SK5801 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SK5801

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.36 W

Tensión colector-base (Vcb): 40 V

Tensión colector-emisor (Vce): 30 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 250 MHz

Capacitancia de salida (Cc): 8 pF

Ganancia de corriente contínua (hFE): 60

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SK5801 datasheet

 9.1. Size:49K  hitachi
 2sk579 2sk580.pdf pdf_icon

SK5801

 9.2. Size:354K  inchange semiconductor
 2sk580l.pdf pdf_icon

SK5801

isc N-Channel MOSFET Transistor 2SK580L FEATURES Drain Current I = 1.5A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 6.0 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

 9.3. Size:286K  inchange semiconductor
 2sk580s.pdf pdf_icon

SK5801

isc N-Channel MOSFET Transistor 2SK580S FEATURES Drain Current I = 1.5A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 6.0 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

Otros transistores... SK3247, SK3260, SK3270, SK3356, SK3441, SK3511, SK3538, SK3623, 13009, SK6346, SM1258, SM1259, SM2159, SM2160, SM2160P, SM2164, SM2165