TA1658 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SEMICONDUCTOR KTA1658TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION. ACFEATURES DIM MILLIMETERSSGood Linearity of hFE._A 10.0 + 0.3_+B 15.0 0.3EComplementary to KTC4369.C _2.70 0.3+D 0.76+0.09/-0.05_E 3.2 0.2+_F 3.0 0.3+_12.0 0.3G +H 0.5+0.1/-0.05_+J 13.6 0.5L LMAXIMUM RATING (Ta=25 )RK _3.7 0

SEMICONDUCTOR KTA1659/ATECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH VOLTAGE APPLICATION.ACFEATURESDIM MILLIMETERSSHigh Transition Frequency : fT=100MHz(Typ.)._A 10.0 + 0.3_+B 15.0 0.3EComplementary to KTC4370/A.C _2.70 0.3+D 0.76+0.09/-0.05_E 3.2 0.2+_F 3.0 0.3+_12.0 0.3G +H 0.5+0.1/-0.05_+J 13.6 0.5L LMAXIMUM RATING (T

SEMICONDUCTOR KTA1659/ATECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH VOLTAGE APPLICATION.ACFEATURESDIM MILLIMETERSSHigh Transition Frequency : fT=100MHz(Typ.)._A 10.0 + 0.3_+B 15.0 0.3EComplementary to KTC4370/A.C _2.70 0.3+D 0.76+0.09/-0.05_E 3.2 0.2+_F 3.0 0.3+_12.0 0.3G +H 0.5+0.1/-0.05_+J 13.6 0.5L LMAXIMUM RATING (T

SEMICONDUCTORFTA1659A TECHNICAL DATAC AE DIM MILLIMETERS_A 10.16 0.20+FTA1659A TRANSISTOR (PNP) _B 15.00 0.20+_C 3.00 0.20+D 0.6250.125E 3.50 typF 2.7 typFEATURES _G 16.80 0.4+LM_+R H 0.45 0.1 High Transition Frequency _J 13.20 + 0.20_K 3.80 0.2+ High Voltage Applications DL 1.52 MAXM 1.52 MAXN N Complementary to FTC4

DIP Type TransistorsPNP TransistorsKTA1659Unit: mmTO-220F0.200.200.202.540.200.70 Features High Transition Frequency Comlementary to KTC43700.202.761.47max0.200.500.200.801. Base2.54typ2. Collector2.54typ3. Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -160

DIP Type TransistorsPNP TransistorsKTA1659AUnit: mmTO-220F0.200.200.202.540.200.70 Features High Transition Frequency Comlementary to KTC4370A0.202.761.47max0.200.500.200.801. Base2.54typ2. Collector2.54typ3. Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -1

isc Silicon PNP Power Transistor KTA1659DESCRIPTIONHigh Collector-Emitter Breakdown VoltageV = -160V(Min)CEOComplement to Type KTC4370Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -160 VCBO

isc Silicon PNP Power Transistor KTA1659ADESCRIPTIONHigh Collector-Emitter Breakdown VoltageV = -180V(Min)CEOComplement to Type KTC4370AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -180 VC