2N52. Equivalente. Reemplazo. Todos los transistores. Hoja de especificaciones. Principales características

2N52 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N52

Material: Ge

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.12 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Corriente del colector DC máxima (Ic): 0.008 A

Temperatura operativa máxima (Tj): 60 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 2.1 MHz

Ganancia de corriente contínua (hFE): 1.5

Encapsulados: X016

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2N52 datasheet

0.1. Size:277K motorola
2n5209 2n5210.pdf pdf_icon

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N5209/D Amplifier Transistors NPN Silicon 2N5209 2N5210 COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS CASE 29 04, STYLE 1 Rating Symbol Value Unit TO 92 (TO 226AA) Collector Emitter Voltage VCEO 50 Vdc Collector Base Voltage VCBO 50 Vdc Emitter Base Voltage VEBO 4.0 Vdc Collector Current C

0.2. Size:297K motorola
2n5208.pdf pdf_icon

0.3. Size:208K international rectifier
2n681 2n5204.pdf pdf_icon

0.4. Size:279K fairchild semi
2n5223.pdf pdf_icon

0.5. Size:26K fairchild semi
2n5246.pdf pdf_icon

2N5246 N-Channel RF Amplifier This device is designed for HF/VHF mixer/amplifier and applications where process 50is not adequate. Sufficient gain and low noise for sensitive receivers. Sourced from process 90. TO-92 1 1. Gate 2. Source 3. Drain Absolute Maximum Ratings* Ta=25 C unless otherwise noted Symbol Parameter Ratings Units VDG Drain-Gate Voltage 30 V VGS Gate-So

0.6. Size:90K fairchild semi
2n5210 mmbt5210.pdf pdf_icon

2N5210/MMBT5210 NPN General Purpose Amplifier C This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1 A to 50 mA. E C TO-92 BE B SOT-23 Mark 3M Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 50 V VCBO Collector-Base Voltage 50 V VEBO Emitter-B

0.7. Size:26K fairchild semi
2n5245.pdf pdf_icon

2N5245 N-Channel RF Amplifier This device is designed for HF/VHF mixer/amplifier and applications where process 50is not adequate. Sufficient gain and low noise for sensitive receivers. Sourced from process 90. TO-92 1 1. Gate 2. Source 3. Drain Absolute Maximum Ratings* Ta=25 C unless otherwise noted Symbol Parameter Ratings Units VDG Drain-Gate Voltage 30 V VGS Gate-So

0.8. Size:21K samsung
2n5210.pdf pdf_icon

2N5210 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR TO-92 Collector-Emitter Voltage VCEO= 50V Collector Dissipation PC (max)=625mW ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 4.5 V Collector Current IC 50 mA Collector Dissipation PC 625 mW Jun

0.9. Size:69K central
2n5209 2n5210.pdf pdf_icon

DATA SHEET 2N5209 2N5210 NPN SILICON TRANSISTOR TO-92 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5209 and 2N5210 are silicon NPN Transistors, manufactured by the epitaxial planar process, designed for applications requiring high gain and low noise. MAXIMUM RATINGS (TA=25 C) SYMBOL UNITS Collector-Emitter Voltage VCEO 50 V Collector-Base Voltage VCBO 50 V Emitter-Base V

0.10. Size:57K central
2n5232a.pdf pdf_icon

145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824

0.11. Size:71K central
2n5294 2n5296 2n5298.pdf pdf_icon

145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824

0.12. Size:113K semelab
2n5237s.pdf pdf_icon

SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N5237S Low Power, High Voltage. Hermetic TO-39 Metal Package. Ideally Suited For Switching And General Purpose Applications. Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise stated) VCBO Collector Base Voltage 150V VCEO Collector Emitter Voltage 120V VEBO Emitter Base

0.13. Size:11K semelab
2n5253.pdf pdf_icon

2N5253 Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 300V dia. IC = 1A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 3

0.14. Size:11K semelab
2n5252.pdf pdf_icon

2N5252 Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 300V dia. IC = 1A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 3

0.15. Size:343K cdil
2n5294 96 98.pdf pdf_icon

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package 2N5294, 2N5296, 2N5298 2N5294, 5296, 5298 NPN PLASTIC POWER TRANSISTORS Medium Power Switching and Amplifier Applications PIN CONFIGURATION 4 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 1 2 3 C DIM MIN. MAX. B E F A 14.42 16.51 B 9.63 10.67 C 3.56 4.83 D0.90 E

0.16. Size:303K cdil
2n5232 a.pdf pdf_icon

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N5232 2N5232A TO-92 Plastic Package ABSOLUTE MAXIMUM RATINGS(Ta=25 C unless specified otherwise) DESCRIPTION SYMBOL VALUE UNITS VCEO Collector Emitter Voltage 50 V VCBO Collector Base Voltage 70 V VEBO Emitter Base Voltage 5V IC Collector Current 1

0.17. Size:39K jmnic
2n5241.pdf pdf_icon

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5241 DESCRIPTION With TO-3 package High breakdown voltage APPLICATIONS Switching regulator Inverters Solenoid and relay drivers Motor controls PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol MAXIMUN RATINGS(Ta=25 ) SYMBOL PA

0.18. Size:100K jmnic
2n5264.pdf pdf_icon

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5264 DESCRIPTION With TO-3 package High speed switching High reliability APPLICATIONS Switching regulators DC-DC convertor Solid state relay General purpose power amplifiers PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol MA

0.19. Size:106K jmnic
2n5293 2n5295 2n5297.pdf pdf_icon

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5293 2N5295 2N5297 DESCRIPTION With TO-220 package High power dissipation APPLICATIONS Power amplifier and medium speed switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VA

0.20. Size:127K jmnic
2n5294 2n5296 2n5298.pdf pdf_icon

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5294 2N5296 2N5298 DESCRIPTION With TO-220 package High power dissipation APPLICATIONS Power amplifier and medium speed switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VAL

0.21. Size:41K microelectronics
2n5225.pdf pdf_icon

0.22. Size:55K microelectronics
2n5232.pdf pdf_icon

0.23. Size:43K microelectronics
2n5249.pdf pdf_icon

0.24. Size:100K microsemi
2n5238s.pdf pdf_icon

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Website http //www.microsemi.com NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/394 DEVICES LEVELS JAN 2N4150 2N5237 2N5238 JANTX 2N4150S 2N5237S 2N5238S JANTXV JANS ABSOLUTE MAXIMUM RATINGS (TC = +25 C unless otherwise noted) 2N4150 2N5237 2N5238

0.25. Size:145K semicoa
2n5237.pdf pdf_icon

Data Sheet No. 2N5237 Generic Part Number Type 2N5237 2N5237 Geometry 3111 Polarity NPN REF MIL-PRF-19500/394 Qual Level JAN - JANTXV Features Silicon power transistor for use in high speed switching applications. Housed in a TO-39 case. Also available in chip form using the 3111 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/394 which Semi

0.26. Size:168K aeroflex
2n5240.pdf pdf_icon

NPN Power Silicon Transistor 2N5240 Features High Voltage Vceo(sus) = 300 V (min) Wide Area of Safe Operation Designed for use in series regulators, power amplifiers, inverters, deflection circuits, switching regulators, and high-voltage bridge amplifiers. TO-3 (TO-204AA) Package Maximum Ratings (TA = 25 C) Ratings Symbol Value Units Collector - Base Voltage VCBO

0.27. Size:122K aeroflex
2n4150 2n5237 2n5238.pdf pdf_icon

NPN Power Silicon Transistor 2N4150, 2N5237 & 2N5238 Features Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/384 TO-5 Package Maximum Ratings Ratings Symbol 2N4150 2N5237 2N5238 Units Collector - Emitter Voltage VCEO 70 120 170 Vdc Collector - Base Voltage VCBO 100 150 200 Vdc Emitter - Base Voltage VEBO 10.0 Vdc Collector Current IC 4.0 Adc Total Power Dissipation @

0.28. Size:1285K sprague
2n5172 2n5174 2n5209 2n5210 2n5219 2n5220 2n5221 2n5223 2n5225 2n5226 2n5228 2n5232 2n5232a 2n5249 2n5249a 2n5305.pdf pdf_icon

0.29. Size:116K inchange semiconductor
2n5241.pdf pdf_icon

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5241 DESCRIPTION With TO-3 package High breakdown voltage APPLICATIONS Switching regulator Inverters Solenoid and relay drivers Motor controls PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector MAXIMUN RATINGS(Ta=25 )

0.30. Size:117K inchange semiconductor
2n5239.pdf pdf_icon

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5239 DESCRIPTION With TO-3 package High breakdown voltage High power dissipation APPLICATIONS Switching regulator Inverters Power amplifiers Deflection circuits High-voltage bridge amplifiers PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-

0.31. Size:116K inchange semiconductor
2n5264.pdf pdf_icon

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5264 DESCRIPTION With TO-3 package High speed switching High reliability APPLICATIONS Switching regulators DC-DC convertor Solid state relay General purpose power amplifiers PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Coll

0.32. Size:58K inchange semiconductor
2n5298.pdf pdf_icon

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N5298 DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS) = 60V(Min) Collector-Emitter Saturation Voltage- VCE(sat) = 1.0V(Max)@ IC= 1.5A, IB= 0.15A Wide Area of Safe Operation APPLICATIONS Designed for medium power switching amplifier applications. ABSOLUTE MAXIMUM RATING

0.33. Size:39K inchange semiconductor
2n5240.pdf pdf_icon

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N5240 DESCRIPTION High Voltage- VCEO(SUS)= 300V(Min) Wide Area of Safe Operation APPLICATIONS Designed for use in series regulators, power amplifiers, inverters, deflection circuits, switching regulators, and high-voltage bridge amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL

0.34. Size:61K inchange semiconductor
2n5293 2n5295 2n5297.pdf pdf_icon

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5293 2N5295 2N5297 DESCRIPTION With TO-220 package High power dissipation APPLICATIONS Power amplifier and medium speed switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIO

0.35. Size:184K inchange semiconductor
2n5202.pdf pdf_icon

isc Silicon NPN Power Transistor 2N5202 DESCRIPTION Collector-emitter sustaining voltage V = 90V(Min) CEO(SUS) High saturation voltage Wide area of safe operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high-current, high-speed switching circuits such as low-distortion power amplifiers,oscillators,

0.36. Size:121K inchange semiconductor
2n5294 2n5296 2n5298.pdf pdf_icon

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5294 2N5296 2N5298 DESCRIPTION With TO-220 package High power dissipation APPLICATIONS Power amplifier and medium speed switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIO

0.37. Size:187K inchange semiconductor
2n5297.pdf pdf_icon

isc Silicon NPN Power Transistor 2N5297 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 60V(Min) CEO(SUS) Collector-Emitter Saturation Voltage- V = 1.0V(Max)@ I = 1.5A, I = 0.15A CE(sat) C B Wide Area of Safe Operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for medium power

Otros transistores... 2N519 , 2N5190 , 2N5191 , 2N5192 , 2N5193 , 2N5194 , 2N5195 , 2N519A , 2SA1943 , 2N520 , 2N5200 , 2N5201 , 2N5202 , 2N5203 , 2N5208 , 2N5209 , 2N520A .