2N5241 Todos los transistores

 

2N5241 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N5241

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 125 W

Tensión colector-base (Vcb): 400 V

Tensión colector-emisor (Vce): 325 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 2.5 MHz

Ganancia de corriente contínua (hFE): 15

Encapsulados: TO3

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2N5241 datasheet

 ..1. Size:39K  jmnic
2n5241.pdf pdf_icon

2N5241

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5241 DESCRIPTION With TO-3 package High breakdown voltage APPLICATIONS Switching regulator Inverters Solenoid and relay drivers Motor controls PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol MAXIMUN RATINGS(Ta=25 ) SYMBOL PA

 ..2. Size:116K  inchange semiconductor
2n5241.pdf pdf_icon

2N5241

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5241 DESCRIPTION With TO-3 package High breakdown voltage APPLICATIONS Switching regulator Inverters Solenoid and relay drivers Motor controls PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector MAXIMUN RATINGS(Ta=25 )

 9.1. Size:26K  fairchild semi
2n5246.pdf pdf_icon

2N5241

2N5246 N-Channel RF Amplifier This device is designed for HF/VHF mixer/amplifier and applications where process 50is not adequate. Sufficient gain and low noise for sensitive receivers. Sourced from process 90. TO-92 1 1. Gate 2. Source 3. Drain Absolute Maximum Ratings* Ta=25 C unless otherwise noted Symbol Parameter Ratings Units VDG Drain-Gate Voltage 30 V VGS Gate-So

 9.2. Size:26K  fairchild semi
2n5245.pdf pdf_icon

2N5241

2N5245 N-Channel RF Amplifier This device is designed for HF/VHF mixer/amplifier and applications where process 50is not adequate. Sufficient gain and low noise for sensitive receivers. Sourced from process 90. TO-92 1 1. Gate 2. Source 3. Drain Absolute Maximum Ratings* Ta=25 C unless otherwise noted Symbol Parameter Ratings Units VDG Drain-Gate Voltage 30 V VGS Gate-So

Otros transistores... 2N5235 , 2N5236 , 2N5237 , 2N5238 , 2N5239 , 2N523A , 2N524 , 2N5240 , 2SC2655 , 2N5242 , 2N5243 , 2N5244 , 2N5249 , 2N5249A , 2N524A , 2N525 , 2N5250 .

 

 

 

 

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