ST29. Аналоги и основные параметры
Наименование производителя: ST29
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.15 W
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 30 V
Макcимальный постоянный ток коллектора (Ic): 0.05 A
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 20 MHz
Ёмкость коллекторного перехода (Cc): 3 pf
Статический коэффициент передачи тока (hFE): 30
Корпус транзистора: TO5
Аналоги (замена) для ST29
- подборⓘ биполярного транзистора по параметрам
ST29 даташит
0.1. Size:50K philips
pmst2907a 2.pdf 

DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D187 PMST2907A PNP switching transistor 1999 Apr 22 Product specification Supersedes data of 1997 Jul 08 Philips Semiconductors Product specification PNP switching transistor PMST2907A FEATURES PINNING Low current (max. 200 mA) PIN DESCRIPTION Low voltage (max. 60 V). 1 base 2 emitter APPLICATIONS 3 collector Medi
0.2. Size:49K philips
pmst2907a.pdf 

DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D187 PMST2907A PNP switching transistor Product specification 2001 Nov 19 Supersedes data of 1999 Apr 22 Philips Semiconductors Product specification PNP switching transistor PMST2907A FEATURES PINNING Low current (max. 600 mA) PIN DESCRIPTION Low voltage (max. 60 V). 1 base 2 emitter APPLICATIONS 3 collector Mediu
0.3. Size:54K fairchild semi
kst2907a.pdf 

KST2907A 3 General Purpose Transistor 2 SOT-23 1 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current -600 mA PC Collector Power Dissipation 350 mW TSTG Storage
0.4. Size:657K nxp
pmst2907a.pdf 

PMST2907A 60 V, 600 mA PNP switching transistor 12 August 2016 Product data sheet 1. General description PNP switching transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. NPN complement PMST2222A 2. Features and benefits General purpose switching transistor AEC-Q101 qualified 3. Applications Switching and linear amplification 4. Quick
0.5. Size:692K rohm
sst2907a.pdf 

SST2907A Datasheet PNP Medium Power Transistor (Switching) lOutline l SOT-23 Parameter Value VCEO -60V IC -600mA SST3 lFeatures lInner circuit l l 1)BVCEO>-60V(IC=-10mA) lApplication l AUDIO FREQUENCY SMALL SIGNAL AMPLIFIER lPackaging specificat
0.6. Size:93K rohm
umt2907a sst2907a mmst2907a.pdf 

UMT2907A / SST2907A / MMST2907A Transistors PNP Medium Power Transistor (Switching) UMT2907A / SST2907A / MMST2907A Features 1) BVCEO
0.8. Size:425K diodes
mmst2907a.pdf 

MMST2907A 60V PNP SMALL SIGNAL TRANSISTOR IN SOT323 Features Mechanical Data BVCEO > -60V Case SOT323 Case Material Molded Plastic, Green Molding Compound. IC = -600mA Collector Current UL Flammability Rating 94V-0 Epitaxial Planar Die Construction Moisture Sensitivity Level 1 per J-STD-020 Ultra-Small Surface Mount Package Terminals
0.9. Size:187K mcc
mmst2907a.pdf 

MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth MMST2907A Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Power dissipation 200mW (Tamb=25 ) PNP Small Signal Collector current -0.6A Marking Code K3F Transistors Operating and Storage junction temperature range -55 to + 150 Lead Free Finish/
0.10. Size:610K jiangsu
mmst2907a.pdf 

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors MMST2907A TRANSISTOR (PNP) SOT-323 FEATURES Epitaxial planar die construction 1. BASE Complementary PNP Type available(MMST2222A) 2. EMITTER MARKING K3F 3. COLLECTOR MAXIMUM RATINGS(Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -60 V VCEO
0.11. Size:686K htsemi
mmst2907a.pdf 

MMST2907 A TRANSISTOR(PNP) FEATURES SOT-323 Epitaxial planar die construction Complementary PNP Type available(MMST2222A) MARKING K3F 1. BASE 2. EMITTER MAXIMUM RATINGS(TA=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value Units VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V Collector Current
0.12. Size:383K lge
mmst2907a.pdf 

MMST2907A SOT-323 Transistor (PNP) SOT-323 1. BASE 2. EMITTER 3. COLLECTOR Features Epitaxial planar die construction Complementary PNP Type available(MMST2222A) MARKING K3F MAXIMUM RATINGS(TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -60 V Dimensions in inches and (millimeters) VCEO Collector-Emitter Voltage -60 V VEBO Emi
0.13. Size:736K kexin
mmst2907a.pdf 

SMD Type MOSFET PNP Transistors MMST2907A (MMST2907A) Features Epitaxial planar die construction Complementary to MMST2222A 1.Base 2.Emitter 3.Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO -60 V Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -600
0.14. Size:537K kexin
kmst2907a.pdf 

SMD Type MOSFET PNP Transistors MMST2907A (MMST2907A) Features Epitaxial planar die construction Complementary to MMST2222A 1.Base 2.Emitter 3.Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO -60 V Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -600
0.15. Size:306K cn yangzhou yangjie elec
mmst2907a.pdf 

RoHS RoHS COMPLIANT COMPLIANT MMST2907A PNP Transistor Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moitsure Sensitivity Level 1 High Conductance Surface Mount Package Ideally Suited for Automatic Insertion Mechanical Data Package SOT-323 Molding compound meets UL 94 V-0 flammabi
Другие транзисторы: ST1527, ST1528, ST153, ST157, ST161, ST176, ST250, ST25C, D882, ST30, ST31, ST32, ST33, ST34, ST3904, ST3906, ST40