2N5212 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2N5212
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 7.5 W
   Tensión colector-base (Vcb): 80 V
   Tensión colector-emisor (Vce): 80 V
   Corriente del colector DC máxima (Ic): 0.6 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 200 MHz
   Capacitancia de salida (Cc): 12 pF
   Ganancia de corriente contínua (hfe): 10
   Paquete / Cubierta: TO37

Búsqueda de reemplazo de transistor bipolar 2N5212

2N5212 Datasheet (PDF)

9.1. Size:277K motorola
2n5209 2n5210.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N5209/DAmplifier TransistorsNPN Silicon2N52092N5210COLLECTOR32BASE1EMITTER123MAXIMUM RATINGSCASE 2904, STYLE 1Rating Symbol Value UnitTO92 (TO226AA)CollectorEmitter Voltage VCEO 50 VdcCollectorBase Voltage VCBO 50 VdcEmitterBase Voltage VEBO 4.0 VdcCollector Current C

9.2. Size:90K fairchild semi
2n5210 mmbt5210.pdf

2N5210/MMBT5210NPN General Purpose AmplifierCThis device is designed for low noise, high gain, general purposeamplifier applications at collector currents from 1A to 50 mA.ECTO-92BEB SOT-23Mark: 3MAbsolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 50 VVCBO Collector-Base Voltage 50 VVEBO Emitter-B

9.3. Size:21K samsung
2n5210.pdf

2N5210 NPN EPITAXIAL SILICON TRANSISTORAMPLIFIER TRANSISTORTO-92 Collector-Emitter Voltage: VCEO= 50V Collector Dissipation: PC (max)=625mWABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector-Base Voltage VCBO 50 VCollector-Emitter Voltage VCEO 50 VEmitter-Base Voltage VEBO 4.5 VCollector Current IC 50 mACollector Dissipation PC 625 mWJun

9.4. Size:69K central
2n5209 2n5210.pdf

DATA SHEET2N5209 2N5210 NPN SILICON TRANSISTOR TO-92 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5209 and 2N5210 are silicon NPN Transistors, manufactured by the epitaxial planar process, designed for applications requiring high gain and low noise. MAXIMUM RATINGS (TA=25C) SYMBOL UNITS Collector-Emitter Voltage VCEO 50 V Collector-Base Voltage VCBO 50 V Emitter-Base V

9.5. Size:1285K sprague
2n5172 2n5174 2n5209 2n5210 2n5219 2n5220 2n5221 2n5223 2n5225 2n5226 2n5228 2n5232 2n5232a 2n5249 2n5249a 2n5305.pdf