SK3003. Аналоги и основные параметры
Наименование производителя: SK3003
Тип материала: Ge
Полярность: PNP
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.15 W
Макcимально допустимое напряжение коллектор-база (Ucb): 20 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 18 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 2 V
Макcимальный постоянный ток коллектора (Ic): 0.5 A
Предельная температура PN-перехода (Tj): 85 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 0.5 MHz
Ёмкость коллекторного перехода (Cc): 90 pf
Статический коэффициент передачи тока (hFE): 90
Корпус транзистора: TO1
Аналоги (замена) для SK3003
- подборⓘ биполярного транзистора по параметрам
SK3003 даташит
0.1. Size:33K sanken-ele
2sk3003.pdf 

2SK3003 External dimensions 1 ...... FM20 Absolute Maximum Ratings Electrical Characteristics (Ta = 25 C) (Ta = 25 C) Ratings Symbol Ratings Unit Symbol Unit Conditions min typ max V 200 V I = 100 A, V = 0V (BR) DSS D GS V 200 V DSS I 100 nA V = 20V GSS GS V 20 V GSS I 100 A V = 200V, V = 0V DSS DS GS I 18 A D V 2.0 4.0 V V = 10V, I = 1mA TH DS D I 72
0.2. Size:252K inchange semiconductor
2sk3003.pdf 

isc N-Channel MOSFET Transistor 2SK3003 FEATURES Drain Current I = 18A@ T =25 D C Drain Source Voltage- V = 200V(Min) DSS Static Drain-Source On-Resistance R = 0.175 (Max) 100% avalanche tested DS(on) Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo
9.2. Size:119K renesas
2sk3000.pdf 

2SK3000 Silicon N Channel MOS FET Low Frequency Power Switching REJ03G0379-0300Z (Previous ADE-208-585A (Z)) Rev.3.00 Jun.15.2004 Features Low on-resistance RDS(on) = 0.16 typ. (VGS = 10 V, ID = 450 mA) 4 V gate drive devices. Small package (MPAK) Expansive drain to source surge power capability Outline MPAK D 3 3 2 1. Source G 2. Gate 1 3. Drain 2
9.3. Size:276K renesas
3sk300.pdf 

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
9.4. Size:132K renesas
rej03g0379 2sk3000.pdf 

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
9.5. Size:43K sanken-ele
2sk3004.pdf 

2SK3004 External dimensions 1 ...... FM20 Absolute Maximum Ratings Electrical Characteristics (Ta = 25 C) (Ta = 25 C) Ratings Symbol Ratings Unit Symbol Unit Conditions min typ max V 250 V I = 100 A, V = 0V (BR)DSS D GS V 250 V DSS I 100 nA V = 20V GSS GS V 20 V GSS I 100 A V = 250V, V = 0V DSS DS GS I 18 A D V 2.0 4.0 V V = 10V, I = 1mA TH DS D I 72 A
9.6. Size:279K inchange semiconductor
2sk3009ls.pdf 

isc N-Channel MOSFET Transistor 2SK3009LS FEATURES Drain Current I = 8A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 1.2 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid
9.7. Size:252K inchange semiconductor
2sk3004.pdf 

isc N-Channel MOSFET Transistor 2SK3004 FEATURES Drain Current I = 18A@ T =25 D C Drain Source Voltage- V = 250V(Min) DSS Static Drain-Source On-Resistance R = 0.25 (Max) 100% avalanche tested DS(on) Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos
9.8. Size:357K inchange semiconductor
2sk3009b.pdf 

isc N-Channel MOSFET Transistor 2SK3009B FEATURES Drain Current I = 8A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 1.2 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid
9.9. Size:289K inchange semiconductor
2sk3009p.pdf 

isc N-Channel MOSFET Transistor 2SK3009P FEATURES Drain Current I = 8A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 1.2 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid
Другие транзисторы: SGSIF463, SGSIF464, SGSIF465, SHA7530, SHA7534, SK1639, SK1641, SK2604A, 2N2222, SK3010, SK3011, SK3012, SK3026, SK3040, SK3054, SK3114, SK3137