SGSF321 Todos los transistores

 

SGSF321 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SGSF321
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 70 W
   Tensión colector-base (Vcb): 850 V
   Tensión colector-emisor (Vce): 400 V
   Corriente del colector DC máxima (Ic): 5 A
   Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Paquete / Cubierta: TO220

 Búsqueda de reemplazo de transistor bipolar SGSF321

 

SGSF321 Datasheet (PDF)

 8.1. Size:85K  st
sgsf324.pdf

SGSF321
SGSF321

SGSF324HIGH VOLTAGE FASTSWITCHING NPNPOWER TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY VERY HIGH SWITCHING SPEEDAPPLICATIONS: SWITCH MODE POWER SUPPLIESDESCRIPTION32The SGSF324 is manufactured using1Multiepitaxial Mesa technology for cost-effectivehigh performance and uses a Hollow EmitterTO-220structure to enhance switchin

 9.1. Size:82K  st
sgsf344.pdf

SGSF321
SGSF321

SGSF344HIGH VOLTAGE FASTSWITCHING NPNPOWER TRANSISTOR HIGH VOLTAGE CAPABILITY VERY HIGH SWITCHING SPEED LOW BASE-DRIVE REQUIREMENTSAPPLICATIONS: SWITCH MODE POWER SUPPLIES HORIZONTAL DEFLECTION FOR COLOURTVS AND MONITORS32DESCRIPTION1The SGSF344 is manufactured usingMultiepitaxial Mesa technology for cost-effectiveTO-220high performance and uses a Hollow Emitte

 9.2. Size:90K  st
sgsf313.pdf

SGSF321
SGSF321

SGSF313SGSF313PIHIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTORS HIGH VOLTAGE CAPABILITY (450V VCEO) VERY HIGH SWITCHING SPEED: t = 35nsfTYPICAL AT IC = 2.5A, IB1 = 0.5A, VBEoff = -5V LOW SATURATION VOLTAGEo COMPLETE CHARACTERIZATION AT 100 C U.L. RECOGNISED ISOWATT220 PACKAGE(U.L. FILE # E81734 (N)).APPLICATION 3 32 2 SWITCH MODE POWER SUPPLIES11 FLYBACK AND

 9.3. Size:151K  inchange semiconductor
sgsf313pi.pdf

SGSF321
SGSF321

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor SGSF313PI DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V(Min) High Switching Speed Low Saturation Voltage APPLICATIONS Designed to be used as switch in high efficency off-line (220V mains) switching power supplies for consumer applications like sets VCRs and mon

 9.4. Size:111K  inchange semiconductor
sgsf313.pdf

SGSF321
SGSF321

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor SGSF313 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V(Min) High Switching Speed Low Saturation Voltage APPLICATIONS Designed to be used as switch in high efficency off-line (220V mains) switching power supplies for consumer applications like sets VCRs and monit

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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