ST30 Todos los transistores

J/SST/U308 Series Vishay Siliconix N-Channel JFETs J308 SST308 U309 J309 SST309 U310 J310 SST310 PRODUCT SUMMARY Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J308 -1 to -6.5 -25 8 12 J309 -1 to -4 -25 10 12 J310 -2 to -6.5 -25 8 24 SST308 -1 to -6.5 -25 8 12 SST309 -1 to -4 -25 10 12 SST310 -2 to -6.5 -25 8 24 U309 -1 to -4 -25 10 12 U310 -2.5 to -6 -25 10

High Speed IGBT with Diode IXSH 30 N60CD1 VCES = 600 V IXSK 30 N60CD1 IC25 = 55 A IXST 30 N60CD1 VCE(sat) = 2.5 V Short Circuit SOA Capability tfi = 70 ns Preliminary data TO-247AD (IXSH) Symbol Test Conditions Maximum Ratings G C VCES TJ = 25 C to 150 C 600 V E VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V TO-268 (D3) (IXST) VGES Continuous 20 V VGEM Transient 30 V C G

VCES ICES tfi High Speed IGBT IXSH/IXST 30N60B 600 V 2.0 V 140 ns IXSH/IXST 30N60C 600 V 2.5 V 70 ns Short Circuit SOA Capability TO-247 AD (IXSH) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V (TAB) VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V VGEM Transient 30 V TO-268 (D3) ( IXST) IC25 TC = 25 C55 A IC90 TC = 90 C30 A G ICM

VCES ICES tfi High Speed IGBT IXSH/IXST 30N60B 600 V 2.0 V 140 ns IXSH/IXST 30N60C 600 V 2.5 V 70 ns Short Circuit SOA Capability TO-247 AD (IXSH) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V (TAB) VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V VGEM Transient 30 V TO-268 (D3) ( IXST) IC25 TC = 25 C55 A IC90 TC = 90 C30 A G ICM

High Speed IGBT with Diode IXSH 30N60BD1 VCES = 600 V IXSK 30N60BD1 IC25 = 55 A IXST 30N60BD1 VCE(sat) = 2.0 V Short Circuit SOA Capability tfi = 140 ns Symbol Test Conditions Maximum Ratings TO-247AD (IXSH) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V G VGES Continuous 20 V C E VGEM Transient 30 V TO-268 (D3) IC25 TC = 25 C55 A (IXST) IC9

High Speed IGBT IXSH 30N60B2D1 VCES = 600 V IXST 30N60B2D1 with Diode IC25 = 48 A VCE(sat) = 2.5 V Short Circuit SOA Capability Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-247 (IXSH) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V VGEM Transient 30 V C (TAB) G C E IC25 TC = 25 C48 A IC110 TC = 110 C

VCES ICES tfi High Speed IGBT IXSH/IXST 30N60B 600 V 2.0 V 140 ns IXSH/IXST 30N60C 600 V 2.5 V 70 ns Short Circuit SOA Capability TO-247 AD (IXSH) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V (TAB) VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V VGEM Transient 30 V TO-268 (D3) ( IXST) IC25 TC = 25 C55 A IC90 TC = 90 C30 A G ICM

High Speed IGBT IXSH 30N60B2D1 VCES = 600 V IXST 30N60B2D1 with Diode IC25 = 48 A VCE(sat) = 2.5 V Short Circuit SOA Capability Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-247 (IXSH) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V VGEM Transient 30 V C (TAB) G C E IC25 TC = 25 C48 A IC110 TC = 110 C

NST30010MXV6T1G, NSVT30010MXV6T1G Dual Matched General Purpose Transistor PNP Matched Pair http //onsemi.com These transistors are housed in an ultra-small SOT563 package ideally suited for portable products. They are assembled to create a pair of devices highly matched in all parameters, eliminating the need for costly trimming. Applications are Current Mirrors; Differential, Sense a

NST30010MXV6T1G, NSVT30010MXV6T1G Dual Matched General Purpose Transistor PNP Matched Pair http //onsemi.com These transistors are housed in an ultra-small SOT563 package ideally suited for portable products. They are assembled to create a pair of devices highly matched in all parameters, eliminating the need for costly trimming. Applications are Current Mirrors; Differential, Sense a

J/SST/U308 Series N-Channel JFETs J308 SST308 U309 J309 SST309 U310 J310 SST310 Product Summary Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J308 1 to 6.5 25 8 12 J309 1 to 4 25 10 12 J310 2 to 6.5 25 8 24 SST308 1 to 6.5 25 8 12 SST309 1 to 4 25 10 12 SST310 2 to 6.5 25 8 24 U309 1 to 4 25 10 12

OST30N65KTXF Enhancement Mode N-Channel Power IGBT General Description OST30N65KTXF uses advanced Oriental-Semi s patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CE performance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol

OST30N65HMF Enhancement Mode N-Channel Power IGBT General Description OST30N65HMF uses advanced Oriental-Semi s patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CE performance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog

CST30N10F,CST30N10U, nvert Suzhou Convert Semiconductor Co ., Ltd. CST30N10D,CST30N10P 100V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Device Marking and Package Information Device Package Marking CST30N10F TO-220F CST30N10F CST30N10D T

WST3078 N&P-Ch MOSFET General Description Product Summery The WST3078 is the highest performance trench BVDSS RDSON ID N-ch and P-ch MOSFETs with extreme high cell 30V 32m 3.5A density , which provide excellent RDSON and gate charge for most of the small power switching and -30V 78m -3A load switch applications. The WST3078 meet the RoHS and Green Applications Product

WST3052 N-Ch MOSFET General Description Product Summery The WST3052 is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON 30V 60m 2.5A and gate charge for most of the small power switching and load switch applications. Applications The WST3052 meet the RoHS and Green Product requirement with full funct

WST3034 N-Ch MOSFET General Description Product Summery The WST3034 is the highest performance BVDSS RDSON ID trench N-ch MOSFET with extreme high cell density , which provide excellent RDSON and 20V 22m 6.9A gate charge for most of the small power switching and load switch applications. Applications The WST3034 meet the RoHS and Green Product requirement with full functi

WST3032 N-Ch MOSFET General Description Product Summery The WST3032 is the highest performance trench N- BVDSS RDSON ID CH MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most 30V 5 200mA of the small power switching and load switch applications. Applications The WST3032 meet the RoHS and Green Product requirement with full functi