2N520 Specs and Replacement
Type Designator: 2N520
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 15 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 0.025 A
Max. Operating Junction Temperature (Tj): 85 °C
Electrical Characteristics
Transition Frequency (ft): 1 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO5
2N520 Substitution
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2N520 datasheet
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N5209/D Amplifier Transistors NPN Silicon 2N5209 2N5210 COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS CASE 29 04, STYLE 1 Rating Symbol Value Unit TO 92 (TO 226AA) Collector Emitter Voltage VCEO 50 Vdc Collector Base Voltage VCBO 50 Vdc Emitter Base Voltage VEBO 4.0 Vdc Collector Current C... See More ⇒
DATA SHEET 2N5209 2N5210 NPN SILICON TRANSISTOR TO-92 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5209 and 2N5210 are silicon NPN Transistors, manufactured by the epitaxial planar process, designed for applications requiring high gain and low noise. MAXIMUM RATINGS (TA=25 C) SYMBOL UNITS Collector-Emitter Voltage VCEO 50 V Collector-Base Voltage VCBO 50 V Emitter-Base V... See More ⇒
Detailed specifications: 2N5190, 2N5191, 2N5192, 2N5193, 2N5194, 2N5195, 2N519A, 2N52, TIP122, 2N5200, 2N5201, 2N5202, 2N5203, 2N5208, 2N5209, 2N520A, 2N521
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