SK5801 Specs and Replacement

Type Designator: SK5801

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.36 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 250 MHz

Collector Capacitance (Cc): 8 pF

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

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SK5801 datasheet

 9.1. Size:49K  hitachi

 2sk579 2sk580.pdf pdf_icon

SK5801

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 9.2. Size:354K  inchange semiconductor

 2sk580l.pdf pdf_icon

SK5801

isc N-Channel MOSFET Transistor 2SK580L FEATURES Drain Current I = 1.5A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 6.0 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno... See More ⇒

 9.3. Size:286K  inchange semiconductor

 2sk580s.pdf pdf_icon

SK5801

isc N-Channel MOSFET Transistor 2SK580S FEATURES Drain Current I = 1.5A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 6.0 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno... See More ⇒

Detailed specifications: SK3247, SK3260, SK3270, SK3356, SK3441, SK3511, SK3538, SK3623, 13009, SK6346, SM1258, SM1259, SM2159, SM2160, SM2160P, SM2164, SM2165

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