All Transistors. 2N5212 Datasheet

 

2N5212 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2N5212
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 7.5 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Collector Current |Ic max|: 0.6 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 200 MHz
   Collector Capacitance (Cc): 12 pF
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO37

 2N5212 Transistor Equivalent Substitute - Cross-Reference Search

   

2N5212 Datasheet (PDF)

 9.1. Size:277K  motorola
2n5209 2n5210.pdf

2N5212 2N5212

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N5209/DAmplifier TransistorsNPN Silicon2N52092N5210COLLECTOR32BASE1EMITTER123MAXIMUM RATINGSCASE 2904, STYLE 1Rating Symbol Value UnitTO92 (TO226AA)CollectorEmitter Voltage VCEO 50 VdcCollectorBase Voltage VCBO 50 VdcEmitterBase Voltage VEBO 4.0 VdcCollector Current C

 9.2. Size:90K  fairchild semi
2n5210 mmbt5210.pdf

2N5212 2N5212

2N5210/MMBT5210NPN General Purpose AmplifierCThis device is designed for low noise, high gain, general purposeamplifier applications at collector currents from 1A to 50 mA.ECTO-92BEB SOT-23Mark: 3MAbsolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 50 VVCBO Collector-Base Voltage 50 VVEBO Emitter-B

 9.3. Size:21K  samsung
2n5210.pdf

2N5212

2N5210 NPN EPITAXIAL SILICON TRANSISTORAMPLIFIER TRANSISTORTO-92 Collector-Emitter Voltage: VCEO= 50V Collector Dissipation: PC (max)=625mWABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector-Base Voltage VCBO 50 VCollector-Emitter Voltage VCEO 50 VEmitter-Base Voltage VEBO 4.5 VCollector Current IC 50 mACollector Dissipation PC 625 mWJun

 9.4. Size:69K  central
2n5209 2n5210.pdf

2N5212 2N5212

DATA SHEET2N5209 2N5210 NPN SILICON TRANSISTOR TO-92 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5209 and 2N5210 are silicon NPN Transistors, manufactured by the epitaxial planar process, designed for applications requiring high gain and low noise. MAXIMUM RATINGS (TA=25C) SYMBOL UNITS Collector-Emitter Voltage VCEO 50 V Collector-Base Voltage VCBO 50 V Emitter-Base V

Datasheet: 2N5202 , 2N5203 , 2N5208 , 2N5209 , 2N520A , 2N521 , 2N5210 , 2N5211 , 2SC2073 , 2N5213 , 2N5214 , 2N5215 , 2N5216 , 2N5217 , 2N5218 , 2N5219 , 2N521A .

 

 
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