2N520 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N520
Material: Ge
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15 W
Tensión colector-base (Vcb): 15 V
Tensión emisor-base (Veb): 10 V
Corriente del colector DC máxima (Ic): 0.025 A
Temperatura operativa máxima (Tj): 85 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 1 MHz
Ganancia de corriente contínua (hfe): 40
Paquete / Cubierta: TO5
Búsqueda de reemplazo de transistor bipolar 2N520
2N520 Datasheet (PDF)
2n5209 2n5210.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N5209/DAmplifier TransistorsNPN Silicon2N52092N5210COLLECTOR32BASE1EMITTER123MAXIMUM RATINGSCASE 2904, STYLE 1Rating Symbol Value UnitTO92 (TO226AA)CollectorEmitter Voltage VCEO 50 VdcCollectorBase Voltage VCBO 50 VdcEmitterBase Voltage VEBO 4.0 VdcCollector Current C
2n5209 2n5210.pdf
DATA SHEET2N5209 2N5210 NPN SILICON TRANSISTOR TO-92 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5209 and 2N5210 are silicon NPN Transistors, manufactured by the epitaxial planar process, designed for applications requiring high gain and low noise. MAXIMUM RATINGS (TA=25C) SYMBOL UNITS Collector-Emitter Voltage VCEO 50 V Collector-Base Voltage VCBO 50 V Emitter-Base V
2n5172 2n5174 2n5209 2n5210 2n5219 2n5220 2n5221 2n5223 2n5225 2n5226 2n5228 2n5232 2n5232a 2n5249 2n5249a 2n5305.pdf
2n5202.pdf
isc Silicon NPN Power Transistor 2N5202DESCRIPTIONCollector-emitter sustaining voltage V = 90V(Min)CEO(SUS)High saturation voltageWide area of safe operationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high-current, high-speed switchingcircuits such as:low-distortion power amplifiers,oscillators,
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
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