SE6020 Specs and Replacement
Type Designator: SE6020
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 125 °C
Electrical Characteristics
Transition Frequency (ft): 250M MHz
Collector Capacitance (Cc): 15 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Package: TO106
SE6020 Substitution
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SE6020 datasheet
SE6020B N-Channel Enhancement-Mode MOSFET Revision A General Description Features Thigh Density Cell Design For Ultra Low For a single MOSFET On-Resistance Fully Characterized Avalanche V =60V DS Voltage and Current Improved Shoot-Through R =14m @V =10V DS(ON) GS FOM Simple Drive Requirement Small Package Outline Surface Mount Device Pin configurations Se... See More ⇒
SE6020DB N-Channel Enhancement-Mode MOSFET Revision A General Description Features Thigh Density Cell Design For Ultra Low For a single MOSFET On-Resistance Fully Characterized Avalanche V =60V DS Voltage and Current Improved Shoot-Through R =24m @V =10V DS(ON) GS FOM Simple Drive Requirement Small Package Outline Surface Mount Device Pin configurations S... See More ⇒
Dec 2014 SE60210GA N-Channel Enhancement-Mode MOSFET Revision A General Description Features This type used advanced trench technology and For a single MOSFET design to provide excellent RDS(ON) with low gate VDS = 60V charge. RDS(ON) = 2.2m @ VGS=10V High density cell design for ultra low R DS(ON) Excellent package for good heat dissipation Pin configurations ... See More ⇒
Detailed specifications: SE5051, SE5052, SE5055, SE5-0854, SE5-567, SE6001, SE6002, SE6010, 2SD669A, SE6021, SE6022, SE6023, SE6062, SE6063, SE6562, SE6563, SE7005
Keywords - SE6020 pdf specs
SE6020 cross reference
SE6020 equivalent finder
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