2N5239 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N5239
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 100 W
Tensión colector-base (Vcb): 300 V
Tensión colector-emisor (Vce): 225 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 5 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 5 MHz
Capacitancia de salida (Cc): 150 pF
Ganancia de corriente contínua (hfe): 20
Paquete / Cubierta: TO3
Búsqueda de reemplazo de 2N5239
2N5239 Datasheet (PDF)
2n5239.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5239 DESCRIPTION With TO-3 package High breakdown voltage High power dissipation APPLICATIONS Switching regulator Inverters Power amplifiers Deflection circuits High-voltage bridge amplifiers PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-
2n5232a.pdf

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824
2n5237s.pdf

SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N5237S Low Power, High Voltage. Hermetic TO-39 Metal Package. Ideally Suited For Switching And General Purpose Applications. Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VCBO Collector Base Voltage 150V VCEO Collector Emitter Voltage 120V VEBO Emitter Base
2n5232 a.pdf

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N52322N5232ATO-92Plastic PackageABSOLUTE MAXIMUM RATINGS(Ta=25C unless specified otherwise)DESCRIPTION SYMBOL VALUE UNITSVCEOCollector Emitter Voltage 50 VVCBOCollector Base Voltage 70 VVEBOEmitter Base Voltage 5VICCollector Current 1
Otros transistores... 2N5232 , 2N5232A , 2N5233 , 2N5234 , 2N5235 , 2N5236 , 2N5237 , 2N5238 , 2SC945 , 2N523A , 2N524 , 2N5240 , 2N5241 , 2N5242 , 2N5243 , 2N5244 , 2N5249 .



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