SK3003 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SK3003
Material: Ge
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15 W
Tensión colector-base (Vcb): 20 V
Tensión colector-emisor (Vce): 18 V
Tensión emisor-base (Veb): 2 V
Corriente del colector DC máxima (Ic): 0.5 A
Temperatura operativa máxima (Tj): 85 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 0.5 MHz
Capacitancia de salida (Cc): 90 pF
Ganancia de corriente contínua (hfe): 90
Paquete / Cubierta: TO1
Búsqueda de reemplazo de transistor bipolar SK3003
SK3003 Datasheet (PDF)
2sk3003.pdf
2SK3003External dimensions 1 ...... FM20Absolute Maximum Ratings Electrical Characteristics (Ta = 25C) (Ta = 25C)RatingsSymbol Ratings Unit Symbol Unit Conditionsmin typ maxV 200 V I = 100A, V = 0V(BR) DSS D GS V 200 VDSSI 100 nA V = 20VGSS GS V 20 VGSSI 100 A V = 200V, V = 0VDSS DS GS I 18 ADV 2.0 4.0 V V = 10V, I = 1mATH DS D I 72
2sk3003.pdf
isc N-Channel MOSFET Transistor 2SK3003FEATURESDrain Current I = 18A@ T =25D CDrain Source Voltage-: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 0.175(Max) 100% avalanche testedDS(on)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
2sk3000.pdf
2SK3000Silicon N Channel MOS FETLow Frequency Power SwitchingREJ03G0379-0300Z(Previous ADE-208-585A (Z))Rev.3.00Jun.15.2004Features Low on-resistanceRDS(on) = 0.16 typ. (VGS = 10 V, ID = 450 mA) 4 V gate drive devices. Small package (MPAK) Expansive drain to source surge power capabilityOutlineMPAKD332 1. SourceG2. Gate13. Drain2
3sk300.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
rej03g0379 2sk3000.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
2sk3004.pdf
2SK3004External dimensions 1 ...... FM20Absolute Maximum Ratings Electrical Characteristics (Ta = 25C) (Ta = 25C)RatingsSymbol Ratings Unit Symbol Unit Conditionsmin typ maxV 250 V I = 100A, V = 0V(BR)DSS D GS V 250 VDSSI 100 nA V = 20VGSS GS V 20 VGSSI 100 A V = 250V, V = 0VDSS DS GS I 18 ADV 2.0 4.0 V V = 10V, I = 1mATH DS D I 72 A
2sk3009ls.pdf
isc N-Channel MOSFET Transistor 2SK3009LSFEATURESDrain Current : I = 8A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 1.2(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
2sk3004.pdf
isc N-Channel MOSFET Transistor 2SK3004FEATURESDrain Current I = 18A@ T =25D CDrain Source Voltage-: V = 250V(Min)DSSStatic Drain-Source On-Resistance: R = 0.25(Max) 100% avalanche testedDS(on)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos
2sk3009b.pdf
isc N-Channel MOSFET Transistor 2SK3009BFEATURESDrain Current : I = 8A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 1.2(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
2sk3009p.pdf
isc N-Channel MOSFET Transistor 2SK3009PFEATURESDrain Current : I = 8A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 1.2(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
