SE6010 . Datasheet. Equivalente. Reemplazo. Todos los transistores. Hoja de especificaciones. Principales características

SE6010 Datasheet (PDF)

9.1. Size:704K cn sino-ic
se60120gts.pdf pdf_icon

Dec 2014SE60120GTSN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThis type used advanced trench technology and For a single MOSFETdesign to provide excellent R with low gateDS(ON) V = 60VDScharge. R = 3.0m @ V =10VDS(ON) GS High density cell design for ultra low RDS(ON) Excellent package for good heat dissipationPin configura

9.2. Size:509K cn sino-ic
se60120b.pdf pdf_icon

Dec 2014SE60120BN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThis type used advanced trench technology and For a single MOSFETdesign to provide excellent R with low gateDS(ON) V =60VDScharge. R =4.1m @V =10VDS(ON) GS High density cell design for ultra low RDS(ON) Excellent package for good heat dissipationPin configuration

9.3. Size:461K cn sino-ic
se6016b.pdf pdf_icon

SE6016BN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThigh Density Cell Design For Ultra Low For a single MOSFETOn-Resistance Fully Characterized Avalanche V =60VDSVoltage and Current Improved Shoot-Through R =23m @V =10VDS(ON) GSFOM Simple Drive Requirement Small Package Outline Surface Mount DevicePin configurationsSe

Otros transistores... SE5050 , SE5051 , SE5052 , SE5055 , SE5-0854 , SE5-567 , SE6001 , SE6002 , NJW0281G , SE6020 , SE6021 , SE6022 , SE6023 , SE6062 , SE6063 , SE6562 , SE6563 .