TA1703B
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TA1703B
Material: Ge
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.12
W
Tensión colector-base (Vcb): 20
V
Corriente del colector DC máxima (Ic): 0.4
A
Temperatura operativa máxima (Tj): 80
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 3
MHz
Capacitancia de salida (Cc): 25
pF
Ganancia de corriente contínua (hfe): 15
Paquete / Cubierta:
TO5
Búsqueda de reemplazo de transistor bipolar TA1703B
TA1703B
Datasheet (PDF)
8.1. Size:391K kec
kta1703.pdf 
SEMICONDUCTOR KTA1703TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH VOLTAGE APPLICATION.ABDC-DC CONVERTER.DCLOW POWER SWITCHING REGULATOR.EFFEATURES High Breakdown Voltage. G: VCEO=-400VHLow Collector Saturation Voltage DIM MILLIMETERSJA 8.3 MAX: VCE(sat)=-1V(max.), (IC=-100mA, IB=-10mA)KB 5.8LHigh Speed Switching. C 0.7_+D 3.2 0.1E
9.1. Size:284K apt
aptgt50ta170p.pdf
APTGT50TA170P Triple phase leg VCES = 1700V Trench IGBT Power Module IC = 50A @ Tc = 80C Application VBUS1 VBUS2 VBUS3 Welding converters Switched Mode Power Supplies G1 G3 G5 Uninterruptible Power Supplies Motor control E1 E3 E5 U V WFeatures Trench + Field Stop IGBT Technology G2 G4 G6 - Low voltage drop - Low tail current - Switchi
9.2. Size:392K kec
kta1709.pdf
SEMICONDUCTOR KTA1709TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORSTROBO FLASH APPLICATION.ABHIGH CURRENT APPLICATION.DCEFEATURESFhFE=100 320 (VCE=-2V, IC=-0.5A).Low Collector Saturation Voltage. G: VCE(sat)=-0.5V (IC=-3A, IB=-75mA). HDIM MILLIMETERSJA 8.3 MAXKB 5.8LC 0.7_+D 3.2 0.1MAXIMUM RATING (Ta=25 )E 3.5_+F 11.0 0.3CHARACTER
9.3. Size:392K kec
kta1705.pdf
SEMICONDUCTOR KTA1705TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORAUDIO AMPLIFIER, VOLTAGE REGULATOR ABDC-DC CONVERTER, RELAY DRIVERDCEFEATURESFLow Saturation Voltage.: VCE(sat) -0.8V (IC=-2A, IB=-0.2A)GExcellent hFE Linearity and high hFE. H: hFE:70 240 (VCE=-2V, IC=-0.5A)DIM MILLIMETERSJA 8.3 MAXComplementary to KTC2804.KB 5.8LC 0.7_+D
9.4. Size:396K kec
kta1704.pdf
SEMICONDUCTOR KTA1704TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORAUDIO FREQUENCY POWER AMPLIFIERABHIGH FREQUENCY POWER AMPLIFIER DCEFEATURESFComplementary to KTC2803.GHDIM MILLIMETERSJA 8.3 MAXMAXIMUM RATING (Ta=25 )KB 5.8LC 0.7CHARACTERISTIC SYMBOL RATING UNIT_+D 3.2 0.1E 3.5VCBO -120 VCollector-Base Voltage_+F 11.0 0.3G 2.9 M
9.5. Size:82K kec
kta1700.pdf
SEMICONDUCTOR KTA1700TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH VOLTAGE APPLICATION. ABDCFEATURESEHigh Transition Frequency : fT=100MHz(Typ.).FComplementary to KTC2800. GHDIM MILLIMETERSJA 8.3 MAXMAXIMUM RATING (Ta=25 )KB 5.8LC 0.7CHARACTERISTIC SYMBOL RATING UNIT_+D 3.2 0.1E 3.5VCBO -160 VCollector-Base Voltage_+F 11.0 0.3
9.6. Size:214K inchange semiconductor
kta1700.pdf
isc Silicon PNP Power Transistor KTA1700DESCRIPTIONHigh Collector-Emitter Breakdown VoltageV = -160V(Min)CEOComplement to Type KTC2800Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -160 VCBO
Otros transistores... 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
, 2N3207
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, 2N3209
, 2N3209AQF
, 2N3209CSM
, 2N3209DCSM
, 2N3209L
, 2N321
, 2N3210
, 2N3211
.
