SE6010 Specs and Replacement
Type Designator: SE6010
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Collector Current |Ic max|: 0.4 A
Max. Operating Junction Temperature (Tj): 125 °C
Electrical Characteristics
Transition Frequency (ft): 250M MHz
Collector Capacitance (Cc): 8 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO106
SE6010 Substitution
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SE6010 datasheet
Dec 2014 SE60120GTS N-Channel Enhancement-Mode MOSFET Revision A General Description Features This type used advanced trench technology and For a single MOSFET design to provide excellent R with low gate DS(ON) V = 60V DS charge. R = 3.0m @ V =10V DS(ON) GS High density cell design for ultra low R DS(ON) Excellent package for good heat dissipation Pin configura... See More ⇒
Dec 2014 SE60120B N-Channel Enhancement-Mode MOSFET Revision A General Description Features This type used advanced trench technology and For a single MOSFET design to provide excellent R with low gate DS(ON) V =60V DS charge. R =4.1m @V =10V DS(ON) GS High density cell design for ultra low R DS(ON) Excellent package for good heat dissipation Pin configuration... See More ⇒
SE6016B N-Channel Enhancement-Mode MOSFET Revision A General Description Features Thigh Density Cell Design For Ultra Low For a single MOSFET On-Resistance Fully Characterized Avalanche V =60V DS Voltage and Current Improved Shoot-Through R =23m @V =10V DS(ON) GS FOM Simple Drive Requirement Small Package Outline Surface Mount Device Pin configurations Se... See More ⇒
Detailed specifications: SE5050, SE5051, SE5052, SE5055, SE5-0854, SE5-567, SE6001, SE6002, D965, SE6020, SE6021, SE6022, SE6023, SE6062, SE6063, SE6562, SE6563
Keywords - SE6010 pdf specs
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