2N5109B Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N5109B
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 2.5 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.4 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 800 MHz
Collector Capacitance (Cc): 3.5 pF
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: TO5
2N5109B Transistor Equivalent Substitute - Cross-Reference Search
2N5109B Datasheet (PDF)
2n5109.pdf
2N5109www.centralsemi.comSILICONDESCRIPTION:NPN RF TRANSISTORThe CENTRAL SEMICONDUCTOR 2N5109 is a Silicon NPN Epitaxial Planar RF Transistor mounted in a hermetically sealed package designed for high frequency amplifier applications.MARKING: FULL PART NUMBERTO-39 CASEMAXIMUM RATINGS: (TA=25C unless otherwise noted) SYMBOL UNITSCollector-Base Voltage VCBO 40 VColle
2n5109.pdf
Data Sheet No. 2N5109Generic Part Number:Type 2N51092N5109Geometry 1007Polarity NPNREF: MIL-PRF-19500/453Qual Level: JAN - JANTXVFeatures: VHF-UHF amplifier silicon transis-tor. Housed in TO-39 case. Also available in chip form usingthe 1007 chip geometry. The Min and Max limits shown areper MIL-PRF-19500/398 whichTO-39Semicoa meets in all cases.M
2n5109.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2N5109DESCRIPTIONHigh Current-Gain Bandwidth Product: f = 1200MHz (Min) @V = 10V,I = 50mAT CE ELow Saturation VoltageGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose Class C amplifier applicationsup to 1 GHzABS
Datasheet: 2N5101 , 2N5102 , 2N5106 , 2N5107 , 2N5108 , 2N5108A , 2N5109 , 2N5109A , A1015 , 2N5109UB , 2N511 , 2N5110 , 2N5111 , 2N5112 , 2N5113 , 2N5117 , 2N5118 .
