TD162 Specs and Replacement
Type Designator: TD162
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 90 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 750
Package: TO3
TD162 Substitution
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TD162 datasheet
SEMICONDUCTOR KTD1624 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VOLTAGE REGULATORS, RELAY DRIVERS LAMP DRIVERS, ELECTRICAL EQUIPMENT A C FEATURES H Adoption of MBIT processes. G Low collector-to-emitter saturation voltage. Fast switching speed. DIM MILLIMETERS Large current capacity and wide ASO. A 4.70 MAX D _ + D B 2.50 0.20 Complementary to KTB1124. K C 1.7... See More ⇒
KTD1624 Rev.G Jan.-2019 DATA SHEET / Descriptions SOT-89 NPN Silicon NPN transistor in a SOT-89 Plastic Package. / Features MBIT - , KTB1124 Adoption of MBIT processes, low collector-t... See More ⇒
SEMICONDUCTOR FTD1624 TECHNICAL DATA VOLTAGE REGULATORS, RELAY DRIVERS LAMP DRIVERS, ELECTRICAL EQUIPMENT A C H G FEATURES Adoption of MBIT processes. Low collector-to-emitter saturation voltage. Fast switching speed. D D K Large current capacity and wide ASO. F F DIM MILLIMETERS Complementary to FTB1124. A 4.70 MAX _ + B 2.50 0.20 C 1.70 MAX MAXIMUM RATING (Ta=25 ) 1 ... See More ⇒
Detailed specifications: TD13004, TD13004D, TD13004DSMD, TD13004SMD, TD13005, TD13005D, TD13005DSMD, TD13005SMD, 2SC828, TD162-1, TD162A, TD162B, TD162C, TD163, TD163-1, TD163A, TD163B
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