ST10 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

DISCRETE SEMICONDUCTORSDATA SHEETBST100P-channel enhancement modevertical D-MOS transistorApril 1995Product specificationFile under Discrete Semiconductors, SC13bPhilips Semiconductors Product specificationP-channel enhancement mode verticalBST100D-MOS transistorDESCRIPTION QUICK REFERENCE DATAP-channel vertical D-MOS transistorDrain-source voltage -VDS max. 60 VT

KST10VHF/UHF Transistor32SOT-2311. Base 2. Emitter 3. CollectorNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector Base Voltage 30 VVCEO Collector-Emitter Voltage 25 VVEBO Emitter-Base Voltage 3 VPC Collector Power Dissipation 350 mWTSTG Storage Temperature 150 CRTH(j-a) Thermal Resis

J/SST108 SeriesVishay SiliconixNChannel JFETsJ108 SST108J109 SST109J110 SST110PRODUCT SUMMARYPart Number VGS(off) (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns)J/SST108 3 to 10 8 20 4J/SST109 2 to 6 12 20 4J/SST110 0.5 to 4 18 20 4FEATURES BENEFITS APPLICATIONSD Low On-Resistance: J108

N-Channel JFET SwitchLLCJ108 J110 / SST108 SST110FEATURES APPLICATIONS Low Cost Analog Switches Automated Insertion Package Choppers Low Insertion Loss Commutators No Offset or Error Voltages Generated by Closed Switch Low-Noise Audio Amplifiers Purely ResistiveABSOLUTE MAXIMUM RATINGS High Isolation

KST10TRANSISTOR (NPN) SOT23 FEATURES VHF/UHF Transistor MARKING:3E1 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER V Collector-Base Voltage 30 V CBO3. COLLECTOR V Collector-Emitter Voltage 25 V CEOV Emitter-Base Voltage 3 V EBOI Collector Current 40 mA CPC Collector Power Dissipation 350 mW R Therma

ST1004SRG N Channel Enhancement Mode MOSFET 2.0A DESCRIPTION ST1004SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The process is especially to improve the overall efficiency of DC/DC conventional switching PWM controllers. It has been optimized for low gate charge, low R and fast switchi

ST1005SRG P Channel Enhancement Mode MOSFET -0.8A DESCRIPTION ST1005SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone an

ST10E4 N Channel Enhancement Mode MOSFET 3.0A DESCRIPTION The ST10E4 is the N-Channel logic enhancement mode power field effect transistor is produce using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These device are particularly suited for low voltage application such as cellular phone and notebo

ST1002 N Channel Enhancement Mode MOSFET 3.0A DESCRIPTION The ST1002 is the N-Channel logic enhancement mode power field effect transistor is produce using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These device are particularly suited for low voltage application such as cellular phone and notebo

JST100N30T2 30V,100A N-channel MOSFETFeatures Application 30V,100A Load Switch R =3.1m (Typ.) @ V =10V PWM ApplicationDS(ON) GS R =4.5m (Typ.) @ V =4.5VDS(ON) GS Advanced Trench Technology Provide Excellent R and Low Gate ChargeDS(ON)Package JST100N30T2 Absolute Maximum Ratings (T =25 unless otherwise specified)CSymbol Parameter