SS9015 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SS9015
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.45 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 45 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 100 MHz
Ganancia de corriente contínua (hfe): 60
Paquete / Cubierta: TO92
Búsqueda de reemplazo de transistor bipolar SS9015
SS9015 Datasheet (PDF)
ss9015.pdf
SS9015Low Frequency, Low Noise Amplifier Complement to SS9014TO-9211. Emitter 2. Base 3. CollectorPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage -50 VVCEO Collector-Emitter Voltage -45 VVEBO Emitter-Base Voltage -5 VIC Collector Current -100 mAPC Collector Power Dissi
ss9015.pdf
SS9015 PNP EPITAXIAL SILICON TRANSISTORLOW FREQUENCY, LOW NOISE AMPLIFIERTO-92 Complement to SS9014ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitVCollector-Base Voltage VCBO -50VCollector-Emitter Voltage VCEO -45VEmitter-Base Voltage VEBO -5mACollector Current IC -100mWCollector Dissipation PC 450Junction Temperature TJ 150Storage Tem
ss9015.pdf
DIP Type e TransistorsSMD TypPNP TransistorsSS9015Unit:mmTO-924.8 0.3 3.8 0.3FeaturesComplementary to SS90140.60 Max0.45 0.1 0.521 31.Emitter2.Base1.272.543.CollectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-Base Voltage VCBO -50 VCollector-Emitter Voltage VCEO -45 VEmitter-Base Voltage VEBO -5 VCollector Current
ss9014.pdf
SS9014Pre-Amplifier, Low Level & Low Noise High total power dissipation. (PT=450mW) High hFE and good linearity Complementary to SS9015TO-9211. Emitter 2. Base 3. CollectorNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage 50 VVCEO Collector-Emitter Voltage 45 VVEBO
ss9018.pdf
SS9018AM/FM Amplifier, Local Oscillator of FM/VHF Tuner High Current Gain Bandwidth Product fT=1.1 GHz (Typ)TO-9211. Emitter 2. Base 3. CollectorNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage 30 VVCEO Collector-Emitter Voltage 15 VVEBO Emitter-Base Voltage 5 VIC Colle
ss9012.pdf
SS90121W Output Amplifier of Potable Radios in Class B Push-pull Operation. High total power dissipation. (PT=625mW) High Collector Current. (IC= -500mA) Complementary to SS9013 Excellent hFE linearity.TO-9211. Emitter 2. Base 3. CollectorPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsV
ss9011.pdf
SS9011AM Converter, AM/FM IF AmplifierGeneral Purpose TransistorTO-9211. Emitter 2. Base 3. CollectorNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage 50 VVCEO Collector-Emitter Voltage 30 VVEBO Emitter-Base Voltage 5 VIC Collector Current 30 mAPC Collector Power Dissipatio
ss9013.pdf
SS90131W Output Amplifier of Potable Radios in Class B Push-pull Operation. High total power dissipation. (PT=625mW) High Collector Current. (IC=500mA) Complementary to SS9012 Excellent hFE linearity.TO-9211. Emitter 2. Base 3. CollectorNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCB
ss9014.pdf
SS9014 NPN EPITAXIAL SILICON TRANSISTORPRE-AMPLIFIER, LOW LEVEL & LOW NOISETO-92 High total power dissipation. (PT=450mW) High hFE and good linearity Complementary to SS9015ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitVCollector-Base Voltage VCBO 50VCollector-Emitter Voltage VCEO 45VEmitter-Base Voltage VEBO 5mACollector Current IC
ss9018.pdf
SS9018 NPN EPITAXIAL SILICON TRANSISTORAM/FM AMPLIFIER, LOCAL OSCILLATORTO-92OF FM/VHF TUNER High Current Gain Bandwidth Product fT=1,100 MHz (Typ)ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitVCollector-Base Voltage VCBO 30VCollector-Emitter Voltage VCEO 15VEmitter-Base Voltage VEBO 5mACollector Current IC 50mWCollector Dissipation PC
ss9012.pdf
SS9012 PNP EPITAXIAL SILICON TRANSISTOR1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASSTO-92B PUSH-PULL OPERATION. High total power dissipation. (PT=625mW) High Collector Current. (IC= -500mA) Complementary to SS9013 Excelent hFE linearity.ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitVCollector-Base Voltage VCBO -40VCollector-Emitter
ss9011.pdf
SS9011 NPN EPITAXIAL SILICON TRANSISTORAM CONVERTER,AM/FM IF AMPLIFIERTO-92GENERAL PURPOSE TRANSISTORABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitVCollector-Base Voltage VCBO 50VCollector-Emitter Voltage VCEO 30VEmitter-Base Voltage VEBO 5Collector Current IC 30mwCollector Dissipation PC 400Junction Temperature TJ 150Storage Temperature T
ss9013.pdf
SS9013 NPN EPITAXIAL SILICON TRANSISTOR1W OUTPUT AMPLIFIER OF POTABLETO-92RADIOS IN CLASSB PUSH-PULL OPERATION. High total power dissipation. (PT=625mW) High Collector Current. (IC=500mA) Complementary to SS9012 Excelent hFE linearity.ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitVCollector-Base Voltage VCBO 40VCollector-Emitter Vo
Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050