SS9015 Todos los transistores

 

SS9015 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SS9015
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.45 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 45 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 100 MHz
   Ganancia de corriente contínua (hfe): 60
   Paquete / Cubierta: TO92
 

 Búsqueda de reemplazo de SS9015

   - Selección ⓘ de transistores por parámetros

 

SS9015 Datasheet (PDF)

 ..1. Size:41K  fairchild semi
ss9015.pdf pdf_icon

SS9015

SS9015Low Frequency, Low Noise Amplifier Complement to SS9014TO-9211. Emitter 2. Base 3. CollectorPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage -50 VVCEO Collector-Emitter Voltage -45 VVEBO Emitter-Base Voltage -5 VIC Collector Current -100 mAPC Collector Power Dissi

 ..2. Size:59K  samsung
ss9015.pdf pdf_icon

SS9015

SS9015 PNP EPITAXIAL SILICON TRANSISTORLOW FREQUENCY, LOW NOISE AMPLIFIERTO-92 Complement to SS9014ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitVCollector-Base Voltage VCBO -50VCollector-Emitter Voltage VCEO -45VEmitter-Base Voltage VEBO -5mACollector Current IC -100mWCollector Dissipation PC 450Junction Temperature TJ 150Storage Tem

 ..3. Size:239K  kexin
ss9015.pdf pdf_icon

SS9015

DIP Type e TransistorsSMD TypPNP TransistorsSS9015Unit:mmTO-924.8 0.3 3.8 0.3FeaturesComplementary to SS90140.60 Max0.45 0.1 0.521 31.Emitter2.Base1.272.543.CollectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-Base Voltage VCBO -50 VCollector-Emitter Voltage VCEO -45 VEmitter-Base Voltage VEBO -5 VCollector Current

 9.1. Size:38K  fairchild semi
ss9014.pdf pdf_icon

SS9015

SS9014Pre-Amplifier, Low Level & Low Noise High total power dissipation. (PT=450mW) High hFE and good linearity Complementary to SS9015TO-9211. Emitter 2. Base 3. CollectorNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage 50 VVCEO Collector-Emitter Voltage 45 VVEBO

Otros transistores... SS1906 , SS2503A , SS8050 , SS8550 , SS9011 , SS9012 , SS9013 , SS9014 , S9018 , SS9016 , SS9018 , ST03 , ST10 , ST1026 , ST1050 , ST11 , ST12 .

History: BCX73-25 | INC5006AC1 | BC848CDXV6T1G | OC76N | HA7543

 

 
Back to Top

 


 
.