ST34 Datasheet and Replacement

CMST3410 NPNCMST7410 PNPwww.centralsemi.comSURFACE MOUNTCOMPLEMENTARY LOW VCE(SAT) DESCRIPTION:The CENTRAL SEMICONDUCTOR CMST3410, SILICON TRANSISTORSCMST7410 types are complementary silicon transistors manufactured by the epitaxial planar process, epoxy molded in a SUPERmini surface mount package, designed for battery driven, handheld devices requiring high current and

ST3422A N Channel Enhancement Mode MOSFET 6.0A DESCRIPTION The ST3422A is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and no

ST3424 N Channel Enhancement Mode MOSFET 4.0A DESCRIPTION The ST3424 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and note

ST3401M23RG P Channel Enhancement Mode MOSFET -4.0A DESCRIPTION ST3401M23RG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phon

ST3406 N Channel Enhancement Mode MOSFET 5.4A DESCRIPTION ST3406 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and note

ST3401SRG P Channel Enhancement Mode MOSFET -4.0A DESCRIPTION ST3401RSG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone an

ST3426 N Channel Enhancement Mode MOSFET 3.0A DESCRIPTION The ST3426 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and note

ST3413A P Channel Enhancement Mode MOSFET -3.5A DESCRIPTION ST3413A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and n

ST3407SRG P Channel Enhancement Mode MOSFET -3.6A DESCRIPTION ST3407SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone a

ST3400S23RG N Channel Enhancement Mode MOSFET 5.8A DESCRIPTION The ST3400S23RG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phon

ST3421SRG P Channel Enhancement Mode MOSFET -5.0A DESCRIPTION ST3421SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone a

ST3400SRG N Channel Enhancement Mode MOSFET 5.8A DESCRIPTION The ST3400SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and

ST3414A N Channel Enhancement Mode MOSFET 3.0A DESCRIPTION ST3414A is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and noteb

ST3406SRG N Channel Enhancement Mode MOSFET 5.4A DESCRIPTION ST3406SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone an

ST3407S23RG P Channel Enhancement Mode MOSFET -3.6A DESCRIPTION ST3407S23RG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular pho

JST3401-30V,-4.2AP-Channel MosfetFEATURESSOT-23RDS(ON) 63m @VGS=-10VRDS(ON) 67m @VGS=-4.5VRDS(ON) 85m @VGS=-2.5VAPPLICATIONSLoad/Power SwitchingInterfacing SwitchingP-CHANNEL MOSFETMARKINGMaximum ratings (Ta=25 unless otherwise noted)Parameter Symbol Value UnitDrain-Source Voltage VDS -30VGate-Source Voltage V 12GSI -4.2DContinuou

JST340030V,5.8AN-Channel MosfetFEATURESSOT-23RDS(ON) 33m @VGS=10VRDS(ON) 39m @VGS=4.5VRDS(ON) 60m @VGS=2.5VAPPLICATIONSLoad/Power SwitchingInterfacing SwitchingMARKING N-CHANNEL MOSFETMaximum ratings (Ta=25 unless otherwise noted)Parameter Symbol Value UnitDrain-Source Voltage VDS 30VGate-Source Voltage V 12GSI 5.8DContinuous Drain

JST3415C-20V,-5AP-Channel MosfetFEATURESSOT-23RDS(ON)32m @VGS=-4.5V RDS(ON) 51m @VGS=-2.5VESD Rating: HBM 2.0KVAPPLICATIONSPWM ApplicationsLoad SwitchPower ManagementMARKING P-CHANNEL MOSFETMaximum ratings (TC=25 unless otherwise noted)Parameter Symbol Value UnitDrain-Source Voltage VDS -20VGate-Source Voltage V 12GSI -5DContinuous Drai

WST3401 P-Ch MOSFETGeneral Description Product SummeryThe WST3401 is the highest performance trench BVDSS RDSON ID P-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge -30V 44m -5.5Afor most of the small power switching and load switch applications . Applications The WST3401 meet the RoHS and Green Product requirement , with full

WST3416N-Ch MOSFETGeneral Description Product SummeryThe WST3416 uses advanced trench technology BVDSS RDSON ID to provi de excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.1V. 6.5A20V 18mThis device is suitable for use as a load switch or in PWM applications. It is ESD protected.Applications High Frequency Point-of-Load Synchronous

WST3404AN-Ch MOSFETGeneral Description Product SummeryThe WST3404A is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON 30V 30m 5.3Aand gate charge for most of the synchronous buck converter applications . Applications The WST3404A meet the RoHS and Green Product requirement High Frequency Point-o

WST3400 N-Ch MOSFETGeneral Description Product SummeryThe WST3400 is the highest performance trench BVDSS RDSON ID N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge 30V 18m 7Afor most of the small power switching and load switch applications. Applications The WST3400 meet the RoHS and Green Product requirement with full functio

WST3407AP-Ch MOSFETProduct SummeryGeneral Description The WST3407A is the highest performance BVDSS RDSON ID trench P-ch MOSFET with extreme high cell density , which provide excellent RDSON and -30V 75m -5.3Agate charge for most of the small power switching and load switch applications.Applications The WST3407A meet the RoHS and Green Product requirement with full

WST3403 P-Ch MOSFETGeneral Description Product SummeryThe WST3403 is the highest performance BVDSS RDSON ID trench P-Ch MOSFET with extreme high cell density , which provide excellent RDSON and -30V 60m -3.5Agate charge for most of the small power switching and load switch applications. Applications The WST3403 meet the RoHS and Green High Frequency Point-of-Load Sy

WST3415P-Ch MOSFETGeneral Description Product SummeryThe WST3415 is the highest performance trench BVDSS RDSON ID P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge -20V 44m -5.5Afor most of the small power switching and load switch applications. Applications The WST3415 meet the RoHS and Green Product requirement , with full

WST3400S N-Ch MOSFETGeneral Description Product SummeryThe WST3400S is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and 30V 27m 5.6Agate charge for most of the small power switching and load switch applications. Applications The WST3400S meet the RoHS and Green Product requirement with full fu

WST3415AP-Ch MOSFETGeneral Description Product SummeryThe WST3415A is the highest performance BVDSS RDSON ID trench P-ch MOSFET with extreme high cell density , which provide excellent RDSON and -20V 58m -5.3Agate charge for most of the small power switching and load switch applications. Applications The WST3415A meet the RoHS and Green Product requirement , with fu

WST3420N-Ch MOSFETGeneral Description Product SummeryThe WST3420 is the highest performance trench BVDSS RDSON ID N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge 20V 45m 4.4Afor most of the small power switching and load switch applications.Applications The WST3420 meet the RoHS and Green Product requirement with full functio

WST3407P-Ch MOSFETProduct SummeryGeneral Description The WST3407 is the highest performance trench BVDSS RDSON ID P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge -30V 41m -5.8Afor most of the small power switching and load switch applications. Applications The WST3407 meet the RoHS and Green Product requirement with full fu

WST3406A N-Ch MOSFETGeneral Description Product SummeryThe WST3406A is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and 30V 18m 7Agate charge for most of the small power switching and load switch applications. Applications The WST3406A meet the RoHS and Green Product requirement with full func

WST3401A P-Ch MOSFETGeneral Description Product SummeryThe WST3401A is the highest performance BVDSS RDSON ID trench P-Ch MOSFET with extreme high cell density , which provide excellent RDSON and -30V 48m -5.0Agate charge for most of the small power switching and load switch applications . Applications The WST3401A meet the RoHS and Green Product requirement , with fu

WST3424 N-Ch MOSFETGeneral Description Product SummeryThe WST3424 is the highest performance trench BVDSS RDSON ID N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge 20V 50m 4.4Afor most of the small power switching and load switch applications. Applications The WST3424 meet the RoHS and Green Product requirement with full funct

WST3426 N-Ch MOSFETGeneral Description Product SummeryThe WST3426 is the highest performance trench BVDSS RDSON ID N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate 20V 60m 3.0Acharge for most of the small power switching and load switch applications. Applications The WST3426 meet the RoHS and Green Product requirement with full funct

WST3423 P-Ch MOSFETGeneral Description Product SummeryThe WST3423 is the highest performance trench BVDSS RDSON ID P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge -20V 100m -2.9Afor most of the small power switching and load switch applications. Applications The WST3423 meet the RoHS and Green Product requirement with full fu

WST3408 N-Ch MOSFETGeneral Description Product SummeryThe WST3408 is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and 30V 26m 5.5Agate charge for most of the synchronous buck converter applications . Applications The WST3408 meet the RoHS and Green Product requirement with full High Frequenc

WST3427 P-Ch MOSFETGeneral Description Product SummeryThe WST3427 is the highest performance trench BVDSS RDSON ID P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate -20V 140m -2.5Acharge for most of the small power switching and load switch applications. Applications The WST3427 meet the RoHS and Green Product requirement with full fu

WST3400A N-Ch MOSFETGeneral Description Product SummeryThe WST3400A is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and 30V 20m 6.4Agate charge for most of the small power switching and load switch applications. Applications The WST3400A meet the RoHS and Green Product requirement with full fu

WST3414N-Ch MOSFETGeneral Description Product SummeryThe WST3414 is the highest performance trench BVDSS RDSON ID N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge 20V 24m 6.0Afor most of the small power switching and load switch applications. Applications The WST3414 meet the RoHS and Green Product requirement with full funct

ST3413Awww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS