TA1703B . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SEMICONDUCTOR KTA1703 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH VOLTAGE APPLICATION. A B DC-DC CONVERTER. D C LOW POWER SWITCHING REGULATOR. E F FEATURES High Breakdown Voltage. G VCEO=-400V H Low Collector Saturation Voltage DIM MILLIMETERS J A 8.3 MAX VCE(sat)=-1V(max.), (IC=-100mA, IB=-10mA) K B 5.8 L High Speed Switching. C 0.7 _ + D 3.2 0.1 E

APTGT50TA170P Triple phase leg VCES = 1700V Trench IGBT Power Module IC = 50A @ Tc = 80 C Application VBUS1 VBUS2 VBUS3 Welding converters Switched Mode Power Supplies G1 G3 G5 Uninterruptible Power Supplies Motor control E1 E3 E5 U V W Features Trench + Field Stop IGBT Technology G2 G4 G6 - Low voltage drop - Low tail current - Switchi

SEMICONDUCTOR KTA1709 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR STROBO FLASH APPLICATION. A B HIGH CURRENT APPLICATION. D C E FEATURES F hFE=100 320 (VCE=-2V, IC=-0.5A). Low Collector Saturation Voltage. G VCE(sat)=-0.5V (IC=-3A, IB=-75mA). H DIM MILLIMETERS J A 8.3 MAX K B 5.8 L C 0.7 _ + D 3.2 0.1 MAXIMUM RATING (Ta=25 ) E 3.5 _ + F 11.0 0.3 CHARACTER

SEMICONDUCTOR KTA1705 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR AUDIO AMPLIFIER, VOLTAGE REGULATOR A B DC-DC CONVERTER, RELAY DRIVER D C E FEATURES F Low Saturation Voltage. VCE(sat) -0.8V (IC=-2A, IB=-0.2A) G Excellent hFE Linearity and high hFE. H hFE 70 240 (VCE=-2V, IC=-0.5A) DIM MILLIMETERS J A 8.3 MAX Complementary to KTC2804. K B 5.8 L C 0.7 _ + D

SEMICONDUCTOR KTA1704 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER A B HIGH FREQUENCY POWER AMPLIFIER D C E FEATURES F Complementary to KTC2803. G H DIM MILLIMETERS J A 8.3 MAX MAXIMUM RATING (Ta=25 ) K B 5.8 L C 0.7 CHARACTERISTIC SYMBOL RATING UNIT _ + D 3.2 0.1 E 3.5 VCBO -120 V Collector-Base Voltage _ + F 11.0 0.3 G 2.9 M

SEMICONDUCTOR KTA1700 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH VOLTAGE APPLICATION. A B D C FEATURES E High Transition Frequency fT=100MHz(Typ.). F Complementary to KTC2800. G H DIM MILLIMETERS J A 8.3 MAX MAXIMUM RATING (Ta=25 ) K B 5.8 L C 0.7 CHARACTERISTIC SYMBOL RATING UNIT _ + D 3.2 0.1 E 3.5 VCBO -160 V Collector-Base Voltage _ + F 11.0 0.3

isc Silicon PNP Power Transistor KTA1700 DESCRIPTION High Collector-Emitter Breakdown Voltage V = -160V(Min) CEO Complement to Type KTC2800 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -160 V CBO