TA1947 Todos los transistores

 

TA1947 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TA1947
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.33 W
   Tensión colector-base (Vcb): 80 V
   Tensión colector-emisor (Vce): 60 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 140 °C

CARACTERÍSTICAS ELÉCTRICAS


   Capacitancia de salida (Cc): 4 pF
   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: TO98-2

 Búsqueda de reemplazo de transistor bipolar TA1947

 

TA1947 Datasheet (PDF)

 9.1. Size:188K  st
2sta1943.pdf

TA1947
TA1947

2STA1943High power PNP epitaxial planar bipolar transistorFeatures High breakdown voltage VCEO > -230V Complementary to 2STC5200 Fast-switching speed Typical fT = 30 MHzApplication321 Audio power amplifierTO-264DescriptionThis device is a NPN transistor manufactured using new BiT-LA (Bipolar Transistor for linear amplifier) technology. The resultin

 9.2. Size:191K  toshiba
tta1943.pdf

TA1947
TA1947

TTA1943 TOSHIBA Transistor Silicon PNP Epitaxial Type TTA1943 Power Amplifier Applications Unit: mm High collector voltage: VCEO = -230 V (min) Complementary to TTC5200 Recommended for 100-W high-fidelity audio frequency amplifier output stage. Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO -230 VCollector-

 9.3. Size:77K  kec
kta1940.pdf

TA1947
TA1947

SEMICONDUCTOR KTA1940TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTORHIGH POWER AMPLIFIER APPLICATION. A Q BKFEATURES Recommended for 55W Audio Frequency Amplifier Output Stage.DIM MILLIMETERS Complementary to KTC5197.A 15.9 MAXB 4.8 MAX_C 20.0 + 0.3_D 2.0 + 0.3Dd 1.0+0.3/-0.25E 2.0F 1.0MAXIMUM RATING (Ta=25 )G 3.3 MAXdH 9.0CHARACTERISTIC SYMBOL RAT

 9.4. Size:372K  first silicon
fta1943.pdf

TA1947
TA1947

SEMICONDUCTORFTA1943TECHNICAL DATAPurpose: Power amplifier applications. Features: Recommend for 100W high fidelity audio frequencyamplifier output stage,Complementary to FTC5200. Absolute maximum ratings(Ta=25) Rating Symbol Unit V -230 V CBO V -230 V CEO V -5 V EBO I -15 A C I -30 A CPI -1.5 A BP 150 W C(TC=25)T 150 j T -55150

 9.5. Size:1600K  cn evvo
tta1943.pdf

TA1947
TA1947

TTA1943Silicon PNP transistorPower Amplifier Applications Complementary to TTC5200 High collector voltage:VCEO=-230V (min) Recommended for 100-W high-fidelity audio frequency amplifierOutput stageNote: Using continuously under heavy loads (e.g. the applicationof high temperature/current/voltage and the significant changein temperature, etc.) may cause this product to

 9.6. Size:187K  inchange semiconductor
tta1943.pdf

TA1947
TA1947

INCHANGE Semiconductorisc Silicon PNP Power Transistor TTA1943DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = -230V(Min)(BR)CEOComplement to Type TTC5200Minimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSPower amplifier applicationsRecommended for 100W high fidelity audio frequency amplifieroutput stageABSO

Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , BC557 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

History: 2N1504-10 | 2N2693 | LBC549 | 2N5077

 

 
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