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SS9012 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SS9012
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.625 W
   Tensión colector-base (Vcb): 40 V
   Tensión colector-emisor (Vce): 20 V
   Corriente del colector DC máxima (Ic): 0.5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 64
   Paquete / Cubierta: TO92

 Búsqueda de reemplazo de transistor bipolar SS9012

 

SS9012 Datasheet (PDF)

 ..1. Size:35K  fairchild semi
ss9012.pdf

SS9012
SS9012

SS90121W Output Amplifier of Potable Radios in Class B Push-pull Operation. High total power dissipation. (PT=625mW) High Collector Current. (IC= -500mA) Complementary to SS9013 Excellent hFE linearity.TO-9211. Emitter 2. Base 3. CollectorPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsV

 ..2. Size:46K  samsung
ss9012.pdf

SS9012
SS9012

SS9012 PNP EPITAXIAL SILICON TRANSISTOR1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASSTO-92B PUSH-PULL OPERATION. High total power dissipation. (PT=625mW) High Collector Current. (IC= -500mA) Complementary to SS9013 Excelent hFE linearity.ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitVCollector-Base Voltage VCBO -40VCollector-Emitter

 9.1. Size:38K  fairchild semi
ss9014.pdf

SS9012
SS9012

SS9014Pre-Amplifier, Low Level & Low Noise High total power dissipation. (PT=450mW) High hFE and good linearity Complementary to SS9015TO-9211. Emitter 2. Base 3. CollectorNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage 50 VVCEO Collector-Emitter Voltage 45 VVEBO

 9.2. Size:40K  fairchild semi
ss9018.pdf

SS9012
SS9012

SS9018AM/FM Amplifier, Local Oscillator of FM/VHF Tuner High Current Gain Bandwidth Product fT=1.1 GHz (Typ)TO-9211. Emitter 2. Base 3. CollectorNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage 30 VVCEO Collector-Emitter Voltage 15 VVEBO Emitter-Base Voltage 5 VIC Colle

 9.3. Size:38K  fairchild semi
ss9011.pdf

SS9012
SS9012

SS9011AM Converter, AM/FM IF AmplifierGeneral Purpose TransistorTO-9211. Emitter 2. Base 3. CollectorNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage 50 VVCEO Collector-Emitter Voltage 30 VVEBO Emitter-Base Voltage 5 VIC Collector Current 30 mAPC Collector Power Dissipatio

 9.4. Size:40K  fairchild semi
ss9013.pdf

SS9012
SS9012

SS90131W Output Amplifier of Potable Radios in Class B Push-pull Operation. High total power dissipation. (PT=625mW) High Collector Current. (IC=500mA) Complementary to SS9012 Excellent hFE linearity.TO-9211. Emitter 2. Base 3. CollectorNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCB

 9.5. Size:41K  fairchild semi
ss9015.pdf

SS9012
SS9012

SS9015Low Frequency, Low Noise Amplifier Complement to SS9014TO-9211. Emitter 2. Base 3. CollectorPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage -50 VVCEO Collector-Emitter Voltage -45 VVEBO Emitter-Base Voltage -5 VIC Collector Current -100 mAPC Collector Power Dissi

 9.6. Size:47K  samsung
ss9014.pdf

SS9012
SS9012

SS9014 NPN EPITAXIAL SILICON TRANSISTORPRE-AMPLIFIER, LOW LEVEL & LOW NOISETO-92 High total power dissipation. (PT=450mW) High hFE and good linearity Complementary to SS9015ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitVCollector-Base Voltage VCBO 50VCollector-Emitter Voltage VCEO 45VEmitter-Base Voltage VEBO 5mACollector Current IC

 9.7. Size:48K  samsung
ss9018.pdf

SS9012
SS9012

SS9018 NPN EPITAXIAL SILICON TRANSISTORAM/FM AMPLIFIER, LOCAL OSCILLATORTO-92OF FM/VHF TUNER High Current Gain Bandwidth Product fT=1,100 MHz (Typ)ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitVCollector-Base Voltage VCBO 30VCollector-Emitter Voltage VCEO 15VEmitter-Base Voltage VEBO 5mACollector Current IC 50mWCollector Dissipation PC

 9.8. Size:50K  samsung
ss9011.pdf

SS9012
SS9012

SS9011 NPN EPITAXIAL SILICON TRANSISTORAM CONVERTER,AM/FM IF AMPLIFIERTO-92GENERAL PURPOSE TRANSISTORABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitVCollector-Base Voltage VCBO 50VCollector-Emitter Voltage VCEO 30VEmitter-Base Voltage VEBO 5Collector Current IC 30mwCollector Dissipation PC 400Junction Temperature TJ 150Storage Temperature T

 9.9. Size:53K  samsung
ss9013.pdf

SS9012
SS9012

SS9013 NPN EPITAXIAL SILICON TRANSISTOR1W OUTPUT AMPLIFIER OF POTABLETO-92RADIOS IN CLASSB PUSH-PULL OPERATION. High total power dissipation. (PT=625mW) High Collector Current. (IC=500mA) Complementary to SS9012 Excelent hFE linearity.ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitVCollector-Base Voltage VCBO 40VCollector-Emitter Vo

 9.10. Size:59K  samsung
ss9015.pdf

SS9012
SS9012

SS9015 PNP EPITAXIAL SILICON TRANSISTORLOW FREQUENCY, LOW NOISE AMPLIFIERTO-92 Complement to SS9014ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitVCollector-Base Voltage VCBO -50VCollector-Emitter Voltage VCEO -45VEmitter-Base Voltage VEBO -5mACollector Current IC -100mWCollector Dissipation PC 450Junction Temperature TJ 150Storage Tem

 9.11. Size:239K  kexin
ss9015.pdf

SS9012
SS9012

DIP Type e TransistorsSMD TypPNP TransistorsSS9015Unit:mmTO-924.8 0.3 3.8 0.3FeaturesComplementary to SS90140.60 Max0.45 0.1 0.521 31.Emitter2.Base1.272.543.CollectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-Base Voltage VCBO -50 VCollector-Emitter Voltage VCEO -45 VEmitter-Base Voltage VEBO -5 VCollector Current

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