2N5239 Specs and Replacement
Type Designator: 2N5239
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 300 V
Maximum Collector-Emitter Voltage |Vce|: 225 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 5 MHz
Collector Capacitance (Cc): 150 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO3
2N5239 Substitution
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2N5239 datasheet
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5239 DESCRIPTION With TO-3 package High breakdown voltage High power dissipation APPLICATIONS Switching regulator Inverters Power amplifiers Deflection circuits High-voltage bridge amplifiers PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-... See More ⇒
145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824 ... See More ⇒
SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N5237S Low Power, High Voltage. Hermetic TO-39 Metal Package. Ideally Suited For Switching And General Purpose Applications. Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise stated) VCBO Collector Base Voltage 150V VCEO Collector Emitter Voltage 120V VEBO Emitter Base ... See More ⇒
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N5232 2N5232A TO-92 Plastic Package ABSOLUTE MAXIMUM RATINGS(Ta=25 C unless specified otherwise) DESCRIPTION SYMBOL VALUE UNITS VCEO Collector Emitter Voltage 50 V VCBO Collector Base Voltage 70 V VEBO Emitter Base Voltage 5V IC Collector Current 1... See More ⇒
Detailed specifications: 2N5232, 2N5232A, 2N5233, 2N5234, 2N5235, 2N5236, 2N5237, 2N5238, 2SC945, 2N523A, 2N524, 2N5240, 2N5241, 2N5242, 2N5243, 2N5244, 2N5249
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