SE6020 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SE6020

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.3 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 60 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 1 A

Temperatura operativa máxima (Tj): 125 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 250M MHz

Capacitancia de salida (Cc): 15 pF

Ganancia de corriente contínua (hFE): 100

Encapsulados: TO106

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SE6020 datasheet

 0.1. Size:466K  cn sino-ic
 se6020b.pdf pdf_icon

SE6020

SE6020B N-Channel Enhancement-Mode MOSFET Revision A General Description Features Thigh Density Cell Design For Ultra Low For a single MOSFET On-Resistance Fully Characterized Avalanche V =60V DS Voltage and Current Improved Shoot-Through R =14m @V =10V DS(ON) GS FOM Simple Drive Requirement Small Package Outline Surface Mount Device Pin configurations Se

 0.2. Size:466K  cn sino-ic
 se6020db.pdf pdf_icon

SE6020

SE6020DB N-Channel Enhancement-Mode MOSFET Revision A General Description Features Thigh Density Cell Design For Ultra Low For a single MOSFET On-Resistance Fully Characterized Avalanche V =60V DS Voltage and Current Improved Shoot-Through R =24m @V =10V DS(ON) GS FOM Simple Drive Requirement Small Package Outline Surface Mount Device Pin configurations S

 9.1. Size:368K  cn sino-ic
 se60210ga.pdf pdf_icon

SE6020

Dec 2014 SE60210GA N-Channel Enhancement-Mode MOSFET Revision A General Description Features This type used advanced trench technology and For a single MOSFET design to provide excellent RDS(ON) with low gate VDS = 60V charge. RDS(ON) = 2.2m @ VGS=10V High density cell design for ultra low R DS(ON) Excellent package for good heat dissipation Pin configurations

Otros transistores... SE5051, SE5052, SE5055, SE5-0854, SE5-567, SE6001, SE6002, SE6010, 2SD669A, SE6021, SE6022, SE6023, SE6062, SE6063, SE6562, SE6563, SE7005