5108.pdf pdf_icon

2N5100

2N5108 NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION The 2N5108 is a Designed for General Purpose Class C Amplifier Applications Up to 1 GHz. PACKAGE STYLE TO-39 FEATURES GPE = 6.0 dB Typ. at 1.0 GHz FT = 1,500 MHz Typ. at 15 V/ 50 mA Hermetic TO-39 Package MAXIMUM RATINGS IC 400 mA VCB 55 V VCE 30 V PDISS 3.5 W @ TC = 25 OC TJ -65 to +200 OC 1 = Emitter 2

 9.3. Size:47K  semicoa
 2n5109.pdf pdf_icon

2N5100

Data Sheet No. 2N5109 Generic Part Number Type 2N5109 2N5109 Geometry 1007 Polarity NPN REF MIL-PRF-19500/453 Qual Level JAN - JANTXV Features VHF-UHF amplifier silicon transis- tor. Housed in TO-39 case. Also available in chip form using the 1007 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/398 which TO-39 Semicoa meets in all cases. M

 9.4. Size:188K  inchange semiconductor
 2n5108.pdf pdf_icon

2N5100

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N5108 DESCRIPTION High Current-Gain Bandwidth Product f = 1200MHz (Min) @V = 10V,I = 50mA T CE E Low Saturation Voltage Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose Class C amplifier applications up to 1 GHz ABS

MOSTRAR MÁS

Otros transistores... 2N5094, 2N5095, 2N5096, 2N5097, 2N5097S, 2N5098, 2N5099, 2N51, BD139, 2N5101, 2N5102, 2N5106, 2N5107, 2N5108, 2N5108A, 2N5109, 2N5109A