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ST34 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: ST34
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-base (Vcb): 30 V
   Tensión colector-emisor (Vce): 30 V
   Tensión emisor-base (Veb): 2 V
   Corriente del colector DC máxima (Ic): 0.025 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 18 MHz
   Capacitancia de salida (Cc): 5 pF
   Ganancia de corriente contínua (hfe): 130
   Paquete / Cubierta: TO5
 

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ST34 Datasheet (PDF)

 0.1. Size:401K  central
cmst3410.pdf pdf_icon

ST34

CMST3410 NPNCMST7410 PNPwww.centralsemi.comSURFACE MOUNTCOMPLEMENTARY LOW VCE(SAT) DESCRIPTION:The CENTRAL SEMICONDUCTOR CMST3410, SILICON TRANSISTORSCMST7410 types are complementary silicon transistors manufactured by the epitaxial planar process, epoxy molded in a SUPERmini surface mount package, designed for battery driven, handheld devices requiring high current and

 0.2. Size:476K  stansontech
st3422a.pdf pdf_icon

ST34

ST3422A N Channel Enhancement Mode MOSFET 6.0A DESCRIPTION The ST3422A is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and no

 0.3. Size:702K  stansontech
st3424.pdf pdf_icon

ST34

ST3424 N Channel Enhancement Mode MOSFET 4.0A DESCRIPTION The ST3424 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and note

 0.4. Size:169K  stansontech
st3401m23rg.pdf pdf_icon

ST34

ST3401M23RG P Channel Enhancement Mode MOSFET -4.0A DESCRIPTION ST3401M23RG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phon

Otros transistores... ST176 , ST250 , ST25C , ST29 , ST30 , ST31 , ST32 , ST33 , BC557 , ST3904 , ST3906 , ST40 , ST400 , ST401 , ST4044 , ST4045 , ST4080 .

History: PUMH30 | OC470K

 

 
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