J/SST/U308 SeriesVishay SiliconixN-Channel JFETsJ308 SST308 U309J309 SST309 U310J310 SST310PRODUCT SUMMARYPart Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA)J308 -1 to -6.5 -25 8 12J309 -1 to -4 -25 10 12J310 -2 to -6.5 -25 8 24SST308 -1 to -6.5 -25 8 12SST309 -1 to -4 -25 10 12SST310 -2 to -6.5 -25 8 24U309 -1 to -4 -25 10 12U310 -2.5 to -6 -25 10

High Speed IGBT with Diode IXSH 30 N60CD1VCES = 600 VIXSK 30 N60CD1IC25 = 55 AIXST 30 N60CD1VCE(sat) = 2.5 VShort Circuit SOA Capabilitytfi = 70 nsPreliminary dataTO-247AD(IXSH)Symbol Test Conditions Maximum RatingsGCVCES TJ = 25C to 150C 600 V EVCGR TJ = 25C to 150C; RGE = 1 MW 600 VTO-268 (D3)(IXST)VGES Continuous 20 VVGEM Transient 30 VCG

VCES ICES tfiHigh Speed IGBTIXSH/IXST 30N60B 600 V 2.0 V 140 nsIXSH/IXST 30N60C 600 V 2.5 V 70 nsShort Circuit SOA CapabilityTO-247 AD (IXSH)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 V(TAB)VCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VVGEM Transient 30 VTO-268 (D3) ( IXST)IC25 TC = 25C55 AIC90 TC = 90C30 AGICM

VCES ICES tfiHigh Speed IGBTIXSH/IXST 30N60B 600 V 2.0 V 140 nsIXSH/IXST 30N60C 600 V 2.5 V 70 nsShort Circuit SOA CapabilityTO-247 AD (IXSH)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 V(TAB)VCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VVGEM Transient 30 VTO-268 (D3) ( IXST)IC25 TC = 25C55 AIC90 TC = 90C30 AGICM

High Speed IGBT with Diode IXSH 30N60BD1VCES = 600 VIXSK 30N60BD1IC25 = 55 AIXST 30N60BD1VCE(sat) = 2.0 VShort Circuit SOA Capabilitytfi = 140 nsSymbol Test Conditions Maximum Ratings TO-247AD(IXSH)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 MW 600 VGVGES Continuous 20 VCEVGEM Transient 30 VTO-268 (D3)IC25 TC = 25C55 A(IXST)IC9

High Speed IGBT IXSH 30N60B2D1VCES = 600 VIXST 30N60B2D1with Diode IC25 = 48 AVCE(sat) = 2.5 VShort Circuit SOA CapabilityPreliminary Data SheetSymbol Test Conditions Maximum Ratings TO-247 (IXSH)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VVGEM Transient 30 VC (TAB)GCEIC25 TC = 25C48 AIC110 TC = 110C

VCES ICES tfiHigh Speed IGBTIXSH/IXST 30N60B 600 V 2.0 V 140 nsIXSH/IXST 30N60C 600 V 2.5 V 70 nsShort Circuit SOA CapabilityTO-247 AD (IXSH)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 V(TAB)VCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VVGEM Transient 30 VTO-268 (D3) ( IXST)IC25 TC = 25C55 AIC90 TC = 90C30 AGICM

High Speed IGBT IXSH 30N60B2D1VCES = 600 VIXST 30N60B2D1with Diode IC25 = 48 AVCE(sat) = 2.5 VShort Circuit SOA CapabilityPreliminary Data SheetSymbol Test Conditions Maximum Ratings TO-247 (IXSH)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VVGEM Transient 30 VC (TAB)GCEIC25 TC = 25C48 AIC110 TC = 110C

NST30010MXV6T1G,NSVT30010MXV6T1GDual Matched GeneralPurpose TransistorPNP Matched Pairhttp://onsemi.comThese transistors are housed in an ultra-small SOT563 packageideally suited for portable products. They are assembled to create apair of devices highly matched in all parameters, eliminating the needfor costly trimming. Applications are Current Mirrors; Differential,Sense a

NST30010MXV6T1G,NSVT30010MXV6T1GDual Matched GeneralPurpose TransistorPNP Matched Pairhttp://onsemi.comThese transistors are housed in an ultra-small SOT563 packageideally suited for portable products. They are assembled to create apair of devices highly matched in all parameters, eliminating the needfor costly trimming. Applications are Current Mirrors; Differential,Sense a

J/SST/U308 SeriesN-Channel JFETsJ308 SST308 U309J309 SST309 U310J310 SST310Product SummaryPart Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA)J308 1 to 6.5 25 8 12J309 1 to 4 25 10 12J310 2 to 6.5 25 8 24SST308 1 to 6.5 25 8 12SST309 1 to 4 25 10 12SST310 2 to 6.5 25 8 24U309 1 to 4 25 10 12

OST30N65KTXF Enhancement Mode N-Channel Power IGBT General Description OST30N65KTXF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol

OST30N65HMF Enhancement Mode N-Channel Power IGBT General Description OST30N65HMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog

CST30N10F,CST30N10U,nvertSuzhou Convert Semiconductor Co ., Ltd.CST30N10D,CST30N10P100V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS)Device Marking and Package InformationDevice Package MarkingCST30N10F TO-220F CST30N10FCST30N10D T

WST3078N&P-Ch MOSFETGeneral Description Product SummeryThe WST3078 is the highest performance trench BVDSS RDSON ID N-ch and P-ch MOSFETs with extreme high cell 30V 32m 3.5Adensity , which provide excellent RDSON and gate charge for most of the small power switching and -30V 78m -3Aload switch applications. The WST3078 meet the RoHS and Green Applications Product

WST3052 N-Ch MOSFETGeneral Description Product SummeryThe WST3052 is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON 30V 60m 2.5Aand gate charge for most of the small power switching and load switch applications. Applications The WST3052 meet the RoHS and Green Product requirement with full funct

WST3034N-Ch MOSFETGeneral Description Product SummeryThe WST3034 is the highest performance BVDSS RDSON ID trench N-ch MOSFET with extreme high cell density , which provide excellent RDSON and 20V 22m 6.9Agate charge for most of the small power switching and load switch applications. Applications The WST3034 meet the RoHS and Green Product requirement with full functi

WST3032 N-Ch MOSFETGeneral Description Product SummeryThe WST3032 is the highest performance trench N-BVDSS RDSON ID CH MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most 30V 5 200mAof the small power switching and load switch applications. Applications The WST3032 meet the RoHS and Green Product requirement with full functi