2N5241 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N5241
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 125 W
Maximum Collector-Base Voltage |Vcb|: 400 V
Maximum Collector-Emitter Voltage |Vce|: 325 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 2.5 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: TO3
2N5241 Transistor Equivalent Substitute - Cross-Reference Search
2N5241 Datasheet (PDF)
2n5241.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5241 DESCRIPTION With TO-3 package High breakdown voltage APPLICATIONS Switching regulator Inverters Solenoid and relay drivers Motor controls PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-3) and symbol MAXIMUN RATINGS(Ta=25) SYMBOL PA
2n5241.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5241 DESCRIPTION With TO-3 package High breakdown voltage APPLICATIONS Switching regulator Inverters Solenoid and relay drivers Motor controls PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorMAXIMUN RATINGS(Ta=25)
2n5246.pdf
2N5246N-Channel RF Amplifier This device is designed for HF/VHF mixer/amplifier and applications where process 50is not adequate. Sufficient gain and low noise for sensitive receivers. Sourced from process 90.TO-9211. Gate 2. Source 3. DrainAbsolute Maximum Ratings* Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVDG Drain-Gate Voltage 30 VVGS Gate-So
2n5245.pdf
2N5245N-Channel RF Amplifier This device is designed for HF/VHF mixer/amplifier and applications where process 50is not adequate. Sufficient gain and low noise for sensitive receivers. Sourced from process 90.TO-9211. Gate 2. Source 3. DrainAbsolute Maximum Ratings* Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVDG Drain-Gate Voltage 30 VVGS Gate-So
2n5240.pdf
NPN Power Silicon Transistor2N5240Features High Voltage: Vceo(sus) = 300 V (min) Wide Area of Safe Operation Designed for use in series regulators, power amplifiers, inverters, deflection circuits, switchingregulators, and high-voltage bridge amplifiers. TO-3 (TO-204AA) PackageMaximum Ratings (TA = 25 C) Ratings Symbol Value UnitsCollector - Base Voltage VCBO
2n5172 2n5174 2n5209 2n5210 2n5219 2n5220 2n5221 2n5223 2n5225 2n5226 2n5228 2n5232 2n5232a 2n5249 2n5249a 2n5305.pdf
2n5240.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N5240 DESCRIPTION High Voltage- : VCEO(SUS)= 300V(Min) Wide Area of Safe Operation APPLICATIONS Designed for use in series regulators, power amplifiers, inverters, deflection circuits, switching regulators, and high-voltage bridge amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL
Datasheet: 2N5235 , 2N5236 , 2N5237 , 2N5238 , 2N5239 , 2N523A , 2N524 , 2N5240 , 13005 , 2N5242 , 2N5243 , 2N5244 , 2N5249 , 2N5249A , 2N524A , 2N525 , 2N5250 .
History: 2N5264
