2N5109B Specs and Replacement
Type Designator: 2N5109B
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 2.5 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.4 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 800 MHz
Collector Capacitance (Cc): 3.5 pF
Forward Current Transfer Ratio (hFE), MIN: 25
Package: TO5
2N5109B Substitution
- BJT ⓘ Cross-Reference Search
2N5109B datasheet
2N5109 www.centralsemi.com SILICON DESCRIPTION NPN RF TRANSISTOR The CENTRAL SEMICONDUCTOR 2N5109 is a Silicon NPN Epitaxial Planar RF Transistor mounted in a hermetically sealed package designed for high frequency amplifier applications. MARKING FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS (TA=25 C unless otherwise noted) SYMBOL UNITS Collector-Base Voltage VCBO 40 V Colle... See More ⇒
Data Sheet No. 2N5109 Generic Part Number Type 2N5109 2N5109 Geometry 1007 Polarity NPN REF MIL-PRF-19500/453 Qual Level JAN - JANTXV Features VHF-UHF amplifier silicon transis- tor. Housed in TO-39 case. Also available in chip form using the 1007 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/398 which TO-39 Semicoa meets in all cases. M... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N5109 DESCRIPTION High Current-Gain Bandwidth Product f = 1200MHz (Min) @V = 10V,I = 50mA T CE E Low Saturation Voltage Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose Class C amplifier applications up to 1 GHz ABS... See More ⇒
Detailed specifications: 2N5101, 2N5102, 2N5106, 2N5107, 2N5108, 2N5108A, 2N5109, 2N5109A, TIP41, 2N5109UB, 2N511, 2N5110, 2N5111, 2N5112, 2N5113, 2N5117, 2N5118
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