ST34 Todos los transistores

CMST3410 NPN CMST7410 PNP www.centralsemi.com SURFACE MOUNT COMPLEMENTARY LOW VCE(SAT) DESCRIPTION The CENTRAL SEMICONDUCTOR CMST3410, SILICON TRANSISTORS CMST7410 types are complementary silicon transistors manufactured by the epitaxial planar process, epoxy molded in a SUPERmini surface mount package, designed for battery driven, handheld devices requiring high current and

ST3422A N Channel Enhancement Mode MOSFET 6.0A DESCRIPTION The ST3422A is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and no

ST3424 N Channel Enhancement Mode MOSFET 4.0A DESCRIPTION The ST3424 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and note

ST3401M23RG P Channel Enhancement Mode MOSFET -4.0A DESCRIPTION ST3401M23RG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phon

ST3406 N Channel Enhancement Mode MOSFET 5.4A DESCRIPTION ST3406 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and note

ST3401SRG P Channel Enhancement Mode MOSFET -4.0A DESCRIPTION ST3401RSG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone an

ST3426 N Channel Enhancement Mode MOSFET 3.0A DESCRIPTION The ST3426 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and note

ST3413A P Channel Enhancement Mode MOSFET -3.5A DESCRIPTION ST3413A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and n

ST3407SRG P Channel Enhancement Mode MOSFET -3.6A DESCRIPTION ST3407SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone a

ST3400S23RG N Channel Enhancement Mode MOSFET 5.8A DESCRIPTION The ST3400S23RG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phon

ST3421SRG P Channel Enhancement Mode MOSFET -5.0A DESCRIPTION ST3421SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone a

ST3400SRG N Channel Enhancement Mode MOSFET 5.8A DESCRIPTION The ST3400SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and

ST3414A N Channel Enhancement Mode MOSFET 3.0A DESCRIPTION ST3414A is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and noteb

ST3406SRG N Channel Enhancement Mode MOSFET 5.4A DESCRIPTION ST3406SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone an

ST3407S23RG P Channel Enhancement Mode MOSFET -3.6A DESCRIPTION ST3407S23RG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular pho

JST3401 -30V,-4.2A P-Channel Mosfet FEATURES SOT-23 RDS(ON) 63m @VGS=-10V RDS(ON) 67m @VGS=-4.5V RDS(ON) 85m @VGS=-2.5V APPLICATIONS Load/Power Switching Interfacing Switching P-CHANNEL MOSFET MARKING Maximum ratings (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage V 12 GS I -4.2 D Continuou

JST3400 30V,5.8A N-Channel Mosfet FEATURES SOT-23 RDS(ON) 33m @VGS=10V RDS(ON) 39m @VGS=4.5V RDS(ON) 60m @VGS=2.5V APPLICATIONS Load/Power Switching Interfacing Switching MARKING N-CHANNEL MOSFET Maximum ratings (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage V 12 GS I 5.8 D Continuous Drain

JST3415C -20V,-5A P-Channel Mosfet FEATURES SOT-23 RDS(ON) 32m @VGS=-4.5V RDS(ON) 51m @VGS=-2.5V ESD Rating HBM 2.0KV APPLICATIONS PWM Applications Load Switch Power Management MARKING P-CHANNEL MOSFET Maximum ratings (TC=25 unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage V 12 GS I -5 D Continuous Drai

WST3401 P-Ch MOSFET General Description Product Summery The WST3401 is the highest performance trench BVDSS RDSON ID P-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge -30V 44m -5.5A for most of the small power switching and load switch applications . Applications The WST3401 meet the RoHS and Green Product requirement , with full

WST3416 N-Ch MOSFET General Description Product Summery The WST3416 uses advanced trench technology BVDSS RDSON ID to provi de excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.1V. 6.5A 20V 18m This device is suitable for use as a load switch or in PWM applications. It is ESD protected. Applications High Frequency Point-of-Load Synchronous

WST3404A N-Ch MOSFET General Description Product Summery The WST3404A is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON 30V 30m 5.3A and gate charge for most of the synchronous buck converter applications . Applications The WST3404A meet the RoHS and Green Product requirement High Frequency Point-o

WST3400 N-Ch MOSFET General Description Product Summery The WST3400 is the highest performance trench BVDSS RDSON ID N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge 30V 18m 7A for most of the small power switching and load switch applications. Applications The WST3400 meet the RoHS and Green Product requirement with full functio

WST3407A P-Ch MOSFET Product Summery General Description The WST3407A is the highest performance BVDSS RDSON ID trench P-ch MOSFET with extreme high cell density , which provide excellent RDSON and -30V 75m -5.3A gate charge for most of the small power switching and load switch applications. Applications The WST3407A meet the RoHS and Green Product requirement with full

WST3403 P-Ch MOSFET General Description Product Summery The WST3403 is the highest performance BVDSS RDSON ID trench P-Ch MOSFET with extreme high cell density , which provide excellent RDSON and -30V 60m -3.5A gate charge for most of the small power switching and load switch applications. Applications The WST3403 meet the RoHS and Green High Frequency Point-of-Load Sy

WST3415 P-Ch MOSFET General Description Product Summery The WST3415 is the highest performance trench BVDSS RDSON ID P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge -20V 44m -5.5A for most of the small power switching and load switch applications. Applications The WST3415 meet the RoHS and Green Product requirement , with full

WST3400S N-Ch MOSFET General Description Product Summery The WST3400S is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and 30V 27m 5.6A gate charge for most of the small power switching and load switch applications. Applications The WST3400S meet the RoHS and Green Product requirement with full fu

WST3415A P-Ch MOSFET General Description Product Summery The WST3415A is the highest performance BVDSS RDSON ID trench P-ch MOSFET with extreme high cell density , which provide excellent RDSON and -20V 58m -5.3A gate charge for most of the small power switching and load switch applications. Applications The WST3415A meet the RoHS and Green Product requirement , with fu

WST3420 N-Ch MOSFET General Description Product Summery The WST3420 is the highest performance trench BVDSS RDSON ID N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge 20V 45m 4.4A for most of the small power switching and load switch applications. Applications The WST3420 meet the RoHS and Green Product requirement with full functio

WST3407 P-Ch MOSFET Product Summery General Description The WST3407 is the highest performance trench BVDSS RDSON ID P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge -30V 41m -5.8A for most of the small power switching and load switch applications. Applications The WST3407 meet the RoHS and Green Product requirement with full fu

WST3406A N-Ch MOSFET General Description Product Summery The WST3406A is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and 30V 18m 7A gate charge for most of the small power switching and load switch applications. Applications The WST3406A meet the RoHS and Green Product requirement with full func

WST3401A P-Ch MOSFET General Description Product Summery The WST3401A is the highest performance BVDSS RDSON ID trench P-Ch MOSFET with extreme high cell density , which provide excellent RDSON and -30V 48m -5.0A gate charge for most of the small power switching and load switch applications . Applications The WST3401A meet the RoHS and Green Product requirement , with fu

WST3424 N-Ch MOSFET General Description Product Summery The WST3424 is the highest performance trench BVDSS RDSON ID N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge 20V 50m 4.4A for most of the small power switching and load switch applications. Applications The WST3424 meet the RoHS and Green Product requirement with full funct

WST3426 N-Ch MOSFET General Description Product Summery The WST3426 is the highest performance trench BVDSS RDSON ID N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate 20V 60m 3.0A charge for most of the small power switching and load switch applications. Applications The WST3426 meet the RoHS and Green Product requirement with full funct

WST3423 P-Ch MOSFET General Description Product Summery The WST3423 is the highest performance trench BVDSS RDSON ID P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge -20V 100m -2.9A for most of the small power switching and load switch applications. Applications The WST3423 meet the RoHS and Green Product requirement with full fu

WST3408 N-Ch MOSFET General Description Product Summery The WST3408 is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and 30V 26m 5.5A gate charge for most of the synchronous buck converter applications . Applications The WST3408 meet the RoHS and Green Product requirement with full High Frequenc

WST3427 P-Ch MOSFET General Description Product Summery The WST3427 is the highest performance trench BVDSS RDSON ID P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate -20V 140m -2.5A charge for most of the small power switching and load switch applications. Applications The WST3427 meet the RoHS and Green Product requirement with full fu

WST3400A N-Ch MOSFET General Description Product Summery The WST3400A is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and 30V 20m 6.4A gate charge for most of the small power switching and load switch applications. Applications The WST3400A meet the RoHS and Green Product requirement with full fu

WST3414 N-Ch MOSFET General Description Product Summery The WST3414 is the highest performance trench BVDSS RDSON ID N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge 20V 24m 6.0A for most of the small power switching and load switch applications. Applications The WST3414 meet the RoHS and Green Product requirement with full funct

ST3413A www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFET e - 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested 0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/EC APPLICATIONS