TA1655B . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TA1655B
Material: Ge
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.12 W
Tensión colector-base (Vcb): 20 V
Tensión colector-emisor (Vce): 15 V
Tensión emisor-base (Veb): 12 V
Corriente del colector DC máxima (Ic): 0.4 A
Temperatura operativa máxima (Tj): 85 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 3 MHz
Ganancia de corriente contínua (hfe): 20
Paquete / Cubierta: TO5
Búsqueda de reemplazo de transistor bipolar TA1655B
TA1655B Datasheet (PDF)
kta1659 a.pdf
SEMICONDUCTOR KTA1659/ATECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH VOLTAGE APPLICATION.ACFEATURESDIM MILLIMETERSSHigh Transition Frequency : fT=100MHz(Typ.)._A 10.0 + 0.3_+B 15.0 0.3EComplementary to KTC4370/A.C _2.70 0.3+D 0.76+0.09/-0.05_E 3.2 0.2+_F 3.0 0.3+_12.0 0.3G +H 0.5+0.1/-0.05_+J 13.6 0.5L LMAXIMUM RATING (T
kta1659 kta1659a.pdf
SEMICONDUCTOR KTA1659/ATECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH VOLTAGE APPLICATION.ACFEATURESDIM MILLIMETERSSHigh Transition Frequency : fT=100MHz(Typ.)._A 10.0 + 0.3_+B 15.0 0.3EComplementary to KTC4370/A.C _2.70 0.3+D 0.76+0.09/-0.05_E 3.2 0.2+_F 3.0 0.3+_12.0 0.3G +H 0.5+0.1/-0.05_+J 13.6 0.5L LMAXIMUM RATING (T
kta1658.pdf
SEMICONDUCTOR KTA1658TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION. ACFEATURES DIM MILLIMETERSSGood Linearity of hFE._A 10.0 + 0.3_+B 15.0 0.3EComplementary to KTC4369.C _2.70 0.3+D 0.76+0.09/-0.05_E 3.2 0.2+_F 3.0 0.3+_12.0 0.3G +H 0.5+0.1/-0.05_+J 13.6 0.5L LMAXIMUM RATING (Ta=25 )RK _3.7 0
fta1659a.pdf
SEMICONDUCTORFTA1659A TECHNICAL DATAC AE DIM MILLIMETERS_A 10.16 0.20+FTA1659A TRANSISTOR (PNP) _B 15.00 0.20+_C 3.00 0.20+D 0.6250.125E 3.50 typF 2.7 typFEATURES _G 16.80 0.4+LM_+R H 0.45 0.1 High Transition Frequency _J 13.20 + 0.20_K 3.80 0.2+ High Voltage Applications DL 1.52 MAXM 1.52 MAXN N Complementary to FTC4
kta1659.pdf
DIP Type TransistorsPNP TransistorsKTA1659Unit: mmTO-220F0.200.200.202.540.200.70 Features High Transition Frequency Comlementary to KTC43700.202.761.47max0.200.500.200.801. Base2.54typ2. Collector2.54typ3. Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -160
kta1659a.pdf
DIP Type TransistorsPNP TransistorsKTA1659AUnit: mmTO-220F0.200.200.202.540.200.70 Features High Transition Frequency Comlementary to KTC4370A0.202.761.47max0.200.500.200.801. Base2.54typ2. Collector2.54typ3. Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -1
kta1659.pdf
isc Silicon PNP Power Transistor KTA1659DESCRIPTIONHigh Collector-Emitter Breakdown VoltageV = -160V(Min)CEOComplement to Type KTC4370Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -160 VCBO
kta1659a.pdf
isc Silicon PNP Power Transistor KTA1659ADESCRIPTIONHigh Collector-Emitter Breakdown VoltageV = -180V(Min)CEOComplement to Type KTC4370AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -180 VC
Otros transistores... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP31C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
