All Transistors. TD162 Datasheet

 

TD162 Datasheet and Replacement


   Type Designator: TD162
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 90 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 8 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Forward Current Transfer Ratio (hFE), MIN: 750
   Noise Figure, dB: -
   Package: TO3
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TD162 Datasheet (PDF)

 0.1. Size:50K  kec
 ktd1624.pdf pdf_icon

TD162

SEMICONDUCTOR KTD1624TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORVOLTAGE REGULATORS, RELAY DRIVERS LAMP DRIVERS, ELECTRICAL EQUIPMENTACFEATURESHAdoption of MBIT processes.GLow collector-to-emitter saturation voltage.Fast switching speed.DIM MILLIMETERSLarge current capacity and wide ASO.A 4.70 MAXD _+D B 2.50 0.20Complementary to KTB1124.K C 1.7

 0.2. Size:1380K  blue-rocket-elect
 ktd1624.pdf pdf_icon

TD162

KTD1624 Rev.G Jan.-2019 DATA SHEET / Descriptions SOT-89 NPN Silicon NPN transistor in a SOT-89 Plastic Package. / Features MBIT -, KTB1124Adoption of MBIT processes, low collector-t

 0.3. Size:1562K  first silicon
 ftd1624.pdf pdf_icon

TD162

SEMICONDUCTORFTD1624TECHNICAL DATAVOLTAGE REGULATORS, RELAY DRIVERS LAMP DRIVERS, ELECTRICAL EQUIPMENTACHGFEATURESAdoption of MBIT processes.Low collector-to-emitter saturation voltage.Fast switching speed. DDKLarge current capacity and wide ASO.F FDIM MILLIMETERSComplementary to FTB1124.A 4.70 MAX_+B 2.50 0.20C 1.70 MAXMAXIMUM RATING (Ta=25 )1

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: 3CG562TM | 2SB1188SQ-R | SS8550W-L | 3DF5 | BUX50C | DTA144WET1G | 40547

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