RCS258 Todos los transistores

 

RCS258 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RCS258
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 250 W
   Tensión colector-base (Vcb): 100 V
   Tensión colector-emisor (Vce): 60 V
   Tensión emisor-base (Veb): 7 V
   Corriente del colector DC máxima (Ic): 30 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 0.2 MHz
   Ganancia de corriente contínua (hfe): 15
   Paquete / Cubierta: TO3

 Búsqueda de reemplazo de transistor bipolar RCS258

 

RCS258 Datasheet (PDF)

 9.1. Size:2502K  blue-rocket-elect
brcs250c03mf.pdf

RCS258
RCS258

BRCS250C03MF Rev.A Mar.-2023 DATA SHEET / Descriptions SOT23-6 Complementary Enhancement MOSFET in a SOT23-6 Plastic Package / Features N-channel P-channel VDS(V)=30V VDS(V)=-30V ID=5.5A ID=-4.0A R DS(ON)@-10V

 9.2. Size:1129K  blue-rocket-elect
brcs250n10syb.pdf

RCS258
RCS258

BRCS250N10SYB Rev.A Jun.-2022 DATA SHEET / Descriptions PDFN 33A-8L N MOS N-Channel Enhancement Mode Field Effect Transistor in a PDFN 33A-8L Plastic Package. / Features VDS (V) = 100V ID =22A (VGS = 20V) RDS(ON)@10V25mR(Typ.20mR) HF Product. / Applications DC/DC AC/DC

 9.3. Size:1431K  blue-rocket-elect
brcs250c03ya.pdf

RCS258
RCS258

BRCS250C03YA Rev.A Nov.-2021 DATA SHEET / Descriptions PDFN33-8L MOS ComplementaryEnhancementMOSFETinaPDFN33-8LPlasticPackage. / Features N-channel P-channel VDS(V)=30V VDS(V)=-30V ID=20A ID=-12A RDS(ON)

 9.4. Size:915K  blue-rocket-elect
brcs250n03ya.pdf

RCS258
RCS258

BRCS250N03YA Rev.A Feb.-2022 DATA SHEET / Descriptions PDFN33-8L N MOS DoubleN-CHANNELMOSFETinaPDFN33-8LPlasticPackage. / Features N-channel VDS(V)=30V ID=20A RDS(ON)

 9.5. Size:2434K  blue-rocket-elect
brcs25n60ph.pdf

RCS258
RCS258

BRCS25N60PH Rev.A Mar.-2020 DATA SHEET / Descriptions N TO-3PH N-Channel MOSFET in a TO-3PH Plastic Package. / Features Crss (85pF)dv/dt Low gate charge, Low Crss (typical 85pF ), Fast switching, 100% avalanche tested,Improved dv/dt

 9.6. Size:1365K  blue-rocket-elect
brcs250n03dmf.pdf

RCS258
RCS258

BRCS250N03DMF Rev.A Nov.-2021 DATA SHEET / Descriptions SOT23-6 N MOS Dual N-Channel MOSFET in a SOT23-6 Plastic Package. / Features Super high dense cell design for low R ,Rugged and reliable,HF product. DS(ON) / Applications

 9.7. Size:1393K  blue-rocket-elect
brcs250n03dsc.pdf

RCS258
RCS258

BRCS250N03DSC Rev.A Jun.-2023 DATA SHEET / Descriptions SOP-8 N MOS Double N-CHANNEL MOSFET in a SOP-8 Plastic Package. / Features V (V)=30V I =7.5A DS DRDS(ON)@10V

 9.8. Size:2335K  blue-rocket-elect
brcs250n10sip.pdf

RCS258
RCS258

BRCS250N10SIP Rev.A Oct.-2023 DATA SHEET / Descriptions TO-251 N N-CHANNEL MOSFET in a TO-251 Plastic Package. / Features V (V) = 100V I =37A (V = 20V) DS D GS RDS(ON)@10V25mR(Typ.20mR) RDS(ON)@4.5V35mR(Typ.25mR) HF Product. / Applications LED

 9.9. Size:2301K  blue-rocket-elect
brcs250n10sdp.pdf

RCS258
RCS258

BRCS250N10SDP Rev.A Jun.-2023 DATA SHEET / Descriptions TO-252 N N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features V (V) = 100V I =37A (V = 20V) DS D GS RDS(ON)@10V25mR(Typ.20mR) RDS(ON)@4.5V35mR(Typ.25mR) HF Product. / Applications LED

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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