Биполярный транзистор SS9012
Даташит. Аналоги
Наименование производителя: SS9012
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.625
W
Макcимально допустимое напряжение коллектор-база (Ucb): 40
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 20
V
Макcимальный постоянный ток коллектора (Ic): 0.5
A
Предельная температура PN-перехода (Tj): 150
°C
Статический коэффициент передачи тока (hfe): 64
Корпус транзистора:
TO92
- подбор биполярного транзистора по параметрам
SS9012
Datasheet (PDF)
..1. Size:35K fairchild semi
ss9012.pdf 

SS90121W Output Amplifier of Potable Radios in Class B Push-pull Operation. High total power dissipation. (PT=625mW) High Collector Current. (IC= -500mA) Complementary to SS9013 Excellent hFE linearity.TO-9211. Emitter 2. Base 3. CollectorPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsV
..2. Size:46K samsung
ss9012.pdf 

SS9012 PNP EPITAXIAL SILICON TRANSISTOR1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASSTO-92B PUSH-PULL OPERATION. High total power dissipation. (PT=625mW) High Collector Current. (IC= -500mA) Complementary to SS9013 Excelent hFE linearity.ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitVCollector-Base Voltage VCBO -40VCollector-Emitter
9.1. Size:38K fairchild semi
ss9014.pdf 

SS9014Pre-Amplifier, Low Level & Low Noise High total power dissipation. (PT=450mW) High hFE and good linearity Complementary to SS9015TO-9211. Emitter 2. Base 3. CollectorNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage 50 VVCEO Collector-Emitter Voltage 45 VVEBO
9.2. Size:40K fairchild semi
ss9018.pdf 

SS9018AM/FM Amplifier, Local Oscillator of FM/VHF Tuner High Current Gain Bandwidth Product fT=1.1 GHz (Typ)TO-9211. Emitter 2. Base 3. CollectorNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage 30 VVCEO Collector-Emitter Voltage 15 VVEBO Emitter-Base Voltage 5 VIC Colle
9.3. Size:38K fairchild semi
ss9011.pdf 

SS9011AM Converter, AM/FM IF AmplifierGeneral Purpose TransistorTO-9211. Emitter 2. Base 3. CollectorNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage 50 VVCEO Collector-Emitter Voltage 30 VVEBO Emitter-Base Voltage 5 VIC Collector Current 30 mAPC Collector Power Dissipatio
9.4. Size:40K fairchild semi
ss9013.pdf 

SS90131W Output Amplifier of Potable Radios in Class B Push-pull Operation. High total power dissipation. (PT=625mW) High Collector Current. (IC=500mA) Complementary to SS9012 Excellent hFE linearity.TO-9211. Emitter 2. Base 3. CollectorNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCB
9.5. Size:41K fairchild semi
ss9015.pdf 

SS9015Low Frequency, Low Noise Amplifier Complement to SS9014TO-9211. Emitter 2. Base 3. CollectorPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage -50 VVCEO Collector-Emitter Voltage -45 VVEBO Emitter-Base Voltage -5 VIC Collector Current -100 mAPC Collector Power Dissi
9.6. Size:47K samsung
ss9014.pdf 

SS9014 NPN EPITAXIAL SILICON TRANSISTORPRE-AMPLIFIER, LOW LEVEL & LOW NOISETO-92 High total power dissipation. (PT=450mW) High hFE and good linearity Complementary to SS9015ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitVCollector-Base Voltage VCBO 50VCollector-Emitter Voltage VCEO 45VEmitter-Base Voltage VEBO 5mACollector Current IC
9.7. Size:48K samsung
ss9018.pdf 

SS9018 NPN EPITAXIAL SILICON TRANSISTORAM/FM AMPLIFIER, LOCAL OSCILLATORTO-92OF FM/VHF TUNER High Current Gain Bandwidth Product fT=1,100 MHz (Typ)ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitVCollector-Base Voltage VCBO 30VCollector-Emitter Voltage VCEO 15VEmitter-Base Voltage VEBO 5mACollector Current IC 50mWCollector Dissipation PC
9.8. Size:50K samsung
ss9011.pdf 

SS9011 NPN EPITAXIAL SILICON TRANSISTORAM CONVERTER,AM/FM IF AMPLIFIERTO-92GENERAL PURPOSE TRANSISTORABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitVCollector-Base Voltage VCBO 50VCollector-Emitter Voltage VCEO 30VEmitter-Base Voltage VEBO 5Collector Current IC 30mwCollector Dissipation PC 400Junction Temperature TJ 150Storage Temperature T
9.9. Size:53K samsung
ss9013.pdf 

SS9013 NPN EPITAXIAL SILICON TRANSISTOR1W OUTPUT AMPLIFIER OF POTABLETO-92RADIOS IN CLASSB PUSH-PULL OPERATION. High total power dissipation. (PT=625mW) High Collector Current. (IC=500mA) Complementary to SS9012 Excelent hFE linearity.ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitVCollector-Base Voltage VCBO 40VCollector-Emitter Vo
9.10. Size:59K samsung
ss9015.pdf 

SS9015 PNP EPITAXIAL SILICON TRANSISTORLOW FREQUENCY, LOW NOISE AMPLIFIERTO-92 Complement to SS9014ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitVCollector-Base Voltage VCBO -50VCollector-Emitter Voltage VCEO -45VEmitter-Base Voltage VEBO -5mACollector Current IC -100mWCollector Dissipation PC 450Junction Temperature TJ 150Storage Tem
9.11. Size:239K kexin
ss9015.pdf 

DIP Type e TransistorsSMD TypPNP TransistorsSS9015Unit:mmTO-924.8 0.3 3.8 0.3FeaturesComplementary to SS90140.60 Max0.45 0.1 0.521 31.Emitter2.Base1.272.543.CollectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-Base Voltage VCBO -50 VCollector-Emitter Voltage VCEO -45 VEmitter-Base Voltage VEBO -5 VCollector Current
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