SD1893F Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SD1893F

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.8 W

Tensión colector-base (Vcb): 120 V

Tensión colector-emisor (Vce): 80 V

Tensión emisor-base (Veb): 7 V

Corriente del colector DC máxima (Ic): 0.5 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 50 MHz

Capacitancia de salida (Cc): 15 pF

Ganancia de corriente contínua (hFE): 40

Encapsulados: LCC2

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SD1893F datasheet

 8.1. Size:42K  st
 sd1893.pdf pdf_icon

SD1893F

SD1893-03 RF & MICROWAVE TRANSISTORS 1.6 GHZ SATCOM APPLICATIONS .1.65 GHz .28 VOLTS .OVERLAY DIE GEOMETRY .GOLD METALLIZATION .HIGH RELIABILITY AND RUGGEDNESS .P 10 W MIN. WITH 11.0 dB GAIN = OUT .COMMON BASE .230 2LFL (M151) hermetically sealed ORDER CODE BRANDING SD1893-03 1893-3 PIN CONNECTION DESCRIPTION The SD1893-03 is a 28 V silicon NPN planar tran- sistor designed fo

 8.2. Size:54K  panasonic
 2sd1893.pdf pdf_icon

SD1893F

Power Transistors 2SD1893 Silicon NPN triple diffusion planar type Darlington For power amplification Unit mm Complementary to 2SB1253 15.0 0.3 5.0 0.2 11.0 0.2 3.2 Features Optimum for 40W HiFi output 3.2 0.1 High foward current transfer ratio hFE 5000 to 30000 Low collector to emitter saturation voltage VCE(sat)

 8.3. Size:217K  inchange semiconductor
 2sd1893.pdf pdf_icon

SD1893F

isc Silicon NPN Darlington Power Transistor 2SD1893 DESCRIPTION High DC Current Gain- h = 5000(Min)@I = 5A FE C Low-Collector Saturation Voltage- V = 2.5V(Max.)@I = 5A CE(sat) C Complement to Type 2SB1253 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS(T

MOSTRAR MÁS

Otros transistores... SC258VI, SC259, SC259A, SC259B, SC4010, SC4244, SD109, SD1893, BC639, SD2222A, SD2222AF, SD2857, SD2857F, SD2904A, SD2904AF, SD2907A, SD2907AF