DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D187PMST3906PNP switching transistor1999 Apr 22Product specificationSupersedes data of 1997 May 27Philips Semiconductors Product specificationPNP switching transistor PMST3906FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 40 V).1 base2 emitterAPPLICATIONS3 collector Swit

PMST390640 V, 200 mA PNP switching transistorRev. 05 29 April 2009 Product data sheet1. Product profile1.1 General descriptionPNP switching transistor in a SOT323 (SC-70) very small Surface-Mounted Device (SMD)plastic package.NPN complement: PMST3904.1.2 Features Collector current: IC -200 mA Collector-emitter voltage: VCEO -40 V Very small SMD plastic package1

September 2010KST3906PNP Epitaxial Silicon TransistorFeatures General Purpose Transistor3Marking22ASOT-2311. Base 2. Emitter 3. CollectorAbsolute Maximum Ratings Ta = 25C unless otherwise notedSymbol Parameter Value UnitVCBO Collector-Base Voltage -40 VVCEO Collector-Emitter Voltage -40 VVEBO Emitter-Base Voltage -5 VIC Collector Current -200 mAPC Collec

PMST390640 V, 200 mA PNP switching transistorRev. 05 29 April 2009 Product data sheet1. Product profile1.1 General descriptionPNP switching transistor in a SOT323 (SC-70) very small Surface-Mounted Device (SMD)plastic package.NPN complement: PMST3904.1.2 Features Collector current: IC -200 mA Collector-emitter voltage: VCEO -40 V Very small SMD plastic package1

KST3906 PNP EPITAXIAL SILICON TRANSISTORGENERAL PURPOSE TRANSISTORSOT-23ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage VEBO -5 V Collector Current IC -200 mA Collector Dissipation PC 350 mW Storage Temperature TSTG 150 1. Base 2. Emitter 3. CollectorELECTRI

SST3906DatasheetPNP General Purpose TransistorlOutlinel SOT-23 Parameter Value VCEO-40VIC-200mASST3lFeatures lInner circuitl l1)BVCEO-40V(IC=-1mA)2)Complements the SST39043)Low capacitance.lApplicationlAUDIO FREQUENCY SMALL SIGNAL AMPLIFIER

UMT3906/SST3906/MMST3906 Transistors PNP General Purpose Transistor UMT3906 / SST3906 / MMST3906 Dimensions (Unit : mm) Features UMT39061) BVCEO > -40V (IC= -1mA) 2) Complements the T3904/SST3904/MMST3909. 3) Low capacitance. (1) Emitter(2) BaseROHM : UMT3EIAJ : SC-70 (3) Collector Package, marking, and packaging specifications SST3906 Type UMT3906 SST3906 MMST

CMST3904 NPNCMST3906 PNPwww.centralsemi.comSURFACE MOUNTDESCRIPTION:COMPLEMENTARYThe CENTRAL SEMICONDUCTOR CMST3904, SILICON TRANSISTORSCMST3906 types are complementary silicon transistors manufactured by the epitaxial planar process, epoxy molded in a SUPERmini surface mount package, designed for small signal general purpose amplifier and switching applications.MAR

DST3906DJDUAL 40V PNP SURFACE MOUNT TRANSISTOR Features Mechanical Data VCEO = -40V Case: SOT-963 Case Material: Molded Plastic, Green Molding Compound. IC = -200mA UL Flammability Classification Rating 94V-0 Epitaxial Planar Die Construction Moisture Sensitivity: Level 1 per J-STD-020 Ideally Suited for Automated Assembly Processes Termi

MMST3906 40V PNP SMALL SIGNAL TRANSISTOR IN SOT323 Features Mechanical Data BVCEO > -40V Case: SOT323 Case Material: Molded Plastic. Green Molding Compound. IC = -200mA Collector Current UL Flammability Rating 94V-0 Epitaxial Planar Die Construction Moisture Sensitivity: Level 1 per J-STD-020 Ultra-Small Surface Mount Package Terminals:

MCCMicro Commercial ComponentsTM20736 Marilla Street Chatsworth MMST3906Micro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Epitaxial Planar Die ConstructionPNP Small Signal Complementary NPN Type available (MMST3904) Ultra-small surface mount packageTransistors Marking : K5N Lead Free Finish/RoHS Compliant ("P" Suff

NST3906DXV6T1,NST3906DXV6T5Dual General PurposeTransistorThe NST3906DXV6T1 device is a spin- off of our popularSOT-23/SOT-323 three-leaded device. It is designed for generalhttp://onsemi.compurpose amplifier applications and is housed in the SOT- 563six-leaded surface mount package. By putting two discrete devices in(3) (2) (1)one package, this device is ideal for low-power

NST3906F3T5GPNP General PurposeTransistorThe NST3906F3T5G device is a spin-off of our popularSOT-23/SOT-323/SOT-563/SOT-963 three-leaded device. It isdesigned for general purpose amplifier applications and is housed inhttp://onsemi.comthe SOT-1123 surface mount package. This device is ideal forlow-power surface mount applications where board space is at apremium. COLLECTOR3

NST3906DXV6T1,NST3906DXV6T5Dual General PurposeTransistorThe NST3906DXV6T1 device is a spin- off of our popularSOT-23/SOT-323 three-leaded device. It is designed for generalhttp://onsemi.compurpose amplifier applications and is housed in the SOT- 563six-leaded surface mount package. By putting two discrete devices in(3) (2) (1)one package, this device is ideal for low-power

NST3906DXV6T1,NST3906DXV6T5Dual General PurposeTransistorThe NST3906DXV6T1 device is a spin- off of our popularSOT-23/SOT-323 three-leaded device. It is designed for generalhttp://onsemi.compurpose amplifier applications and is housed in the SOT- 563six-leaded surface mount package. By putting two discrete devices in(3) (2) (1)one package, this device is ideal for low-power

NST3906DP6T5GDual General PurposeTransistorThe NST3906DP6T5G device is a spin-off of our popularSOT-23/SOT-323/SOT-563 three-leaded device. It is designed forgeneral purpose amplifier applications and is housed in the SOT-963six-leaded surface mount package. By putting two discrete devices inone package, this device is ideal for low-power surface mounthttp://onsemi.comapplicat

NST3906DP6T5GDual General PurposeTransistorThe NST3906DP6T5G device is a spin-off of our popularSOT-23/SOT-323/SOT-563 three-leaded device. It is designed forgeneral purpose amplifier applications and is housed in the SOT-963six-leaded surface mount package. By putting two discrete devices inone package, this device is ideal for low-power surface mounthttp://onsemi.comapplicat

DATA SHEETwww.onsemi.comGeneral Purpose Transistor COLLECTOR3PNP Silicon1NST3906MX2BASEFeatures2 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSEMITTERCompliant3MAXIMUM RATINGS1Rating Symbol Value Unit2Collector-Emitter Voltage VCEO -40 VdcX2DFN3 (1.0 x 0.6 mm)CASE 714ACCollector-Base Voltage VCBO -40 VdcEmitter-Base Voltage VEBO -5.0

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate TransistorsMMST3906 TRANSISTOR (PNP)SOT323 FEATURES Complementary to MMST3904MARKING:K5NMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 1. BASEV Collector-Base Voltage -40 V CBO2. EMITTERV Collector-Emitter Voltage -40 V CEO3. COLLECTORV Emitter-Base

MMST3906TRANSISTOR(PNP)SOT323 FEATURES Complementary to MMST3904 MARKING:K5N MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 1. BASE V Collector-Base Voltage -40 V CBO2. EMITTER V Collector-Emitter Voltage -40 V CEO3. COLLECTOR V Emitter-Base Voltage -5 V EBOIC Collector Current -200 mA P Collector Power Dissipation 200 m

LESHAN RADIO COMPANY, LTD.PNP General PurposeTransistorLNST3906F3T5GS-LNST3906F3T5GTheLNST3906F3T5G device is a spin-off of our popularSOT-23/SOT-323/SOT-563/SOT-963 three-leaded device. It isdesigned for general purpose amplifier applications and is housed inCOLLECTORthe SOT-1123 surface mount package. This device is ideal for3low-power surface mount applications where bo

SMD Type TransistorsPNP TransistorsMMST3906 (MMST3906) Features Epitaxial planar die construction Complementary to MMST39041.Base2.Emitter3.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -40 Collector - Emitter Voltage VCEO -40 V Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -20

SMD Type TransistorsPNP TransistorsMMST3906 (MMST3906) Features Epitaxial planar die construction Complementary to MMST39041.Base2.Emitter3.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -40 Collector - Emitter Voltage VCEO -40 V Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -20

MMST3906SOT-323 Plastic-Encapsulate Transistors MMST3906 TRANSISTOR (PNP) SOT323 FEATURES Complementary to MMST3904 MARKING:K5N MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 1. BASE V Collector-Base Voltage -40 V CBO2. EMITTER V Collector-Emitter Voltage -40 V CEO3. COLLECTOR V Emitter-Base Voltage -5 V EBOIC Collector C