TA1659 Datasheet. Equivalente

 0.1. Size:456K  kec
 kta1659 a.pdf

SEMICONDUCTOR KTA1659/A TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH VOLTAGE APPLICATION. A C FEATURES DIM MILLIMETERS S High Transition Frequency fT=100MHz(Typ.). _ A 10.0 + 0.3 _ + B 15.0 0.3 E Complementary to KTC4370/A. C _ 2.70 0.3 + D 0.76+0.09/-0.05 _ E 3.2 0.2 + _ F 3.0 0.3 + _ 12.0 0.3 G + H 0.5+0.1/-0.05 _ + J 13.6 0.5 L L MAXIMUM RATING (T

 0.2. Size:456K  kec
 kta1659 kta1659a.pdf

SEMICONDUCTOR KTA1659/A TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH VOLTAGE APPLICATION. A C FEATURES DIM MILLIMETERS S High Transition Frequency fT=100MHz(Typ.). _ A 10.0 + 0.3 _ + B 15.0 0.3 E Complementary to KTC4370/A. C _ 2.70 0.3 + D 0.76+0.09/-0.05 _ E 3.2 0.2 + _ F 3.0 0.3 + _ 12.0 0.3 G + H 0.5+0.1/-0.05 _ + J 13.6 0.5 L L MAXIMUM RATING (T

 0.3. Size:160K  first silicon
 fta1659a.pdf

SEMICONDUCTOR FTA1659A TECHNICAL DATA C A E DIM MILLIMETERS _ A 10.16 0.20 + FTA1659A TRANSISTOR (PNP) _ B 15.00 0.20 + _ C 3.00 0.20 + D 0.625 0.125 E 3.50 typ F 2.7 typ FEATURES _ G 16.80 0.4 + L M _ + R H 0.45 0.1 High Transition Frequency _ J 13.20 + 0.20 _ K 3.80 0.2 + High Voltage Applications D L 1.52 MAX M 1.52 MAX N N Complementary to FTC4

 0.4. Size:402K  kexin
 kta1659.pdf

DIP Type Transistors PNP Transistors KTA1659 Unit mm TO-220F 0.20 0.20 0.20 2.54 0.20 0.70 Features High Transition Frequency Comlementary to KTC4370 0.20 2.76 1.47max 0.20 0.50 0.20 0.80 1. Base 2.54typ 2. Collector 2.54typ 3. Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -160

 0.5. Size:405K  kexin
 kta1659a.pdf

DIP Type Transistors PNP Transistors KTA1659A Unit mm TO-220F 0.20 0.20 0.20 2.54 0.20 0.70 Features High Transition Frequency Comlementary to KTC4370A 0.20 2.76 1.47max 0.20 0.50 0.20 0.80 1. Base 2.54typ 2. Collector 2.54typ 3. Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -1

 0.6. Size:213K  inchange semiconductor
 kta1659.pdf

isc Silicon PNP Power Transistor KTA1659 DESCRIPTION High Collector-Emitter Breakdown Voltage V = -160V(Min) CEO Complement to Type KTC4370 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -160 V CBO

 0.7. Size:213K  inchange semiconductor
 kta1659a.pdf

isc Silicon PNP Power Transistor KTA1659A DESCRIPTION High Collector-Emitter Breakdown Voltage V = -180V(Min) CEO Complement to Type KTC4370A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -180 V C