TD162 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TD162

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 90 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 60 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 8 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 750

Encapsulados: TO3

 Búsqueda de reemplazo de TD162

- Selecciónⓘ de transistores por parámetros

 

TD162 datasheet

 0.1. Size:50K  kec
 ktd1624.pdf pdf_icon

TD162

SEMICONDUCTOR KTD1624 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VOLTAGE REGULATORS, RELAY DRIVERS LAMP DRIVERS, ELECTRICAL EQUIPMENT A C FEATURES H Adoption of MBIT processes. G Low collector-to-emitter saturation voltage. Fast switching speed. DIM MILLIMETERS Large current capacity and wide ASO. A 4.70 MAX D _ + D B 2.50 0.20 Complementary to KTB1124. K C 1.7

 0.2. Size:1380K  blue-rocket-elect
 ktd1624.pdf pdf_icon

TD162

KTD1624 Rev.G Jan.-2019 DATA SHEET / Descriptions SOT-89 NPN Silicon NPN transistor in a SOT-89 Plastic Package. / Features MBIT - , KTB1124 Adoption of MBIT processes, low collector-t

 0.3. Size:1562K  first silicon
 ftd1624.pdf pdf_icon

TD162

SEMICONDUCTOR FTD1624 TECHNICAL DATA VOLTAGE REGULATORS, RELAY DRIVERS LAMP DRIVERS, ELECTRICAL EQUIPMENT A C H G FEATURES Adoption of MBIT processes. Low collector-to-emitter saturation voltage. Fast switching speed. D D K Large current capacity and wide ASO. F F DIM MILLIMETERS Complementary to FTB1124. A 4.70 MAX _ + B 2.50 0.20 C 1.70 MAX MAXIMUM RATING (Ta=25 ) 1

Otros transistores... TD13004, TD13004D, TD13004DSMD, TD13004SMD, TD13005, TD13005D, TD13005DSMD, TD13005SMD, 2SC828, TD162-1, TD162A, TD162B, TD162C, TD163, TD163-1, TD163A, TD163B