2N5109B . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N5109B
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 2.5 W
Tensión colector-base (Vcb): 40 V
Tensión colector-emisor (Vce): 20 V
Tensión emisor-base (Veb): 3 V
Corriente del colector DC máxima (Ic): 0.4 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 800 MHz
Capacitancia de salida (Cc): 3.5 pF
Ganancia de corriente contínua (hfe): 25
Paquete / Cubierta: TO5
Búsqueda de reemplazo de transistor bipolar 2N5109B
2N5109B Datasheet (PDF)
2n5109.pdf
2N5109www.centralsemi.comSILICONDESCRIPTION:NPN RF TRANSISTORThe CENTRAL SEMICONDUCTOR 2N5109 is a Silicon NPN Epitaxial Planar RF Transistor mounted in a hermetically sealed package designed for high frequency amplifier applications.MARKING: FULL PART NUMBERTO-39 CASEMAXIMUM RATINGS: (TA=25C unless otherwise noted) SYMBOL UNITSCollector-Base Voltage VCBO 40 VColle
2n5109.pdf
Data Sheet No. 2N5109Generic Part Number:Type 2N51092N5109Geometry 1007Polarity NPNREF: MIL-PRF-19500/453Qual Level: JAN - JANTXVFeatures: VHF-UHF amplifier silicon transis-tor. Housed in TO-39 case. Also available in chip form usingthe 1007 chip geometry. The Min and Max limits shown areper MIL-PRF-19500/398 whichTO-39Semicoa meets in all cases.M
2n5109.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2N5109DESCRIPTIONHigh Current-Gain Bandwidth Product: f = 1200MHz (Min) @V = 10V,I = 50mAT CE ELow Saturation VoltageGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose Class C amplifier applicationsup to 1 GHzABS
Otros transistores... 2N5101 , 2N5102 , 2N5106 , 2N5107 , 2N5108 , 2N5108A , 2N5109 , 2N5109A , TIP42C , 2N5109UB , 2N511 , 2N5110 , 2N5111 , 2N5112 , 2N5113 , 2N5117 , 2N5118 .
