TA1659 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SEMICONDUCTOR KTA1659/A TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH VOLTAGE APPLICATION. A C FEATURES DIM MILLIMETERS S High Transition Frequency fT=100MHz(Typ.). _ A 10.0 + 0.3 _ + B 15.0 0.3 E Complementary to KTC4370/A. C _ 2.70 0.3 + D 0.76+0.09/-0.05 _ E 3.2 0.2 + _ F 3.0 0.3 + _ 12.0 0.3 G + H 0.5+0.1/-0.05 _ + J 13.6 0.5 L L MAXIMUM RATING (T

SEMICONDUCTOR KTA1659/A TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH VOLTAGE APPLICATION. A C FEATURES DIM MILLIMETERS S High Transition Frequency fT=100MHz(Typ.). _ A 10.0 + 0.3 _ + B 15.0 0.3 E Complementary to KTC4370/A. C _ 2.70 0.3 + D 0.76+0.09/-0.05 _ E 3.2 0.2 + _ F 3.0 0.3 + _ 12.0 0.3 G + H 0.5+0.1/-0.05 _ + J 13.6 0.5 L L MAXIMUM RATING (T

SEMICONDUCTOR FTA1659A TECHNICAL DATA C A E DIM MILLIMETERS _ A 10.16 0.20 + FTA1659A TRANSISTOR (PNP) _ B 15.00 0.20 + _ C 3.00 0.20 + D 0.625 0.125 E 3.50 typ F 2.7 typ FEATURES _ G 16.80 0.4 + L M _ + R H 0.45 0.1 High Transition Frequency _ J 13.20 + 0.20 _ K 3.80 0.2 + High Voltage Applications D L 1.52 MAX M 1.52 MAX N N Complementary to FTC4

DIP Type Transistors PNP Transistors KTA1659 Unit mm TO-220F 0.20 0.20 0.20 2.54 0.20 0.70 Features High Transition Frequency Comlementary to KTC4370 0.20 2.76 1.47max 0.20 0.50 0.20 0.80 1. Base 2.54typ 2. Collector 2.54typ 3. Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -160

DIP Type Transistors PNP Transistors KTA1659A Unit mm TO-220F 0.20 0.20 0.20 2.54 0.20 0.70 Features High Transition Frequency Comlementary to KTC4370A 0.20 2.76 1.47max 0.20 0.50 0.20 0.80 1. Base 2.54typ 2. Collector 2.54typ 3. Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -1

isc Silicon PNP Power Transistor KTA1659 DESCRIPTION High Collector-Emitter Breakdown Voltage V = -160V(Min) CEO Complement to Type KTC4370 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -160 V CBO

isc Silicon PNP Power Transistor KTA1659A DESCRIPTION High Collector-Emitter Breakdown Voltage V = -180V(Min) CEO Complement to Type KTC4370A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -180 V C