ST31 Todos los transistores

 0.1. Size:371K  st
 2st31a.pdf

2ST31A Low voltage NPN power transistor Features High switching speed TAB Good performances in terms of hFE linearity Application Linear and switching industrial applications 3 2 1 Description TO-220 The device is manufactured in planar technology with base island layout. The resulting transistor shows high gain performance coupled with low saturation voltag

 0.2. Size:96K  vishay
 j308 sst308 j309 sst309 j310 sst310 u309 u310.pdf

J/SST/U308 Series Vishay Siliconix N-Channel JFETs J308 SST308 U309 J309 SST309 U310 J310 SST310 PRODUCT SUMMARY Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J308 -1 to -6.5 -25 8 12 J309 -1 to -4 -25 10 12 J310 -2 to -6.5 -25 8 24 SST308 -1 to -6.5 -25 8 12 SST309 -1 to -4 -25 10 12 SST310 -2 to -6.5 -25 8 24 U309 -1 to -4 -25 10 12 U310 -2.5 to -6 -25 10

 0.3. Size:98K  siliconix
 j308 j309 j310 sst308 sst310 sst309 u309 u310.pdf

J/SST/U308 Series N-Channel JFETs J308 SST308 U309 J309 SST309 U310 J310 SST310 Product Summary Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J308 1 to 6.5 25 8 12 J309 1 to 4 25 10 12 J310 2 to 6.5 25 8 24 SST308 1 to 6.5 25 8 12 SST309 1 to 4 25 10 12 SST310 2 to 6.5 25 8 24 U309 1 to 4 25 10 12

 0.4. Size:684K  huashuo
 hsst3134.pdf

HSST3134 N-Ch 20V Fast Switching MOSFETs Product Summary Description The HSST3134 is the high cell density trenched VDS 20 V N-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small RDS(ON),typ 280 m power switching and load switch applications. ID 0.9 A The HSST3134 meets the RoHS and Green Product requirement with full function reliability

 0.5. Size:707K  huashuo
 hsst3139.pdf

HSST3139 P-Ch 20V Fast Switching MOSFETs Description Product Summary The HSST3139 is the high cell density trenched P- VDS -20 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),typ 230 m converter applications. ID -1.0 A The HSST3139 meet the RoHS and Green Product requirement with full function reliability approved.

 0.6. Size:206K  inchange semiconductor
 2st31a.pdf

isc Silicon NPN Power Transistor 2ST31A DESCRIPTION Collector-Emitter sustaining Voltage V =60V(Min) CEO Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Linear and switching industrial applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 60 V CBO V C