ST34 PDF and Equivalents Search

 0.1. Size:401K  central

 cmst3410.pdf

CMST3410 NPN CMST7410 PNP www.centralsemi.com SURFACE MOUNT COMPLEMENTARY LOW VCE(SAT) DESCRIPTION The CENTRAL SEMICONDUCTOR CMST3410, SILICON TRANSISTORS CMST7410 types are complementary silicon transistors manufactured by the epitaxial planar process, epoxy molded in a SUPERmini surface mount package, designed for battery driven, handheld devices requiring high current and... See More ⇒

 0.2. Size:476K  stansontech

 st3422a.pdf

ST3422A N Channel Enhancement Mode MOSFET 6.0A DESCRIPTION The ST3422A is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and no... See More ⇒

 0.3. Size:702K  stansontech

 st3424.pdf

ST3424 N Channel Enhancement Mode MOSFET 4.0A DESCRIPTION The ST3424 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and note... See More ⇒

 0.4. Size:169K  stansontech

 st3401m23rg.pdf

ST3401M23RG P Channel Enhancement Mode MOSFET -4.0A DESCRIPTION ST3401M23RG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phon... See More ⇒

 0.5. Size:319K  stansontech

 st3406.pdf

ST3406 N Channel Enhancement Mode MOSFET 5.4A DESCRIPTION ST3406 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and note... See More ⇒

 0.6. Size:207K  stansontech

 st3401srg.pdf

ST3401SRG P Channel Enhancement Mode MOSFET -4.0A DESCRIPTION ST3401RSG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone an... See More ⇒

 0.7. Size:706K  stansontech

 st3426.pdf

ST3426 N Channel Enhancement Mode MOSFET 3.0A DESCRIPTION The ST3426 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and note... See More ⇒

 0.8. Size:262K  stansontech

 st3413a.pdf

ST3413A P Channel Enhancement Mode MOSFET -3.5A DESCRIPTION ST3413A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and n... See More ⇒

 0.9. Size:180K  stansontech

 st3407srg.pdf

ST3407SRG P Channel Enhancement Mode MOSFET -3.6A DESCRIPTION ST3407SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone a... See More ⇒

 0.10. Size:397K  stansontech

 st3400s23rg.pdf

ST3400S23RG N Channel Enhancement Mode MOSFET 5.8A DESCRIPTION The ST3400S23RG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phon... See More ⇒

 0.11. Size:419K  stansontech

 st3421srg.pdf

ST3421SRG P Channel Enhancement Mode MOSFET -5.0A DESCRIPTION ST3421SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone a... See More ⇒

 0.12. Size:543K  stansontech

 st3400srg.pdf

ST3400SRG N Channel Enhancement Mode MOSFET 5.8A DESCRIPTION The ST3400SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and ... See More ⇒

 0.13. Size:661K  stansontech

 st3414a.pdf

ST3414A N Channel Enhancement Mode MOSFET 3.0A DESCRIPTION ST3414A is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and noteb... See More ⇒

 0.14. Size:320K  stansontech

 st3406srg.pdf

ST3406SRG N Channel Enhancement Mode MOSFET 5.4A DESCRIPTION ST3406SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone an... See More ⇒

 0.15. Size:148K  stansontech

 st3407s23rg.pdf

ST3407S23RG P Channel Enhancement Mode MOSFET -3.6A DESCRIPTION ST3407S23RG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular pho... See More ⇒

 0.16. Size:640K  jestek

 jst3401.pdf

JST3401 -30V,-4.2A P-Channel Mosfet FEATURES SOT-23 RDS(ON) 63m @VGS=-10V RDS(ON) 67m @VGS=-4.5V RDS(ON) 85m @VGS=-2.5V APPLICATIONS Load/Power Switching Interfacing Switching P-CHANNEL MOSFET MARKING Maximum ratings (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage V 12 GS I -4.2 D Continuou... See More ⇒

 0.17. Size:799K  jestek

 jst3400.pdf

JST3400 30V,5.8A N-Channel Mosfet FEATURES SOT-23 RDS(ON) 33m @VGS=10V RDS(ON) 39m @VGS=4.5V RDS(ON) 60m @VGS=2.5V APPLICATIONS Load/Power Switching Interfacing Switching MARKING N-CHANNEL MOSFET Maximum ratings (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage V 12 GS I 5.8 D Continuous Drain ... See More ⇒

 0.18. Size:969K  jestek

 jst3415c.pdf

JST3415C -20V,-5A P-Channel Mosfet FEATURES SOT-23 RDS(ON) 32m @VGS=-4.5V RDS(ON) 51m @VGS=-2.5V ESD Rating HBM 2.0KV APPLICATIONS PWM Applications Load Switch Power Management MARKING P-CHANNEL MOSFET Maximum ratings (TC=25 unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage V 12 GS I -5 D Continuous Drai... See More ⇒

 0.19. Size:1030K  winsok

 wst3401.pdf

WST3401 P-Ch MOSFET General Description Product Summery The WST3401 is the highest performance trench BVDSS RDSON ID P-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge -30V 44m -5.5A for most of the small power switching and load switch applications . Applications The WST3401 meet the RoHS and Green Product requirement , with full ... See More ⇒

 0.20. Size:730K  winsok

 wst3416.pdf

WST3416 N-Ch MOSFET General Description Product Summery The WST3416 uses advanced trench technology BVDSS RDSON ID to provi de excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.1V. 6.5A 20V 18m This device is suitable for use as a load switch or in PWM applications. It is ESD protected. Applications High Frequency Point-of-Load Synchronous ... See More ⇒

 0.21. Size:1248K  winsok

 wst3404a.pdf

WST3404A N-Ch MOSFET General Description Product Summery The WST3404A is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON 30V 30m 5.3A and gate charge for most of the synchronous buck converter applications . Applications The WST3404A meet the RoHS and Green Product requirement High Frequency Point-o... See More ⇒

 0.22. Size:958K  winsok

 wst3400.pdf

WST3400 N-Ch MOSFET General Description Product Summery The WST3400 is the highest performance trench BVDSS RDSON ID N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge 30V 18m 7A for most of the small power switching and load switch applications. Applications The WST3400 meet the RoHS and Green Product requirement with full functio... See More ⇒

 0.23. Size:1969K  winsok

 wst3407a.pdf

WST3407A P-Ch MOSFET Product Summery General Description The WST3407A is the highest performance BVDSS RDSON ID trench P-ch MOSFET with extreme high cell density , which provide excellent RDSON and -30V 75m -5.3A gate charge for most of the small power switching and load switch applications. Applications The WST3407A meet the RoHS and Green Product requirement with full ... See More ⇒

 0.24. Size:920K  winsok

 wst3403.pdf

WST3403 P-Ch MOSFET General Description Product Summery The WST3403 is the highest performance BVDSS RDSON ID trench P-Ch MOSFET with extreme high cell density , which provide excellent RDSON and -30V 60m -3.5A gate charge for most of the small power switching and load switch applications. Applications The WST3403 meet the RoHS and Green High Frequency Point-of-Load Sy... See More ⇒

 0.25. Size:1005K  winsok

 wst3415.pdf

WST3415 P-Ch MOSFET General Description Product Summery The WST3415 is the highest performance trench BVDSS RDSON ID P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge -20V 44m -5.5A for most of the small power switching and load switch applications. Applications The WST3415 meet the RoHS and Green Product requirement , with full ... See More ⇒

 0.26. Size:578K  winsok

 wst3400s.pdf

WST3400S N-Ch MOSFET General Description Product Summery The WST3400S is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and 30V 27m 5.6A gate charge for most of the small power switching and load switch applications. Applications The WST3400S meet the RoHS and Green Product requirement with full fu... See More ⇒

 0.27. Size:1604K  winsok

 wst3415a.pdf

WST3415A P-Ch MOSFET General Description Product Summery The WST3415A is the highest performance BVDSS RDSON ID trench P-ch MOSFET with extreme high cell density , which provide excellent RDSON and -20V 58m -5.3A gate charge for most of the small power switching and load switch applications. Applications The WST3415A meet the RoHS and Green Product requirement , with fu... See More ⇒

 0.28. Size:1699K  winsok

 wst3420.pdf

WST3420 N-Ch MOSFET General Description Product Summery The WST3420 is the highest performance trench BVDSS RDSON ID N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge 20V 45m 4.4A for most of the small power switching and load switch applications. Applications The WST3420 meet the RoHS and Green Product requirement with full functio... See More ⇒

 0.29. Size:943K  winsok

 wst3407.pdf

WST3407 P-Ch MOSFET Product Summery General Description The WST3407 is the highest performance trench BVDSS RDSON ID P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge -30V 41m -5.8A for most of the small power switching and load switch applications. Applications The WST3407 meet the RoHS and Green Product requirement with full fu... See More ⇒

 0.30. Size:1103K  winsok

 wst3406a.pdf

WST3406A N-Ch MOSFET General Description Product Summery The WST3406A is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and 30V 18m 7A gate charge for most of the small power switching and load switch applications. Applications The WST3406A meet the RoHS and Green Product requirement with full func... See More ⇒

 0.31. Size:1456K  winsok

 wst3401a.pdf

WST3401A P-Ch MOSFET General Description Product Summery The WST3401A is the highest performance BVDSS RDSON ID trench P-Ch MOSFET with extreme high cell density , which provide excellent RDSON and -30V 48m -5.0A gate charge for most of the small power switching and load switch applications . Applications The WST3401A meet the RoHS and Green Product requirement , with fu... See More ⇒

 0.32. Size:888K  winsok

 wst3424.pdf

WST3424 N-Ch MOSFET General Description Product Summery The WST3424 is the highest performance trench BVDSS RDSON ID N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge 20V 50m 4.4A for most of the small power switching and load switch applications. Applications The WST3424 meet the RoHS and Green Product requirement with full funct... See More ⇒

 0.33. Size:745K  winsok

 wst3426.pdf

WST3426 N-Ch MOSFET General Description Product Summery The WST3426 is the highest performance trench BVDSS RDSON ID N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate 20V 60m 3.0A charge for most of the small power switching and load switch applications. Applications The WST3426 meet the RoHS and Green Product requirement with full funct... See More ⇒

 0.34. Size:798K  winsok

 wst3423.pdf

WST3423 P-Ch MOSFET General Description Product Summery The WST3423 is the highest performance trench BVDSS RDSON ID P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge -20V 100m -2.9A for most of the small power switching and load switch applications. Applications The WST3423 meet the RoHS and Green Product requirement with full fu... See More ⇒

 0.35. Size:601K  winsok

 wst3408.pdf

WST3408 N-Ch MOSFET General Description Product Summery The WST3408 is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and 30V 26m 5.5A gate charge for most of the synchronous buck converter applications . Applications The WST3408 meet the RoHS and Green Product requirement with full High Frequenc... See More ⇒

 0.36. Size:761K  winsok

 wst3427.pdf

WST3427 P-Ch MOSFET General Description Product Summery The WST3427 is the highest performance trench BVDSS RDSON ID P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate -20V 140m -2.5A charge for most of the small power switching and load switch applications. Applications The WST3427 meet the RoHS and Green Product requirement with full fu... See More ⇒

 0.37. Size:1462K  winsok

 wst3400a.pdf

WST3400A N-Ch MOSFET General Description Product Summery The WST3400A is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and 30V 20m 6.4A gate charge for most of the small power switching and load switch applications. Applications The WST3400A meet the RoHS and Green Product requirement with full fu... See More ⇒

 0.38. Size:770K  winsok

 wst3414.pdf

WST3414 N-Ch MOSFET General Description Product Summery The WST3414 is the highest performance trench BVDSS RDSON ID N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge 20V 24m 6.0A for most of the small power switching and load switch applications. Applications The WST3414 meet the RoHS and Green Product requirement with full funct... See More ⇒

 0.39. Size:869K  cn vbsemi

 st3413a.pdf

ST3413A www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFET e - 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested 0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/EC APPLICATIONS... See More ⇒