Справочник транзисторов. SGSF321

 

Биполярный транзистор SGSF321 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: SGSF321
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 70 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 850 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 400 V
   Макcимальный постоянный ток коллектора (Ic): 5 A
   Предельная температура PN-перехода (Tj): 175 °C
   Корпус транзистора: TO220

 Аналоги (замена) для SGSF321

 

 

SGSF321 Datasheet (PDF)

 8.1. Size:85K  st
sgsf324.pdf

SGSF321
SGSF321

SGSF324HIGH VOLTAGE FASTSWITCHING NPNPOWER TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY VERY HIGH SWITCHING SPEEDAPPLICATIONS: SWITCH MODE POWER SUPPLIESDESCRIPTION32The SGSF324 is manufactured using1Multiepitaxial Mesa technology for cost-effectivehigh performance and uses a Hollow EmitterTO-220structure to enhance switchin

 9.1. Size:82K  st
sgsf344.pdf

SGSF321
SGSF321

SGSF344HIGH VOLTAGE FASTSWITCHING NPNPOWER TRANSISTOR HIGH VOLTAGE CAPABILITY VERY HIGH SWITCHING SPEED LOW BASE-DRIVE REQUIREMENTSAPPLICATIONS: SWITCH MODE POWER SUPPLIES HORIZONTAL DEFLECTION FOR COLOURTVS AND MONITORS32DESCRIPTION1The SGSF344 is manufactured usingMultiepitaxial Mesa technology for cost-effectiveTO-220high performance and uses a Hollow Emitte

 9.2. Size:90K  st
sgsf313.pdf

SGSF321
SGSF321

SGSF313SGSF313PIHIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTORS HIGH VOLTAGE CAPABILITY (450V VCEO) VERY HIGH SWITCHING SPEED: t = 35nsfTYPICAL AT IC = 2.5A, IB1 = 0.5A, VBEoff = -5V LOW SATURATION VOLTAGEo COMPLETE CHARACTERIZATION AT 100 C U.L. RECOGNISED ISOWATT220 PACKAGE(U.L. FILE # E81734 (N)).APPLICATION 3 32 2 SWITCH MODE POWER SUPPLIES11 FLYBACK AND

 9.3. Size:151K  inchange semiconductor
sgsf313pi.pdf

SGSF321
SGSF321

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor SGSF313PI DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V(Min) High Switching Speed Low Saturation Voltage APPLICATIONS Designed to be used as switch in high efficency off-line (220V mains) switching power supplies for consumer applications like sets VCRs and mon

 9.4. Size:111K  inchange semiconductor
sgsf313.pdf

SGSF321
SGSF321

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor SGSF313 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V(Min) High Switching Speed Low Saturation Voltage APPLICATIONS Designed to be used as switch in high efficency off-line (220V mains) switching power supplies for consumer applications like sets VCRs and monit

Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
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