SD1893F Datasheet, Equivalent, Cross Reference Search
Type Designator: SD1893F
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.8 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 15 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: LCC2
SD1893F Transistor Equivalent Substitute - Cross-Reference Search
SD1893F Datasheet (PDF)
sd1893.pdf
SD1893-03RF & MICROWAVE TRANSISTORS1.6 GHZ SATCOM APPLICATIONS.1.65 GHz.28 VOLTS.OVERLAY DIE GEOMETRY.GOLD METALLIZATION.HIGH RELIABILITY AND RUGGEDNESS.P 10 W MIN. WITH 11.0 dB GAIN=OUT.COMMON BASE.230 2LFL (M151)hermetically sealedORDER CODE BRANDINGSD1893-03 1893-3PIN CONNECTIONDESCRIPTIONThe SD1893-03 is a 28 V silicon NPN planar tran-sistor designed fo
2sd1893.pdf
Power Transistors2SD1893Silicon NPN triple diffusion planar type DarlingtonFor power amplificationUnit: mmComplementary to 2SB125315.0 0.3 5.0 0.211.0 0.2 3.2FeaturesOptimum for 40W HiFi output 3.2 0.1High foward current transfer ratio hFE: 5000 to 30000Low collector to emitter saturation voltage VCE(sat):
2sd1893.pdf
isc Silicon NPN Darlington Power Transistor 2SD1893DESCRIPTIONHigh DC Current Gain-: h = 5000(Min)@I = 5AFE CLow-Collector Saturation Voltage-: V = 2.5V(Max.)@I = 5ACE(sat) CComplement to Type 2SB1253Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , BC557 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
