ST31 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ST31
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-base (Vcb): 30 V
Tensión colector-emisor (Vce): 30 V
Tensión emisor-base (Veb): 2 V
Corriente del colector DC máxima (Ic): 0.025 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 15 MHz
Capacitancia de salida (Cc): 5 pF
Ganancia de corriente contínua (hfe): 35
Paquete / Cubierta: TO5
Búsqueda de reemplazo de transistor bipolar ST31
ST31 Datasheet (PDF)
2st31a.pdf
2ST31ALow voltage NPN power transistorFeatures High switching speedTAB Good performances in terms of hFE linearityApplication Linear and switching industrial applications321DescriptionTO-220The device is manufactured in planar technology with base island layout. The resulting transistor shows high gain performance coupled with low saturation voltag
j308 sst308 j309 sst309 j310 sst310 u309 u310.pdf
J/SST/U308 SeriesVishay SiliconixN-Channel JFETsJ308 SST308 U309J309 SST309 U310J310 SST310PRODUCT SUMMARYPart Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA)J308 -1 to -6.5 -25 8 12J309 -1 to -4 -25 10 12J310 -2 to -6.5 -25 8 24SST308 -1 to -6.5 -25 8 12SST309 -1 to -4 -25 10 12SST310 -2 to -6.5 -25 8 24U309 -1 to -4 -25 10 12U310 -2.5 to -6 -25 10
j308 j309 j310 sst308 sst310 sst309 u309 u310.pdf
J/SST/U308 SeriesN-Channel JFETsJ308 SST308 U309J309 SST309 U310J310 SST310Product SummaryPart Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA)J308 1 to 6.5 25 8 12J309 1 to 4 25 10 12J310 2 to 6.5 25 8 24SST308 1 to 6.5 25 8 12SST309 1 to 4 25 10 12SST310 2 to 6.5 25 8 24U309 1 to 4 25 10 12
hsst3134.pdf
HSST3134 N-Ch 20V Fast Switching MOSFETs Product Summary Description The HSST3134 is the high cell density trenched VDS 20 V N-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small RDS(ON),typ 280 m power switching and load switch applications. ID 0.9 A The HSST3134 meets the RoHS and Green Product requirement with full function reliability
hsst3139.pdf
HSST3139 P-Ch 20V Fast Switching MOSFETs Description Product Summary The HSST3139 is the high cell density trenched P-VDS -20 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),typ 230 m converter applications. ID -1.0 A The HSST3139 meet the RoHS and Green Product requirement with full function reliability approved.
2st31a.pdf
isc Silicon NPN Power Transistor 2ST31ADESCRIPTIONCollector-Emitter sustaining Voltage: V =60V(Min)CEOGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSLinear and switching industrial applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 60 VCBOV C
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: BUL64A | F120A | 2SA1353F | 2SD330E | ME2002 | BFG21W | BDS28C
History: BUL64A | F120A | 2SA1353F | 2SD330E | ME2002 | BFG21W | BDS28C
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050