TIP102 Datasheet. Equivalente

 ..1. Size:44K  st
 tip100 tip102 tip105 tip106 tip107.pdf

TIP100/TIP102 TIP105/TIP106/TIP107 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT 3 2 DESCRIPTION 1 The TIP100 and TIP102 are silicon epitaxial-base NPN power transistors in monolithic Darlington TO-220

 ..2. Size:51K  fairchild semi
 tip102.pdf

TIP100/101/102 Monolithic Construction With Built In Base- Emitter Shunt Resistors High DC Current Gain hFE=1000 @ VCE=4V, IC=3A (Min.) Collector-Emitter Sustaining Voltage Low Collector-Emitter Saturation Voltage Industrial Use TO-220 1 Complementary to TIP105/106/107 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Darlington Transistor Absolute Maximum

 ..3. Size:243K  mcc
 tip100 tip101 tip102 to-220.pdf

MCC TIP100 TM Micro Commercial Components 20736 Marilla Street Chatsworth Micro Commercial Components TIP101 CA 91311 Phone (818) 701-4933 TIP102 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates RoHS Compliant. See ordering information) High DC Current Gain hFE=2500 (Typ) @ IC=4.0Adc NPN Plastic Low Collector-Emitter S

 ..4. Size:213K  inchange semiconductor
 tip102.pdf

isc Silicon NPN Darlington Power Transistor TIP102 DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = 3A FE C Collector-Emitter Sustaining Voltage- V = 100V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = 2.0V(Max)@ I = 3A CE(sat) C = 2.5V(Max)@ I = 8A C Complement to Type TIP107 Minimum Lot-to-Lot variations for robust device performance and reliabl

 9.1. Size:218K  motorola
 tip100re.pdf

 9.2. Size:50K  fairchild semi
 tip106.pdf

TIP105/106/107 Monolithic Construction With Built In Base- Emitter Shunt Resistors High DC Current Gain hFE=1000 @ VCE= -4V, IC= -3A (Min.) Collector-Emitter Sustaining Voltage Low Collector-Emitter Saturation Voltage Industrial Use TO-220 1 Complementary to TIP100/101/102 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Darlington Transistor Absolute Maximu

 9.3. Size:59K  samsung
 tip100.pdf

NPN EPITAXIAL TIP100/101/102 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN TO-220 MIN h =1000 @ V =4V, I =3A FE CE C COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE Complementary to TIP105/106/107 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collecto

 9.4. Size:314K  cdil
 tip100-107.pdf

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PLASTIC POWER TRANSISTORS TIP100 TIP105 TIP101 TIP106 TIP102 TIP107 NPN PNP TO-220 Plastic Package Intended for use in Linear Switching Applications ABSOLUTE MAXIMUM RATINGS (Ta=25 C) DESCRIPTION TIP100/105 TIP101/106 TIP102/107 UNIT VCEO Collector Emitter Voltage 60 80 100 V Collector Base

 9.5. Size:212K  inchange semiconductor
 tip100.pdf

isc Silicon NPN Darlington Power Transistor TIP100 DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = 3A FE C Collector-Emitter Sustaining Voltage- V = 60V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = 2.0V(Max)@ I = 3A CE(sat) C = 2.5V(Max)@ I = 8A C Complement to Type TIP105 Minimum Lot-to-Lot variations for robust device performance and reliable

 9.6. Size:212K  inchange semiconductor
 tip106.pdf

isc Silicon PNP Darlington Power Transistor TIP106 DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = -3A FE C Collector-Emitter Sustaining Voltage- V = -80V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = -2.0V(Max)@ I = -3A CE(sat) C = -2.5V(Max)@ I = -8A C Complement to Type TIP101 Minimum Lot-to-Lot variations for robust device performance and re

 9.7. Size:136K  inchange semiconductor
 tip101.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor TIP101 DESCRIPTION High DC Current Gain- hFE = 1000(Min)@ IC= 3A Collector-Emitter Sustaining Voltage- VCEO(SUS) = 80V(Min) Low Collector-Emitter Saturation Voltage- VCE(sat) = 2.0V(Max)@ IC= 3A = 2.5V(Max)@ IC= 8A Complement to Type TIP106 APPLICATIONS Designed

 9.8. Size:212K  inchange semiconductor
 tip107.pdf

isc Silicon PNP Darlington Power Transistor TIP107 DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = -3A FE C Collector-Emitter Sustaining Voltage- V = -100V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = -2.0V(Max)@ I = -3A CE(sat) C = -2.5V(Max)@ I = -8A C Complement to Type TIP102 Minimum Lot-to-Lot variations for robust device performance and r

 9.9. Size:212K  inchange semiconductor
 tip105.pdf

isc Silicon PNP Darlington Power Transistor TIP105 DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = -3A FE C Collector-Emitter Sustaining Voltage- V = -60V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = -2.0V(Max)@ I = -3A CE(sat) C = -2.5V(Max)@ I = -8A C Complement to Type TIP100 Minimum Lot-to-Lot variations for robust device performance and re