All Transistors. SD1893F Datasheet

 

SD1893F Datasheet and Replacement


   Type Designator: SD1893F
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.8 W
   Maximum Collector-Base Voltage |Vcb|: 120 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 50 MHz
   Collector Capacitance (Cc): 15 pF
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: LCC2
 

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SD1893F Datasheet (PDF)

 8.1. Size:42K  st
 sd1893.pdf pdf_icon

SD1893F

SD1893-03RF & MICROWAVE TRANSISTORS1.6 GHZ SATCOM APPLICATIONS.1.65 GHz.28 VOLTS.OVERLAY DIE GEOMETRY.GOLD METALLIZATION.HIGH RELIABILITY AND RUGGEDNESS.P 10 W MIN. WITH 11.0 dB GAIN=OUT.COMMON BASE.230 2LFL (M151)hermetically sealedORDER CODE BRANDINGSD1893-03 1893-3PIN CONNECTIONDESCRIPTIONThe SD1893-03 is a 28 V silicon NPN planar tran-sistor designed fo

 8.2. Size:54K  panasonic
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SD1893F

Power Transistors2SD1893Silicon NPN triple diffusion planar type DarlingtonFor power amplificationUnit: mmComplementary to 2SB125315.0 0.3 5.0 0.211.0 0.2 3.2FeaturesOptimum for 40W HiFi output 3.2 0.1High foward current transfer ratio hFE: 5000 to 30000Low collector to emitter saturation voltage VCE(sat):

 8.3. Size:217K  inchange semiconductor
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SD1893F

isc Silicon NPN Darlington Power Transistor 2SD1893DESCRIPTIONHigh DC Current Gain-: h = 5000(Min)@I = 5AFE CLow-Collector Saturation Voltage-: V = 2.5V(Max.)@I = 5ACE(sat) CComplement to Type 2SB1253Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T

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Datasheet: SC258VI , SC259 , SC259A , SC259B , SC4010 , SC4244 , SD109 , SD1893 , 2SA1015 , SD2222A , SD2222AF , SD2857 , SD2857F , SD2904A , SD2904AF , SD2907A , SD2907AF .

History: 2SB54 | CL151-4C | GES2907R | 2SD696A | DTB143EK | KTC3544T | 2SD696

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