ST3906 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ST3906
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.6 W
Tensión colector-base (Vcb): 40 V
Tensión colector-emisor (Vce): 40 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 250 MHz
Capacitancia de salida (Cc): 4.5 pF
Ganancia de corriente contínua (hFE): 100
Encapsulados: TO92
Búsqueda de reemplazo de ST3906
- Selecciónⓘ de transistores por parámetros
ST3906 datasheet
0.1. Size:52K philips
pmst3906 3.pdf 
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D187 PMST3906 PNP switching transistor 1999 Apr 22 Product specification Supersedes data of 1997 May 27 Philips Semiconductors Product specification PNP switching transistor PMST3906 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 40 V). 1 base 2 emitter APPLICATIONS 3 collector Swit
0.2. Size:77K philips
pmst3906.pdf
PMST3906 40 V, 200 mA PNP switching transistor Rev. 05 29 April 2009 Product data sheet 1. Product profile 1.1 General description PNP switching transistor in a SOT323 (SC-70) very small Surface-Mounted Device (SMD) plastic package. NPN complement PMST3904. 1.2 Features Collector current IC -200 mA Collector-emitter voltage VCEO -40 V Very small SMD plastic package 1
0.3. Size:107K fairchild semi
kst3906.pdf
September 2010 KST3906 PNP Epitaxial Silicon Transistor Features General Purpose Transistor 3 Marking 2 2A SOT-23 1 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Ta = 25 C unless otherwise noted Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current -200 mA PC Collec
0.4. Size:77K nxp
pmst3906.pdf
PMST3906 40 V, 200 mA PNP switching transistor Rev. 05 29 April 2009 Product data sheet 1. Product profile 1.1 General description PNP switching transistor in a SOT323 (SC-70) very small Surface-Mounted Device (SMD) plastic package. NPN complement PMST3904. 1.2 Features Collector current IC -200 mA Collector-emitter voltage VCEO -40 V Very small SMD plastic package 1
0.5. Size:47K samsung
kst3906.pdf
KST3906 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage VEBO -5 V Collector Current IC -200 mA Collector Dissipation PC 350 mW Storage Temperature TSTG 150 1. Base 2. Emitter 3. Collector ELECTRI
0.7. Size:121K rohm
umt3906 sst3906 mmst3906.pdf
UMT3906/SST3906/MMST3906 Transistors PNP General Purpose Transistor UMT3906 / SST3906 / MMST3906 Dimensions (Unit mm) Features UMT3906 1) BVCEO > -40V (IC= -1mA) 2) Complements the T3904/SST3904/MMST3909. 3) Low capacitance. (1) Emitter (2) Base ROHM UMT3 EIAJ SC-70 (3) Collector Package, marking, and packaging specifications SST3906 Type UMT3906 SST3906 MMST
0.8. Size:402K central
cmst3904 cmst3906.pdf
CMST3904 NPN CMST3906 PNP www.centralsemi.com SURFACE MOUNT DESCRIPTION COMPLEMENTARY The CENTRAL SEMICONDUCTOR CMST3904, SILICON TRANSISTORS CMST3906 types are complementary silicon transistors manufactured by the epitaxial planar process, epoxy molded in a SUPERmini surface mount package, designed for small signal general purpose amplifier and switching applications. MAR
0.9. Size:128K diodes
dst3906dj.pdf
DST3906DJ DUAL 40V PNP SURFACE MOUNT TRANSISTOR Features Mechanical Data VCEO = -40V Case SOT-963 Case Material Molded Plastic, Green Molding Compound. IC = -200mA UL Flammability Classification Rating 94V-0 Epitaxial Planar Die Construction Moisture Sensitivity Level 1 per J-STD-020 Ideally Suited for Automated Assembly Processes Termi
0.10. Size:399K diodes
mmst3906.pdf
MMST3906 40V PNP SMALL SIGNAL TRANSISTOR IN SOT323 Features Mechanical Data BVCEO > -40V Case SOT323 Case Material Molded Plastic. Green Molding Compound. IC = -200mA Collector Current UL Flammability Rating 94V-0 Epitaxial Planar Die Construction Moisture Sensitivity Level 1 per J-STD-020 Ultra-Small Surface Mount Package Terminals
0.11. Size:197K mcc
mmst3906 sot-323.pdf
MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth MMST3906 Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Epitaxial Planar Die Construction PNP Small Signal Complementary NPN Type available (MMST3904) Ultra-small surface mount package Transistors Marking K5N Lead Free Finish/RoHS Compliant ("P" Suff
0.12. Size:172K onsemi
nst3906dxv6t1 nst3906dxv6t5.pdf
NST3906DXV6T1, NST3906DXV6T5 Dual General Purpose Transistor The NST3906DXV6T1 device is a spin- off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general http //onsemi.com purpose amplifier applications and is housed in the SOT- 563 six-leaded surface mount package. By putting two discrete devices in (3) (2) (1) one package, this device is ideal for low-power
0.13. Size:92K onsemi
nst3906f3t5g.pdf
NST3906F3T5G PNP General Purpose Transistor The NST3906F3T5G device is a spin-off of our popular SOT-23/SOT-323/SOT-563/SOT-963 three-leaded device. It is designed for general purpose amplifier applications and is housed in http //onsemi.com the SOT-1123 surface mount package. This device is ideal for low-power surface mount applications where board space is at a premium. COLLECTOR 3
0.14. Size:96K onsemi
nst3906dxv6t1-5.pdf
NST3906DXV6T1, NST3906DXV6T5 Dual General Purpose Transistor The NST3906DXV6T1 device is a spin- off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general http //onsemi.com purpose amplifier applications and is housed in the SOT- 563 six-leaded surface mount package. By putting two discrete devices in (3) (2) (1) one package, this device is ideal for low-power
0.15. Size:96K onsemi
nst3906dxv6t1g.pdf
NST3906DXV6T1, NST3906DXV6T5 Dual General Purpose Transistor The NST3906DXV6T1 device is a spin- off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general http //onsemi.com purpose amplifier applications and is housed in the SOT- 563 six-leaded surface mount package. By putting two discrete devices in (3) (2) (1) one package, this device is ideal for low-power
0.16. Size:96K onsemi
nst3906dp6.pdf
NST3906DP6T5G Dual General Purpose Transistor The NST3906DP6T5G device is a spin-off of our popular SOT-23/SOT-323/SOT-563 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-963 six-leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low-power surface mount http //onsemi.com applicat
0.17. Size:96K onsemi
nst3906dp6t5g.pdf
NST3906DP6T5G Dual General Purpose Transistor The NST3906DP6T5G device is a spin-off of our popular SOT-23/SOT-323/SOT-563 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-963 six-leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low-power surface mount http //onsemi.com applicat
0.18. Size:113K onsemi
nst3906mx2.pdf
DATA SHEET www.onsemi.com General Purpose Transistor COLLECTOR 3 PNP Silicon 1 NST3906MX2 BASE Features 2 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS EMITTER Compliant 3 MAXIMUM RATINGS 1 Rating Symbol Value Unit 2 Collector-Emitter Voltage VCEO -40 Vdc X2DFN3 (1.0 x 0.6 mm) CASE 714AC Collector-Base Voltage VCBO -40 Vdc Emitter-Base Voltage VEBO -5.0
0.19. Size:222K onsemi
kst3906.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
0.20. Size:780K jiangsu
mmst3906.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors MMST3906 TRANSISTOR (PNP) SOT 323 FEATURES Complementary to MMST3904 MARKING K5N MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 1. BASE V Collector-Base Voltage -40 V CBO 2. EMITTER V Collector-Emitter Voltage -40 V CEO 3. COLLECTOR V Emitter-Base
0.21. Size:363K htsemi
mmst3906.pdf
MMST3906 TRANSISTOR(PNP) SOT 323 FEATURES Complementary to MMST3904 MARKING K5N MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 1. BASE V Collector-Base Voltage -40 V CBO 2. EMITTER V Collector-Emitter Voltage -40 V CEO 3. COLLECTOR V Emitter-Base Voltage -5 V EBO IC Collector Current -200 mA P Collector Power Dissipation 200 m
0.22. Size:387K lrc
lnst3906f3t5g.pdf
LESHAN RADIO COMPANY, LTD. PNP General Purpose Transistor LNST3906F3T5G S-LNST3906F3T5G TheLNST3906F3T5G device is a spin-off of our popular SOT-23/SOT-323/SOT-563/SOT-963 three-leaded device. It is designed for general purpose amplifier applications and is housed in COLLECTOR the SOT-1123 surface mount package. This device is ideal for 3 low-power surface mount applications where bo
0.23. Size:792K kexin
mmst3906.pdf
SMD Type Transistors PNP Transistors MMST3906 (MMST3906) Features Epitaxial planar die construction Complementary to MMST3904 1.Base 2.Emitter 3.Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -40 Collector - Emitter Voltage VCEO -40 V Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -20
0.24. Size:567K kexin
kmst3906.pdf
SMD Type Transistors PNP Transistors MMST3906 (MMST3906) Features Epitaxial planar die construction Complementary to MMST3904 1.Base 2.Emitter 3.Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -40 Collector - Emitter Voltage VCEO -40 V Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -20
0.25. Size:1735K cn yongyutai
mmst3906.pdf
MMST3906 SOT-323 Plastic-Encapsulate Transistors MMST3906 TRANSISTOR (PNP) SOT 323 FEATURES Complementary to MMST3904 MARKING K5N MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 1. BASE V Collector-Base Voltage -40 V CBO 2. EMITTER V Collector-Emitter Voltage -40 V CEO 3. COLLECTOR V Emitter-Base Voltage -5 V EBO IC Collector C
Otros transistores... ST25C
, ST29
, ST30
, ST31
, ST32
, ST33
, ST34
, ST3904
, 2N2222A
, ST40
, ST400
, ST401
, ST4044
, ST4045
, ST4080
, ST4081
, ST41
.
