ST29 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ST29
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15 W
Tensión colector-emisor (Vce): 30 V
Corriente del colector DC máxima (Ic): 0.05 A
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 20 MHz
Capacitancia de salida (Cc): 3 pF
Ganancia de corriente contínua (hfe): 30
Paquete / Cubierta: TO5
Búsqueda de reemplazo de transistor bipolar ST29
ST29 Datasheet (PDF)
pmst2907a 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETok, halfpageM3D187PMST2907APNP switching transistor1999 Apr 22Product specificationSupersedes data of 1997 Jul 08Philips Semiconductors Product specificationPNP switching transistor PMST2907AFEATURES PINNING Low current (max. 200 mA)PIN DESCRIPTION Low voltage (max. 60 V).1 base2 emitterAPPLICATIONS3 collector Medi
pmst2907a.pdf
DISCRETE SEMICONDUCTORSDATA SHEETok, halfpageM3D187PMST2907APNP switching transistorProduct specification 2001 Nov 19Supersedes data of 1999 Apr 22Philips Semiconductors Product specificationPNP switching transistor PMST2907AFEATURES PINNING Low current (max. 600 mA)PIN DESCRIPTION Low voltage (max. 60 V).1 base2 emitterAPPLICATIONS3 collector Mediu
kst2907a.pdf
KST2907A3General Purpose Transistor2SOT-2311. Base 2. Emitter 3. CollectorPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage -60 VVCEO Collector-Emitter Voltage -60 VVEBO Emitter-Base Voltage -5 VIC Collector Current -600 mAPC Collector Power Dissipation 350 mWTSTG Storage
pmst2907a.pdf
PMST2907A60 V, 600 mA PNP switching transistor12 August 2016 Product data sheet1. General descriptionPNP switching transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plasticpackage.NPN complement: PMST2222A2. Features and benefits General purpose switching transistor AEC-Q101 qualified3. Applications Switching and linear amplification4. Quick
sst2907a.pdf
SST2907ADatasheetPNP Medium Power Transistor(Switching)lOutlinel SOT-23 Parameter Value VCEO-60VIC-600mASST3lFeatures lInner circuitl l1)BVCEO>-60V(IC=-10mA)lApplicationlAUDIO FREQUENCY SMALL SIGNAL AMPLIFIER lPackaging specificat
umt2907a sst2907a mmst2907a.pdf
UMT2907A / SST2907A / MMST2907A Transistors PNP Medium Power Transistor (Switching) UMT2907A / SST2907A / MMST2907A Features 1) BVCEO
sst2907ahzg.pdf
SST2907A HZGDatasheetPNP Medium Power Transistor(Switching)AEC-Q101 QualifiedlOutlinel SOT-23 Parameter Value VCEO-60VIC-600mASST3lFeatures lInner circuitl l1)BVCEO>-60V(IC=-10mA)lApplicationlAUDIO FREQUENCY SMALL SIGNAL AMPLIFIER
mmst2907a.pdf
MMST2907A 60V PNP SMALL SIGNAL TRANSISTOR IN SOT323 Features Mechanical Data BVCEO > -60V Case: SOT323 Case Material: Molded Plastic, Green Molding Compound. IC = -600mA Collector Current UL Flammability Rating 94V-0 Epitaxial Planar Die Construction Moisture Sensitivity: Level 1 per J-STD-020 Ultra-Small Surface Mount Package Terminals:
mmst2907a.pdf
MCCMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMMST2907AMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Power dissipation: 200mW (Tamb=25 )PNP Small Signal Collector current: -0.6A Marking Code: K3F Transistors Operating and Storage junction temperature range -55 to + 150 Lead Free Finish/
mmst2907a.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate TransistorsMMST2907A TRANSISTOR (PNP) SOT-323 FEATURES Epitaxial planar die construction 1. BASE Complementary PNP Type available(MMST2222A) 2. EMITTERMARKING:K3F 3. COLLECTORMAXIMUM RATINGS(Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -60 V VCEO
mmst2907a.pdf
MMST2907 ATRANSISTOR(PNP)FEATURES SOT-323 Epitaxial planar die construction Complementary PNP Type available(MMST2222A) MARKING:K3F 1. BASE 2. EMITTER MAXIMUM RATINGS(TA=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value UnitsVCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V Collector Current
mmst2907a.pdf
MMST2907ASOT-323 Transistor (PNP)SOT-3231. BASE 2. EMITTER 3. COLLECTOR Features Epitaxial planar die construction Complementary PNP Type available(MMST2222A) MARKING:K3F MAXIMUM RATINGS(TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -60 V Dimensions in inches and (millimeters)VCEO Collector-Emitter Voltage -60 V VEBO Emi
mmst2907a.pdf
SMD Type MOSFETPNP TransistorsMMST2907A (MMST2907A) Features Epitaxial planar die construction Complementary to MMST2222A1.Base2.Emitter3.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO -60 V Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -600
kmst2907a.pdf
SMD Type MOSFETPNP TransistorsMMST2907A (MMST2907A) Features Epitaxial planar die construction Complementary to MMST2222A1.Base2.Emitter3.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO -60 V Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -600
mmst2907a.pdf
RoHS RoHSCOMPLIANT COMPLIANTMMST2907A PNP Transistor Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moitsure Sensitivity Level 1 High Conductance Surface Mount Package Ideally Suited for Automatic Insertion Mechanical Data Package: SOT-323 Molding compound meets UL 94 V-0 flammabi
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2N5527
History: 2N5527
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