TIP100
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TIP100
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 80
W
Tensión colector-base (Vcb): 60
V
Tensión colector-emisor (Vce): 60
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 8
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 4
MHz
Ganancia de corriente contínua (hfe): 1000
Paquete / Cubierta:
TO220
Búsqueda de reemplazo de transistor bipolar TIP100
TIP100
Datasheet (PDF)
..1. Size:44K st
tip100 tip102 tip105 tip106 tip107.pdf 
TIP100/TIP102TIP105/TIP106/TIP107COMPLEMENTARY SILICON POWERDARLINGTON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES INTEGRATED ANTIPARALLELCOLLECTOR-EMITTER DIODEAPPLICATIONS LINEAR AND SWITCHING INDUSTRIALEQUIPMENT32DESCRIPTION1The TIP100 and TIP102 are silicon epitaxial-baseNPN power transistors in monolithic DarlingtonTO-220
..2. Size:59K samsung
tip100.pdf
NPN EPITAXIALTIP100/101/102 SILICON DARLINGTON TRANSISTORHIGH DC CURRENT GAINTO-220MIN h =1000 @ V =4V, I =3AFE CE CCOLLECTOR-EMITTER SUSTAINING VOLTAGELOW COLLECTOR-EMITTERSATURATION VOLTAGEMONOLITHIC CONSTRUCTION WITH BUILTIN BASE-EMITTER SHUNT RESISTORSINDUSTRIAL USEComplementary to TIP105/106/107ABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collecto
..3. Size:243K mcc
tip100 tip101 tip102 to-220.pdf
MCCTIP100TM Micro Commercial Components20736 Marilla Street ChatsworthMicro Commercial ComponentsTIP101CA 91311Phone: (818) 701-4933TIP102Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates RoHS Compliant. See ordering information) High DC Current Gain : hFE=2500 (Typ) @ IC=4.0AdcNPN Plastic Low Collector-Emitter S
..4. Size:212K inchange semiconductor
tip100.pdf
isc Silicon NPN Darlington Power Transistor TIP100DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 3AFE CCollector-Emitter Sustaining Voltage-: V = 60V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = 2.0V(Max)@ I = 3ACE(sat) C= 2.5V(Max)@ I = 8ACComplement to Type TIP105Minimum Lot-to-Lot variations for robust deviceperformance and reliable
0.1. Size:218K motorola
tip100re.pdf
Order this documentMOTOROLAby TIP100/DSEMICONDUCTOR TECHNICAL DATAPlastic Medium-PowerNPNTIP100Complementary Silicon Transistors. . . designed for generalpurpose amplifier and lowspeed switching applications.TIP101* High DC Current Gain hFE = 2500 (Typ) @ IC = 4.0 Adc CollectorEmitter Sustaining Voltage @ 30 mAdcTIP102*VCEO(sus) = 60 Vdc (Min)
0.2. Size:314K cdil
tip100-107.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPLASTIC POWER TRANSISTORS TIP100 TIP105TIP101 TIP106TIP102 TIP107NPN PNPTO-220Plastic PackageIntended for use in Linear Switching ApplicationsABSOLUTE MAXIMUM RATINGS (Ta=25C)DESCRIPTION TIP100/105 TIP101/106 TIP102/107 UNITVCEO Collector Emitter Voltage 60 80 100 VCollector Base
9.1. Size:51K fairchild semi
tip102.pdf
TIP100/101/102Monolithic Construction With Built In Base-Emitter Shunt Resistors High DC Current Gain : hFE=1000 @ VCE=4V, IC=3A (Min.) Collector-Emitter Sustaining Voltage Low Collector-Emitter Saturation Voltage Industrial UseTO-2201 Complementary to TIP105/106/1071.Base 2.Collector 3.EmitterNPN Epitaxial Silicon Darlington TransistorAbsolute Maximum
9.2. Size:50K fairchild semi
tip106.pdf
TIP105/106/107Monolithic Construction With Built In Base-Emitter Shunt Resistors High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -3A (Min.) Collector-Emitter Sustaining Voltage Low Collector-Emitter Saturation Voltage Industrial Use TO-2201 Complementary to TIP100/101/1021.Base 2.Collector 3.EmitterPNP Epitaxial Silicon Darlington TransistorAbsolute Maximu
9.3. Size:213K inchange semiconductor
tip102.pdf
isc Silicon NPN Darlington Power Transistor TIP102DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 3AFE CCollector-Emitter Sustaining Voltage-: V = 100V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = 2.0V(Max)@ I = 3ACE(sat) C= 2.5V(Max)@ I = 8ACComplement to Type TIP107Minimum Lot-to-Lot variations for robust deviceperformance and reliabl
9.4. Size:212K inchange semiconductor
tip106.pdf
isc Silicon PNP Darlington Power Transistor TIP106DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = -3AFE CCollector-Emitter Sustaining Voltage-: V = -80V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = -2.0V(Max)@ I = -3ACE(sat) C= -2.5V(Max)@ I = -8ACComplement to Type TIP101Minimum Lot-to-Lot variations for robust deviceperformance and re
9.5. Size:136K inchange semiconductor
tip101.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor TIP101 DESCRIPTION High DC Current Gain- : hFE = 1000(Min)@ IC= 3A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 80V(Min) Low Collector-Emitter Saturation Voltage- : VCE(sat) = 2.0V(Max)@ IC= 3A = 2.5V(Max)@ IC= 8A Complement to Type TIP106 APPLICATIONS Designed
9.6. Size:212K inchange semiconductor
tip107.pdf
isc Silicon PNP Darlington Power Transistor TIP107DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = -3AFE CCollector-Emitter Sustaining Voltage-: V = -100V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = -2.0V(Max)@ I = -3ACE(sat) C= -2.5V(Max)@ I = -8ACComplement to Type TIP102Minimum Lot-to-Lot variations for robust deviceperformance and r
9.7. Size:212K inchange semiconductor
tip105.pdf
isc Silicon PNP Darlington Power Transistor TIP105DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = -3AFE CCollector-Emitter Sustaining Voltage-: V = -60V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = -2.0V(Max)@ I = -3ACE(sat) C= -2.5V(Max)@ I = -8ACComplement to Type TIP100Minimum Lot-to-Lot variations for robust deviceperformance and re
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